We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA),University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
Tailoring the structural and optical characteristics of InGaN/GaN multilayer thin films by 12 MeV Si ions [...]
2019-12-02meta-author
PAM XIAMEN offers 6″ FZ Silicon Wafer with Diameter 150mm, Both Side Etched
Silicon wafers, per SEMI Prime, E/E
6″ (150.0±0.2mm)Ø×400±25µm,
FZ n-type Si:P[100]±0.5°,
Ro=(1-5)Ohmcm,
Carbon<2E16 /cm³, Oxygen<2E16 /cm³,
TTV<12µm, Bow<40µm, Warp<50µm,
Bothsidesetched, One SEMI Flat (57.5mm),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1000µs.
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-06-10meta-author
Unintentionally doped GaN were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The high-resolution X-ray diffraction (HRXRD) and Lehighton contactless sheet resistance measuring systems were employed to characterize the quality and sheet resistance (Rs) of GaN epilayer. The threading dislocation density [...]
PAM XIAMEN offers YAlO3 Single crystal.
YAlO3 is excellent substrate for HTS film and II-V nitride , as well as many oxide films due to its chemcial stability and lattice matching.
Structure Lattice (A) Melting Point Density g/cc Dielectric Constant Thermo-Expans x10-6/K Max. Xtl [...]
2019-05-21meta-author
PAM XIAMEN offers 4″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
4″
525
P/P
1-100
SEMI Prime, TTV<5μm
n-type Si:P
[100]
4″
525
P/E
0.3-0.5
SEMI
n-type Si:P
[100]
4″
300
P/E
0.29-0.31
SEMI Prime
n-type Si:P
[100]
4″
200
P/P
0.10-0.15
SEMI Test, Not sealed both sides scratched
n-type Si:P
[100]
4″
200
P/P
0.10-0.15
SEMI Test, Both sides with scratches
n-type Si:P
[100]
4″
200
P/E
0.10-0.15
SEMI Prime, Front-side Prime, Back-side Test grade polish
n-type Si:Sb
[100]
4″
525
P/E
0.020-0.022
Prime
n-type Si:Sb
[100-6° towards[110]] ±0.5°
4″
525
P/E
0.015-0.020
SEMI Prime
n-type Si:Sb
[100]
4″
525
P/E
0.011-0.014
Prime
n-type Si:Sb
[100]
4″
305 ±3
P/P
0.010-0.025
SEMI Prime, TTV<1μm
n-type Si:Sb
[100]
4″
525
P/E
0.01-0.02
SEMI Prime, TTV<5μm
n-type Si:Sb
[100]
4″
525
P/E
0.01-0.02
SEMI Prime
n-type Si:As
[100]
4″
525
P/E
0.0025-0.0035
SEMI Prime
n-type [...]
2019-03-05meta-author
Fabrication of ZnO nanorod/p-GaN high-brightness UV LED by microwave-assisted chemical bath deposition with Zn(OH)2–PVA nanocomposites as seed layer
Chemical solution deposition is a low-temperature and possibly the lowest-cost method of growing ZnO nanorods on a GaN substrate. However, most reported methods leave an interface layer [...]
2013-08-01meta-author