Highlights
•GaSb p–i–n diodes were grown on Si and GaAs using interfacial misfit (IMF) arrays.
•Transmission electron microscopy images revealed arrays of 90° misfit dislocations.
•Threading dislocation densities of around View the MathML source were found in each case.
•Lower dark currents and higher quantum efficiency was found [...]
The commonly used 4H-SiC and 6H-SiC space groups are both P63mc, and the point group is 6mm. 6mm belongs to one of 10 polar point groups (1, 2, 3, 4, 6; m, 3m; mm2, 4mm, 6mm), so 4H-SiC and 6H-SiC are polar crystals. The [...]
2021-04-09мета-автор
Light-emitting InGaN/GaN Heterojunction Bipolar Transistors
The electrical and optical characteristics of high-gain, small-area InGaN/GaN heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor depositionon sapphire substrate are reported. The common-emitter current-voltage characteristics of a 3×10 μm2 emitter device demonstrates a current gain β = ΔIC/ΔIB = [...]
2012-12-06мета-автор
PAM-XIAMEN, one of leading silicon wafer producers, can offer 4 inch N type Sb doped Silicon wafer. As an important substrate for epitaxial growth, heavily doped antimony silicon wafers are widely used in integrated circuit manufacturing.
1. Specification of 4 inch Sb Doped Si wafer [...]
2021-06-25мета-автор
InGaAs Structure Wafer
Indium gallium arsenide (InGaAs), also called gallium indium arsenide, is a common name for a family of chemical compounds of three chemical elements, indium, gallium, and arsenic. Indium and gallium are both boron group elements, often called “group III”, while arsenic is a pnictogen or [...]
PAM-XIAMEN offers PBN-PG composite heater with single side and double side heating patterns.
PG ribbon thickness 0.05mm
Main Heating Zones
Front surface:
Outer element R1=13.4 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Inner element R2= 8.1 Ohm (hot, at 1200-1300 deg.C), cold ~ x2 higher
Auxiliary Heating Zones
Back surface:
Outer element [...]
2019-03-13мета-автор