PAM-XIAMEN offers Indium Semiconductor Wafer: GaSb,GaAs, GaP
GaSb Wafer Substrate – Gallium Antimonide
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Quantity
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Material
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Orientation.
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Diameter
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Thickness
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Polish
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Resistivity
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Type Dopant
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Nc
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Mobility
|
EPD
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PCS
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(mm)
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(μm)
|
Ω·cm
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a/cm3
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cm2/Vs
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/cm2
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1-100
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GaSb
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(100)±0.5
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50.8
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500±25
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SSP
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N/A
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Te
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1E17 – 5E18
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N/A
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< 1000
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1-100
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GaSb
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(111)A±0.5
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50.8
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500±25
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SSP
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N/A
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Te
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1E17 – 5E18
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N/A
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< 1000
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1-100
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GaSb
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(111)B
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50.8
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N/A
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N/A
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N/A
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Te
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(5-8)E17
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N/A
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N/A
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1-100
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GaSb
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(111)B
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50.8
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N/A
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N/A
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N/A
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Undoped
|
none
|
N/A
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N/A
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1-100
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GaSb
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(100)±0.5
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50.8
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500
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SSP
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N/A
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P/
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(1-5)E17cm-3
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N/A
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N/A
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1-100
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GaSb
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(100)±0.5
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50.8
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500
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SSP
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N/A
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N/
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(1-5)E17cm-3
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N/A
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N/A
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1-100
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GaSb
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(100)±0.5
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50.8
|
500
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SSP
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N/A
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N/Te
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(1-8)E17/(2-7)E16
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N/A
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< 1000
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1-100
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GaSb
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(100)
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50.8
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450±25
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SSP
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N/A
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N/A
|
(1-1.2)E17
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N/A
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N/A
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1-100
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GaSb
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(100)
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50.8
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350±25
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SSP
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N/A
|
N/A
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N/A
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N/A
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N/A
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1-100
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GaSb
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(100)
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76.8
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500-600
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N/A
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N/A
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Undoped
|
none
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N/A
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N/A
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1-100
|
GaSb
|
(100)
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100
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800±25
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DSP
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N/A
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P/Zn
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N/A
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N/A
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N/A
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1-100
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GaSb
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(100)
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100
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250±25
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N/A
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N/A
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P/ZnO
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N/A
|
N/A
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N/A
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As a GaSb wafer supplier,we offer GaSb semiconductor list for your reference, if you need price detail, please contact our sales team
1)2″,3″GaSb wafer
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:P/undoped;P/Si;P/Zn
Nc(cm-3):(1~2)E17
Mobility(cm2/V ·s):600~700
Growth Method:CZ
Polish:SSP
2)2″GaSb wafer
Orientation:(100)±0.5°
Thickness(μm):500±25;600±25
Type/Dopant:N/undoped;P/Te
Nc(cm-3):(1~5)E17
Mobility(cm2/V ·s):2500~3500
Growth Method:LEC
Polish:SSP
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
GaAs Wafer Substrate – Gallium Arsenide
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Quantity
|
Material
|
Orientation.
|
Diameter
|
Thickness
|
Polish
|
Resistivity
|
Type Dopant
|
Nc
|
Mobility
|
EPD
|
PCS
|
(mm)
|
(μm)
|
Ω·cm
|
a/cm3
|
cm2/Vs
|
/cm2
|
||||
1-100
|
GaAs
|
(100)
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25.4
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4000±50
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DSP
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>1E7
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Undoped
|
N/A
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N/A
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<1E5
