LT-GaAs

We offer LT-GaAs wafer for THz, detector, ultra-fast-optical experiments and other applications. 1. 2″ LT-GaAs Wafer Specification: Item Specifications Diamater(mm) Ф 50.8mm ± 1mm Thickness 1-2um or 2-3um Marco Defect Density ≤ 5 cm-2 Resistivity(300K) >108 Ohm-cm Carrier ＜1ps Dislocation Density <1×106cm-2 Useable Surface Area ≥80% Polishing Single side polished Substrate GaAs substrate Remark: Other conditions: 1) GaAs substrate should be undoped/semi-insulating with (100)orientation. 2) Growth temperature: ~ 200-250 C 2. LT-GaAs Introduction: Low-temperature grown GaAs is the...

2023-05-10LT-GaAsЧитать далее...

Dependence of arsenic antisite defect concentration and two dimensional growth mode on LT GaAs growth conditions

Dependence of arsenic antisite defect concentration and two dimensional growth mode on LT GaAs growth conditions We investigated the dependence of Arsenic antisite defect concentration and that of epitaxial thickness (tepi), above which a transition to three dimensional growth appears, on the growth conditions of LTGaAs layers grown by MBE. The...

2020-02-17LT-GaAsЧитать далее...

A new concept for highly efficient THz photomixers based on quasi ballistic transport and thin LT-GaAs recombination layers

Явление фотопроводящего переключателя LT-GaAs, запускаемого фемтосекундным лазером с длиной волны 800 нм. Оксид Ti используется в качестве изолятора между электродами для замены воздушного зазора фотопроводящего полупроводникового переключателя (PCSS). Ширина оксида менее 100 нм, материалы электродов и подложки — Ti и LT-GaAs соответственно. Результат моделирования...

2019-03-24LT-GaAsЧитать далее...

Характеристика времени жизни носителей LT GaAs в многослойных эпитаксиальных пластинах GaAs методом переходного отражения

Характеристика времени жизни носителей LT GaAs в многослойных эпитаксиальных пластинах GaAs с помощью метода переходного отражения. Представлена методология определения времени жизни носителей буферных слоев LT GaAs в многослойных пластинах GaAs с использованием фемтосекундного метода переходного отражения. Представлены экспериментальные результаты и компьютерное моделирование в зависимости от температуры роста LT GaAs для...

2019-03-14LT-GaAsЧитать далее...

Расширенные дефекты и выделения в LT-GaAs, LT-InAlAs и LT-InP

Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP We review the main structural characteristics of low temperature molecular beam epitaxially produced GaAs (LT-GaAs), LT-InAlAs, and LT-InP. These materials exhibit almost identical behaviours with respect to growth and annealing conditions. For too low growth temperatures or too high As pressures, defects...

2018-01-02LT-GaAsЧитать далее...

Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was obtained. It is the shortest envelope...

2017-11-19LT-GaAs, Nd:YVO4, QMLЧитать далее...

enhanced continuous-wave terahertz emission by nano-electrodes in a photoconductive photomixer

Enhanced Continuous-wave Trahertz emission by nano-electrodes in a photoconductive photomixer Semiconductor materials used as PCA-based photomixers must exhibit high resistivity, high carrier mobility and ultrashort carrier lifetime. Low-temperature-grown GaAs (LT GaAs) has been shown to have such characteristics 14–18 . The samples used in our experiment had a 1-mm-thick LT GaAs layer grown...

2017-07-13lt gaas wafer, LT-GaAs, lt-gaas photoconductive switchЧитать далее...

THz Generation Process in LT-GaAs

THz Generation Process in LT-GaAs Optical down-conversion is the most successful commercial technique for THz generation using Low temperature grown GaAs (LT-GaAs). The technique is often known as Terahertz Time-Domain Spectroscopy (THz-TDS). This technique works by optical pulse excitation of a photoconductive switch. Here, a femtosecond laser pulse illuminates a gap...

2017-06-18LT-GaAs, ТГцЧитать далее...

Photoemission study of LT-GaAs

Photoemission study of LT-GaAs The electronic structure of GaAs (1 0 0) grown by low-temperature molecular beam epitaxy was investigated by means of photoemission spectroscopy. Slight differences are found in the valence band spectra of GaAs layers grown at different As2/Ga flux ratios. Analysis of As 3d core level spectra does not indicate...

2017-02-11LT-GaAsЧитать далее...