PAM-XIAMEN can supply semiconductor wafers, more wafer specifications please refer to https://www.powerwaywafer.com/products.html. If necessary, we will offer PL (photoluminescence) spectroscopy for the semiconductor wafers.
1. What is PL?
About PL, it refers to the self-emission light produced by a material after being excited by light. When [...]
2022-08-09мета-автор
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade.
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20мета-автор
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
2″
250
P/P
0.01-0.02
SEMI Prime, TTV<5μm
p-type Si:B
[100]
2″
300
P/E
0.01-0.02
SEMI,
p-type Si:B
[100]
2″
500
P/P
0.01-0.02
SEMI Prime,
p-type Si:B
[100]
2″
600
P/E
0.01-0.05
SEMI Prime,
p-type Si:B
[100]
2″
525
P/E
0.005-0.020
SEMI Prime, , TTV<5μm
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
300
P/E
0.001-0.005
SEMI Prime,
p-type Si:B
[100]
2″
P/E
SEMI Prime
p-type Si:B
[100]
2″
525
P/P
<0.01 {0.0076-0.0078}
SEMI Prime, , in hard cassettes of 5 wafers.
p-type Si:B
[111] ±0.5°
2″
275
P/E
1-30
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
330
P/E
1-20
SEMI Prime
p-type Si:B
[111] ±0.5°
2″
330
P/E
1-20
SEMI Prime
p-type [...]
2019-03-07мета-автор
Germanium was an early transistor material. Now its charge-carrying abilities and advanced fabrication technology make it an attractive material for future chips. As a proof of concept, our team used germanium-on-insulator wafers to construct inverters containing first planar transistors and then FinFETs
Germanium was first [...]
2019-08-28мета-автор
PAM XIAMEN offers MgO single crystal substrate.
MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]
2019-05-13мета-автор
PAM-XIAMEN offers 1550nm laser diode wafer, which is an epitaxial wafer of a diode laser structure emitting around 1550 nm (on InP substrate), and the wafer dimension for laser diode 1550nm can be 2” or 3”. You can fabricate a laser for your application such [...]
2019-03-13мета-автор
