Will cell phone windows come to the rescue?
Will cell phone windows come to the rescue?
PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 75 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 136 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 20 n- Si:P 300±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 21 n- Si:P 400±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 22.5 n- Si:P 12.5±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.08 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.005-0.020 P/E 25 n- Si:P 0.04 ±10% N/N+ 4″Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 37.5 n- Si:P 270 ±10% N/N+ 4″Øx400μm n- Si:Sb[111] 0.006-0.020 P/E 37.5 n- Si:P 85±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 58 n- Si:P 60±10% N/N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 15 n- Si:P 8±10% N/N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 5 n- Si:P 3±10% N/N/N/N+ 4″Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 60 n- Si:P 40.5±4.5 N/N/N+ 4″Øx460μm n- Si:Sb[111] 0.007-0.020 P/E 20 n- Si:P 10±2 N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- Si:P 58.75 ±10% N/N+ 4″Øx525μm n- Si:Sb[111] 0.005-0.020 P/E 60 n- [...]
When talking about the topic that step growth reduces silicon carbide defects, it is necessary to discuss the process for the growth of silicon carbide single crystals. Gas-solid phase transitions are involved in the growth process of silicon carbide single crystals by PVT or HTCVD method. Therefore, there [...]
Single crystal germanium (Ge) material is an important hard and brittle infrared optical material, belonging to indirect transition semiconductor with high hole mobility and electron mobility. It is widely used in aerospace, high-frequency ultra-high frequency electronics, optical fiber communication, infrared optics, solar cells and [...]
Silicon-based devices are approaching physical limits, and compound semiconductors have broad prospects. Meanwhile, in some high-power, high-voltage, high-frequency, and high-temperature applications (such as new energy and 5G communications), the performance of silicon-based devices has gradually failed to meet the requirements. Due to the excellent [...]
When the In composition in the InGaAs material reaches 0.53, and Ga reaches 0.47, InGaAs / InP lattice matched makes it can form a heterojunction. The InGaAs / InP heterojunction structure utilizes the steps of the conduction band and valence band formed by the [...]
PAM XIAMEN offers 4″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment Intrinsic Si:- [100] 4″ 500 P/E FZ 13,000-20,000 SEMI Prime, TTV<5μm, Front-side Prime polish, Back-side light polish Intrinsic Si:- [100] 4″ 615 ±10 C/C FZ >10,000 SEMI Prime Intrinsic Si:- [100] 4″ 800 C/C FZ >10,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 4″ 525 P/E FZ >22,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 4″ 300 P/E FZ 20,000-40,000 SEMI, TTV<5μm Intrinsic Si:- [111] ±0.5° 4″ 450 P/P FZ >20,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 4″ 500 P/E FZ >20,000 SEMI Prime, Extra 3 free non-prime wafers included with 4 prime wafers Intrinsic Si:- [111] ±1.0° 4″ 500 P/P FZ >15,000 SEMI Prime, TTV<5μm p-type Si:B [110] ±0.25° 4″ 525 P/E 5-10 SEMI [...]