Static induction transistor (SIT) is a type of junction field-effect transistor. It is a unipolar voltage control device developed on the basis of ordinary junction field-effect transistors, with three electrodes: active, gate, and drain. Its source drain current is controlled by an external vertical electric [...]
2024-01-15meta-author
PAM XIAMEN offers Thermal Oxide Wafers, 2 – 4″ Research Grade. Thermal oxide or silicon dioxide layer is formed on bare silicon surface at temperature range from 900°C ~ 1200°C . Compared to CVD deposited oxide layer, thermal oxide has a higher uniformity, and [...]
2019-05-20meta-author
PAM XIAMEN offers LaAlO3 Single Crystal Substrat Lanthanum aluminate (LaAlO3) single crystal substrate is the large-scale high-temperature superconducting film,which has good match with YBaCuO and other high temperature superconductor materials and lattice, low dielectric constant and small microwave loss, so LaAlO3 substrate is suitable for [...]
2019-05-07meta-author
PAM XIAMEN offers 6″ Prime Silicon Wafer Thickness 500±25um. 6″ Si wafer DSP N-type <111> thickness 500±25um resistivity40-100Ωcm For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is [...]
2019-07-01meta-author
PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
2019-05-15meta-author
PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns. 2 inch in diameter wafers Monocrystalline silicon with insulating oxide Polishing: one-sided for microelectronics Thickness: 675 +/- 20 microns TTV <15 microns, Warping <35 microns For more information, please visit our website: [...]
2019-07-01meta-author