PAM XIAMEN offers GaN on Sapphire for RF.
1. GaN HEMT Structure on Sapphire for RF Application
| Wafer size | 2”, 3”, 4”, 6” |
| AlGaN/GaN HEMT structure | Refer 1.2 |
| Carrier density | 6E12~2E13 cm2 |
| Hall mobility | / |
| XRD(102)FWHM | / |
| XRD(002)FWHM | / |
| Sheet Resistivity | / |
| AFM RMS (nm）of 5x5um2 | <0.25nm |
| Bow(um) | <=35um |
| Edge exclusion | <2mm |
| SiN passivation layer | 0~30nm |
| u-GaN cap layer | / |
| Al composition | 20-30% |
| In composition | 17% for InAlN |
| AlGaN barrier layer | 20~30nm |
| AlN spacer | / |
| GaN buffer layer(um） | / |
| GaN channel | / |
| Fe doped GaN buffer | / |
| Nudeation | / |
| Substrate material | Sapphire substrate |
2. GaN HEMT Wafer
PAMP20242-HEMT
| Layer | Thickness |
| SiN cap | – |
| GaN cap | – |
| AlGaN barrier | – |
| AlN interlayer | – |
| GaN channel | – |
| Insulating GaN | 1.6um |
| GaN buffer | – |
| Double side polished sapphire |
3. AlGaN/GaN HEMT Wafer
PAM201117-HEMT
| Layer Material | Thickness |
| AlGaN | – |
| AlN Sapcer | – |
| GaN | 2um |
| LT AlN | – |
| Sapphire | – |
4. FAQ of GaN on Sapphire HEMT Wafer, RF
Q: I believe the 2-inch diameter GaN substrate grown by HVPE on Sapphire substrate and lifted-off. Can I know the substrate dislocation density (TDD) as well as the grown HEMT structure?
A: The dislocation density of GaN on sapphire HEMT wafer: substrate<2E6, epilayer<3E6.
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com.
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
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