LITAO3 LITHIUM TANTALATE CRYSTAL

  • Home
  • News
  • LITAO3 LITHIUM TANTALATE CRYSTAL

LITAO3 LITHIUM TANTALATE CRYSTAL

PAM XIAMEN offers LiTaO3 Lithium Tantalate Crystal.

                                            Major capability parameter
Material purity >99.995%
Crystal structure M6
Unit cell constant a=5.154Å   c=13.783 Å
Melt point（℃） 1650
Density 7.45（g/cm3）
Hardness 5.5~6（mohs）
Color Colorless
Index of refraction no=2.176 ne=2.180 （633nm）
Through scope 0.4～5.0mm
Resistance coefficient 1015wm
Dielectric constants es11/eo:39~43 es33/eo:42~43
et11/eo:51~54 et33/eo:43~46
Thermal expansion aa=1.61×10-6/k，ac=4.1×10-6/k
Product
Name Product Direction Size
LTB Crystal great X、Y、Z±1º Ø2″×50mm
Ø3″×50mm
LTW Double            flip  Ra<10Å X, y, z or y, rotating or not take place side 10×10×0.5mm
Ø2″×0.5mm
Ø3″×0.5mm
Ø3″×1.0mm

 

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-03-13

Share this post

Related Posts

Titanium/Gold Schottky Contacts on P-Type GaAs Grown on (111)A and (100) GaAs Substrates Using Molecular Beam Epitaxy

The Schottky barrier heights of Ti/Au contacts on p-type GaAs, grown on (111)A and (100) GaAs substrates by molecular beam epitaxy, have been investigated by I-V and C-V techniques. Higher barrier heights are observed for contacts on (111)A GaAs films. Comparison between our results [...]

2019-10-21meta-author
808nm laser diode wafers

808nm laser diode wafer is offered by PAM-XIAMEN on N-type GaAs substrate. According to the material used in the active area, the LD wafer is mainly divided into two kinds with aluminum and without aluminum. More details please see below: 1. Laser Diode Wafer Specs No. 1 808nm Epi Wafer [...]

2019-03-13meta-author
Silicon Wafers for Soft Lithography

PAM XIAMEN offers Si wafers. Our clients often use the following spec for their soft lithography applications. 100mm P(100) 0-100 ohm-cm SSP 500um Test Grade Not only can the above silicon wafers be used for soft lithography, our clients also use the wafers for PDMS micro-fluidic chip platforms [...]

2019-02-25meta-author
4″ Silicon EPI Wafer-1

PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx400μm n- Si:As[111] 0.001-0.005 P/E 21 n- Si:P 0.15 n/n+ 4″Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 360 – 440 n/n+ 4″Øx400μm p- Si:B[111] 0.01-0.10 P/E 6.5 p- Si:B 3.6±10% P/P/P+ 4″Øx400μm p- Si:B[111] 0.01-0.10 P/E 22±1.5 p- Si:B 300±50 P/P/P+ 4″Øx525μm p- Si:B[111] 0.01-0.02 P/E 8.1±1 p- Si:B 4.5±10% P/P/P+ 4″Øx525μm p- Si:B[111] 0.01-0.02 P/E 6.85±0.75 p- Si:B 0.75±0.15 P/P/P+ 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 10.5 p- Si:B 570±10% p/p+ 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.25±10% P/P+ 4″Øx525μm p- Si:B[111] 0.001-0.005 P/E 20 p- Si:B 175±10% P/P+ 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 21 p- Si:B 150 ±10% P/P+ 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 23 p- Si:B 80±10% P/P+ 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 23 p- Si:B 200±10% P/P+ 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 32 p- Si:B 600 ±10% P/P+ 4″Øx440μm p- Si:B[111] 0.01-0.02 P/E 32.5 p- Si:B 100±10% P/P+ 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 40 p- Si:B 550 ±10% P/P+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 20 p- Si:B 10±1.5 P/N/N+ 4″Øx525μm n- [...]

2019-03-08meta-author
A comparative study of the bonding energy in adhesive wafer bonding

A comparative study of the bonding energy in adhesive wafer bonding Adhesion energies are determined for three different polymers currently used in adhesive wafer bonding of silicon wafers. The adhesion energies of the polymer off-stoichiometry thiol-ene-epoxy OSTE+ and the nano-imprint resist mr-I 9150XP are determined. [...]

2018-07-17meta-author
How to Test the Distribution of Silicon Carbide Crystals by Raman Spectroscopy?

Silicon carbide has a variety of crystal types, but the silicon crystal structure the market needed is mainly 4H-SiC. So the silicon carbide crystal growth in crystal types is a defect. To a certain extent, it can be distinguished by the naked eye. A more accurate measurement method for testing [...]

2021-04-27meta-author