Silicon Wafer with thermal oxidation or Wet and Dry Thermal Oxide (SiO2) are in Stock,oxidation film(SiO2)can be custom
In Stock, But Not Limited To The Following.
Wafer No.c
Wafer Size
Polished /oxidation sides
Type/Orientation
Wafer Thickness(um)
oxidation thickness
Resistivity(Ohm.cm)
Quantity(pcs)
PAM-XIAMEN-WAFER-#O01
1″
SSP, both oxidation
P100
525±10
300nm
<0.005
290
PAM-XIAMEN-WAFER-#O02
2″
SSP, both oxidation
P100
500±20
3um
1-10
24
PAM-XIAMEN-WAFER-#O03
2″
DSP, both oxidation
N100
285±15
1um
1-10
50
PAM-XIAMEN-WAFER-#O04
2″
SSP, both oxidation
P100
430±10
300nm
<0.005
5
PAM-XIAMEN-WAFER-#O05
3″
SSP, both oxidation
100
400±10
2um
>10000
20
PAM-XIAMEN-WAFER-#O06
4″
SSP, both oxidation
100
400±10
2um
>10000
25
PAM-XIAMEN-WAFER-#O07
4″
SSP, both [...]
2019-11-27мета-автор
We are one of the world’s leading glass wafer suppliers, provide thin & ultra-thin glass wafers and substrates which are made of different materials, such as Borofloat, Fused Silica & Quartz, BK7, Soda Lime etc for MEMS, fiber optic AWG, LCD panels and OLED [...]
2018-07-11мета-автор
2019/2
Stoichiometric LPCVD Nitride on Silicon Wafers
Low Stress Nitride Silicon Wafers
Super Low Stress Nitron on Silicon Wafers
PECVD Nitride
Targeted Stress LPCVD Nitride
Silicon Nitride Waveguide – Substrates and Services Provided
Custom Silicon Wafers
Silicon Epi Wafers Sale
P-type silicon substrates
N-Type Silicon Substrates
Undoped Silicon Wafers
Float Zone Silicon Wafers
Ultra-Thinned Silicon Wafers
Solar [...]
2019-02-15мета-автор
Сапфировые пластины 2 ДЮЙМОВОГО АЛЮМИНИЙ НИТРИД ALN ОБРАЗЕЦ на сапфир БАРИЙ ФТОРИД BaF2 КРИСТЛ BaTiO3 БТО титанат бария КРИСТЛ СУБСТРАТЫ BGO ВИСМУТ германате Bi4Ge3O12 сцинтилляционного кристалл КРИСТАЛЛЫ графеновы CVD пленки и графеновы ОКСИД ЕС ЛЕГИРОВАННОГО КАЛЬЦИЙ ФТОРИД ЕС: CAF2 КРИСТЛ НЕЛИНЕЙНЫЙ КРИСТЛ CA4YO (BO3) 3 YCOB церий ФТОРИД CeF3 CRYSTAL CSI ЦЕЗИЯ ЙОДИД сцинтилляционного кристалла [...]
2019-03-12мета-автор
Silicon Carbide List
4″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-100-N-SIC-350-A
4″ 4H-N
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-100-N-SIC-350-B
4″ 4H-N
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-100-N-SIC-350-D
4″ 4H-N
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
S4H-100-N-SIC-370-L
4″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-100-N-SIC-440-AC
4″ 4H-N
0°/4°±0.5°
440±25um
D
*
As-cut
>75%
S4H-100-N-SIC-C0510-AC-D
4″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-100-N-SIC-C1015-AC-C
4″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
3″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-76-N-SIC-350-A
3″ 4H-N
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-76-N-SIC-350-B
3″ 4H-N
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-76-N-SIC-350-D
3″ 4H-N
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
S4H-76-N-SIC-370-L
3″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-76-N-SIC-410-AC
3″ 4H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S4H-76-N-SIC-C0510-AC-D
3″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-76-N-SIC-C1015-AC-D
3″ 4H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S4H-76-N-SIC-C0510-AC-C
3″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S4H-76-N-SIC-C1015-AC-C
3″ 4H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
SEMI-INSULATING
S4H-76-SI-SIC-350-A
3″ 4H-SI
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-76-SI-SIC-350-B
3″ 4H-SI
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-76-SI-SIC-350-D
3″ 4H-SI
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
2″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-51-N-SIC-330-A
2″ 4H-N
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S4H-51-N-SIC-330-B
2″ 4H-N
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S4H-51-N-SIC-330-D
2″ 4H-N
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S4H-51-N-SIC-370-L
2″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-51-N-SIC-410-AC
2″ 4H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S4H-51-N-SIC-C0510-AC-D
2″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-51-N-SIC-C1015-AC-D
2″ 4H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S4H-51-N-SIC-C0510-AC-C
2″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S4H-51-N-SIC-C1015-AC-C
2″ 4H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
2″ 6H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S6H-51-N-SIC-330-A
2″ 6H-N
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S6H-51-N-SIC-330-B
2″ 6H-N
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S6H-51-N-SIC-330-D
2″ 6H-N
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S6H-51-N-SIC-370-L
2″ 6H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S6H-51-N-SIC-410-AC
2″ 6H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S6H-51-N-SIC-C0510-AC-D
2″ 6H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S6H-51-N-SIC-C1015-AC-D
2″ 6H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S6H-51-N-SIC-C0510-AC-C
2″ 6H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S6H-51-N-SIC-C1015-AC-C
2″ 6H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
SEMI-INSULATING
S6H-51-SI-SIC-330-A
2″ 6H-SI
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S6H-51-SI-SIC-330-B
2″ 6H-SI
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S6H-51-SI-SIC-330-D
2″ 6H-SI
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S6H-51-SI-SIC-370-L
2″ 6H-SI
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S6H-51-SI-SIC-410-AC
2″ 6H-SI
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S6H-51-SI-SIC-C0510-AC-D
2″ 6H-SI
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S6H-51-SI-SIC-C1015-AC-D
2″ 6H-SI
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
Please see below sub-catalogue:
6H n type SiC
4H N Type SiC
4H Semi-insulating SiC
SiC Ingots
Lapped Wafers
Polishing Wafer
As a SiC wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team.
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
Lithium Niobate(LN) Thin Film on Insulator
Single crystal Lithium Niobate(LN) films can be integrated on lithium niobate substrate. The structure can be used in electro-optic modulators, optical waveguides, resonators, SAW devices, FRAM memory devices, etc.
Single crystal lithium niobate thin films are of great significance for the development of [...]
2018-08-22мета-автор