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1-100
|
GaAs
|
(100)
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50.7
|
350-370
|
SSP
|
>1E7
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Undoped
|
N/A
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>3500
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<10000
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1-100
|
GaAs
|
(100)2°±0.50 off toward (011)
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50.7
|
350±10
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SSP
|
(0.8-9)E-3
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N/Si
|
(8)E17
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2000-3000
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<5000
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1-100
|
GaAs
|
(100)6°±0.50 off toward (011)
|
50.7
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350±20
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SSP
|
(0.8-9)×10-3
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N/Si
|
(0.2-4)E18
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≥1000
|
≤5000
|
1-100
|
GaAs
|
(100)
|
50.8
|
350
|
SSP
|
N/A
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P/Zn
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(1-5)E19
|
N/A
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<5000
|
1-100
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GaAs
|
(100)
|
50.8
|
5000±50
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SSP
|
>1E8
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Undoped
|
N/A
|
N/A
|
N/A
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1-100
|
GaAs
|
(100)
|
50.8
|
4000±50
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SSP
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>1E7
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Undoped
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N/A
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N/A
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N/A
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1-100
|
GaAs
|
(100)
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50.8
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8000±10
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As cut
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>1E7
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Undoped
|
N/A
|
N/A
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N/A
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1-100
|
GaAs
|
(100)
|
50.8
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8000±10
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DSP
|
>1E7
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Undoped
|
N/A
|
N/A
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N/A
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1-100
|
GaAs
|
(100)2°
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50.8
|
3000
|
SSP
|
>1E7
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N/Si
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N/A
|
N/A
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N/A
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1-100
|
GaAs
|
(100)
|
50.8
|
350±25
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SSP
|
>1E7
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N/A
|
(1-5)E19
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N/A
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N/A
|
1-100
|
GaAs
|
(100)
|
50.8
|
350±25
|
SSP
|
N/A
|
N/A
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(0.4-3.5)E18
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≥1400
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≤100
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1-100
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GaAs
|
(100)0°or 2°
|
76.2
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130±20
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DSP
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N/A
|
Undoped
|
N/A
|
N/A
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<10000
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1-100
|
GaAs
|
(100)2°±0.50
|
76.2
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350±25
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SSP
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N/A
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N/Si
|
(0.4-2.5)E18
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N/A
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≤5000
|
1-100
|
GaAs
|
(100)
|
76.2
|
350±25
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SSP
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N/A
|
N/A
|
N/A
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N/A
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N/A
|
1-100
|
GaAs
|
(100)
|
76.2
|
350±25
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SSP
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>1E7
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Undoped
|
N/A
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N/A
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≤8E4 or 1E4
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1-100
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GaAs
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(100)
|
76.2
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625±25
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DSP
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>1E7
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Undoped
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N/A
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≥4500
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≤8E4 or 1E4
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1-100
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GaAs
|
(100)2°±0.10 off toward(110)
|
76.2
|
500
|
SSP
|
>1E7
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Undoped
|
N/A
|
N/A
|
N/A
|
1-100
|
GaAs
|
(100)2°
|
100
|
625
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DSP
|
>1E7
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Undoped
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N/A
|
N/A
|
N/A
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1-100
|
GaAs
|
(100)2°
|
100
|
625±25
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DSP
|
N/A
|
N/A
|
N/A
|
N/A
|
N/A
|
1-100
|
GaAs
|
(100)2°±0.50 off toward (011)
|
100
|
350±25
|
SSP
|
N/A
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N/Si
|
(0.4-3.5)E18
|
N/A
|
≤5000
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1-100
|
GaAs
|
(100)2°±0.10 off toward (110)
|
100
|
625±25
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DSP
|
(1-4)E18
|
Undoped
|
N/A
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N/A
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N/A
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1-100
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GaAs
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(100)2°±0.50 off toward (011)
|
100
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625±25
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DSP
|
(1.0-4.0)1E8
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Undoped
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N/A
|
N/A
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N/A
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1-100
|
GaAs
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(100)2°±0.50 off toward (011)
|
100
|
625±25
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DSP
|
(1-4)E8
|
Undoped
|
N/A
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N/A
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N/A
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1-100
|
GaAs
|
(100)2°±0.50 off toward (011)
|
100
|
350±25
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SSP
|
N/A
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N/Si
|
(0.4-4)E18
|
N/A
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≤5000
|
1-100
|
GaAs
|
(100)15°±0.50 off toward (011)
|
100
|
350±25
|
SSP
|
N/A
|
N/Si
|
(0.4-4)E18
|
N/A
|
≤5000
|
1-100
|
GaAs
|
(100)2°±0.50
|
100
|
350±25
|
DSP
|
N/A
|
N/Si
|
(0.4-4)E18
|
N/A
|
≤5000
|
1-100
|
GaAs
|
(100)2°±0.50
|
100
|
625±25
|
SSP
|
(1-4)E18
|
Undoped
|
N/A
|
N/A
|
N/A
|
1-100
|
GaAs
|
(100)2°±0.50
|
150
|
675±25
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DSP
|
>1E7
|
Undoped
|
N/A
|
N/A
|
N/A
|
1-100
|
GaAs
|
(100)0°±3.0°
|
150
|
675±25
|
DSP
|
>1.0×107
|
Undoped
|
N/A
|
N/A
|
N/A
|
1-100
|
GaAs
|
(310)
|
50.8/76.2
|
N/A
|
N/A
|
N/A
|
N/A
|
N/A
|
N/A
|
N/A
|
As a GaAs wafer supplier,we offer GaAs semiconductor list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.*** We offer GaAs epitaxy service by MBE and MOCVD, please contact with our sales team.
GaP Wafer Substrate- Gallium Posphide
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Quantity
|
Material
|
Orientation.
|
Diameter
|
Thickness
|
Polish
|
Resistivity
|
Type Dopant
|
Nc
|
Mobility
|
EPD
|
PCS
|
(mm)
|
(μm)
|
Ω·cm
|
a/cm3
|
cm2/Vs
|
/cm2
|
||||
1-100
|
GaP
|
(111)
|
50
|
5000 ± 20
|
SSP
|
N/A
|
N
|
N/A
|
N/A
|
N/A
|
1-100
|
GaP
|
(111)±0.5°
|
50±0.5
|
300 ± 20
|
N/A
|
N/A
|
S
|
(2~7)×1E17
|
≥100
|
<3×1E5
|
1-100
|
GaP
|
(111)±0.5°
|
50±0.5
|
300 ± 20
|
N/A
|
N/A
|
Te
|
(1~2)×1E17
|
≥100
|
<3×1E5
|
As a GaP wafer supplier,we offer GaP semiconductor list for your reference, if you need price detail, please contact our sales team
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
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