Стехиометрический нитрид LPCVD на кремниевых пластинах

Стехиометрический нитрид LPCVD на кремниевых пластинах

PAM XIAMEN предлагает кремниевые пластины с нитридным покрытием.

Stoichiometric LPCVD Nitride on Silicon Wafer Specification

Диапазон толщины: 100Å - 4500Å
Обрабатываемые стороны: обе
Показатель преломления: 2,00 +/-. 05 @ 632 нм
Напряжение пленки: растягивающее напряжение> 800 МПа
Размер пластины: 1 ″ -12 ″ дюймов
Температура: 800С °
Газы: дихлорсилан, аммиак
Оборудование: горизонтальная вакуумная печь.

Нитрид
LPCVD
PECVD
Стохиометрический
Низкое напряжение
Сверхнизкое напряжение

More specifications of silicon nitride wafer by LPCVD please refer to https://www.powerwaywafer.com/silicon-nitride-wafer-si3n4-thin-film-by-lpcvd.html.

1. About LPCVD

Low-pressure chemical vapor deposition (Low-pressure CVD, LPCVD) is designed to reduce the operating pressure of the reaction gas in the reactor for deposition reaction to below about 133Pa. The LPCVD pressure drops below about 133Pa. Correspondingly, the free path of molecules and the gas diffusion coefficient increase, so that the mass transfer rate of gaseous reactants and by-products is accelerated, and the reaction rate of film formation is increased. When the chip spacing is reduced to 5~10mm, the mass transfer limitation can still be ignored compared with the chemical reaction rate of the chip surface, which creates conditions for vertical densely packed chips, and greatly increases the amount of chips loaded in each batch. The figure below is a schematic diagram of the LPCVD system:

LPCVD Reaction Structure

LPCVD Reaction Structure

LPCVD is the mainstream process for film deposition above 90nm. Films deposited by LPCVD will have better step coverage, good composition and structure control, high deposition rate and output. Furthermore, LPCVD does not require carrier gas, thus greatly reducing the source of particle pollution, and is widely used in the high value-added semiconductor industry for thin film deposition. LPCVD is widely used in silicon dioxide (LTO TEOS), silicon nitride (low stress) (Si3N4), polysilicon (LP-POLY), phosphosilicate glass (BSG), borophosphosilicate glass (BPSG), doped polysilicon, graphite alkenes, carbon nanotubes and other thin films.

2. FAQ about Stoichiometric LPCVD Nitride on Silicon Wafers

Q: «Наша лаборатория планирует изготовить волновод из нитрида кремния. поэтому нам нужно купить пластины нитрида кремния, а это значит, что нам нужны стехиометрические пленки нитрида кремния толщиной около 150 нм на пластинах из термически оксидов кремния. слой термического оксида должен иметь толщину не менее 1 мкм. Силиконовая подложка является гибкой. Нижняя пластина - это для нас хорошая термооксидная пластина. Есть ли у вас услуги обработки для выращивания 150 нм нитрида кремния с низким давлением LPCVD на подложке ниже? Спасибо.
Диаметр 100мм
Высший сорт, ССП
P-тип, легирующая примесь B
Ориентация <110>
Удельное сопротивление 1-10 Ом · см
Толщина 500 мкм
С влажным термическим оксидом 1000 нм »

A: 100mm P/B <100> 1-10 ohm-cm 500um SSP Prim Grade with 1um of Oxide and 150 nm LPCVD low stress silicon

For more information, please contact us email at victorchan@powerwaywafer.com и powerwaymaterial@gmail.com.

2019-02-11

Поделиться этой записью

Связанный Сообщений

Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade )-2

PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ). PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation. 10×10 mm substrates [...]

2019-05-15мета-автор
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]

2014-04-02мета-автор
2″CZ Prime Silicon Wafer

PAM XIAMEN offers 2″CZ Prime Silicon Wafer tem1, 100pcs Silicon wafer: i. Diameter: 50.8 mm ± 0.5 mm, ii. Thickness: 275 μm ±25μm, iii. Doping: P type iv. Orientation: (100) ± 0.5° v. TTV: ≤ 5 μm vi. Bow and Warp: ≤ 20 μm Growth: [...]

2020-03-25мета-автор
150mm&200mm Silicon Wafer

PAM XIAMEN offers 150mm&200mm Silicon Wafer. Diameter Type Dopant Growth method Orientation Resistivity  Thickness Surface Grade 150 N Phos CZ -100 1-20 180-200 P/P PRIME 150 N Phos CZ -100 1-100 500-550 P/P PRIME 150 N Phos CZ -100 1-100 500-600 P/E TEST 150 N Phos CZ -100 1-100 650-700 P/E/DTOx PRIME 150 N Phos CZ -100 1-100 650-700 P/E/Ni PRIME 150 N Phos CZ -100 1-20 650-700 P/E/OX PRIME 150 N Phos CZ -100 1-20 650-700 P/E/WTOx 150 P Boron CZ -100 1-20 180-200 P/P PRIME 150 P Boron CZ -100 1-100 500-550 P/P PRIME 150 P Boron CZ -100 1-100 500-600 P/E TEST 150 P Boron CZ -100 .001-.005 650-700 P/E PRIME 150 P Boron CZ -100 1-100 650-700 P/E/DTOx PRIME 150 P Boron CZ -100 1-100 650-700 P/E/Ni PRIME 150 P Boron CZ -100 1-20 650-700 P/E/OX PRIME 150 P Boron CZ -100 1-20 650-700 P/E/WTOx 150 P Boron CZ -100 1-20 950-1050 P/E PRIME 150 P Boron CZ -100 1-20 950-1050 P/P PRIME 150 Undoped VGF -100 >1E7 500-600 P/P 150 Undoped VGF -100 >1E7 500-600 P/P 150 N Si VGF -100 650-700 P/E PRIME 150 P Zn VGF -100 650-700 P/E PRIME 150 Si Undoped VGF -100 >1E7 500-600 P/P TEST 150 Si Undoped VGF -100 >1E7 500-600 P/P TEST 150 Si Undoped VGF -100 >1E7 610-660 P/P EPI 150 Si Undoped VGF -100 >1E7 650-700 P/E PRIME 150 Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room 150 Round Single Wafer Shipper ePak Lid/Base/Spring Holds1Wafer Clean Room 150 Shipping Cassette ePak Holds25Wafers Clean Room 200 N Phos CZ -100 1-20 700-750 P/E/OX PRIME 200 P Boron CZ -100 1-100 600-800 P/E TEST 200 P Boron CZ -100 1-20 700-750 P/E/OX PRIME For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in [...]

2019-03-04мета-автор
SiC Ingots

PAM-XIAMEN offers n type SiC ingots with 4H or 6H polytype in on axis or 4deg.off axis in different quality grades for researcher and industry manufacturers, size from 2” to 4”, thickness from5-10mm to >15mm.    1. Specifications of SiC Ingots 4″ 4H Silicon Carbide Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area             N-Type  S4H-100-N-SIC-C0510-AC-D 4″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut * S4H-100-N-SIC-C1015-AC-C 4″ [...]

2018-08-07мета-автор
X-ray diffraction analysis of LT-GaAs multilayer structures

X-ray diffraction analysis of LT-GaAs multilayer structures Multilayer structures of low-temperature-grown GaAs(LT-GaAs) into which ultra-thin layers containing excess As are periodically introduced are grown by molecular beam epitaxy. The concentration of excess As in the ultra-thin layers is determined by the analysis of the intensity [...]

2013-11-25мета-автор ,