SAPPHIRE WAFERS

PAM XIAMEN offers high-quality sapphire wafers.

2 IN SAPPHIRE WAFER A-PLANE 11-20 SINGLE CRYSTAL AL2O3

Material: High Purity >99.996%, single crystal Al2O3
Dimension: Φ50.8 mm ± 0.1 mm
Thickness: 0.50 mm standard
Lattice Parameter: a=4.785 A, c=12.991 A
Density: 3.98 g/cm3
Orientation: A-plane (11-20) 0.2± 0.1 degree off.
Primary Flat Orientation: C-plane
Primary flat length: 16.0 ± 1 mm
Total Thickness Variation: <10 μm
Bow: <10 μm
Warp: <10 μm
Polishing: single side polished Ra < 0.5 nm (AFM), double size polish is available per request.

2 IN SAPPHIRE WAFER M-PLANE 10-10 SINGLE CRYSTAL AL2O3

Material: High Purity >99.996%, single crystal Al2O3
Dimension: Φ50.8 mm ± 0.1 mm
Thickness: 0.43 mm standard
Lattice Parameter: a=4.785 A, c=12.991 A
Density: 3.98 g/cm3
Orientation: M-plane (10-10) 0.2± 0.1 degree off.
Primary flat orientation: C-plane[11-20] +/- 0.2°
Primary flat length: 16.0 ± 1 mm
Total Thickness Variation: <10 μm
Bow: <10 μm
Warp: <10 μm
Polishing: single side polished Ra < 0.5 nm (AFM), double size polish is available per request.

2 IN SAPPHIRE WAFER R-PLANE 1-102 SINGLE CRYSTAL AL2O3

Material: High Purity >99.996%, single crystal Al2O3
Dimension: Φ50.8 mm ± 0.1 mm
Thickness: 0.43 mm standard
Lattice Parameter: a=4.785 A, c=12.991 A
Density: 3.98 g/cm3
Orientation: R-plane (1-102) 0.2± 0.1 degree off.
Primary Flat orientation: Projected C-Axis 45 +/- 2 degree
Primary flat length: 16.0 ± 1 mm
Total Thickness Variation: <10 μm
Bow: <10 μm
Warp: <10 μm
Polishing: single side polished Ra < 0.5 nm (AFM), double size polish is available per request.

2 INCH SAPPHIRE WAFER C-PLANE SINGLE OR DOUBLE SIDE POLISH AL2O3 SINGLE CRYSTAL

Material: High Purity >99.99%, single crystal Al2O3
Dimension: Φ50.8 mm ± 0.1 mm
Thickness: 430 um ± 25 um for SSP and 400 um ± 25 um for DSP (other thickness available upon request)
Lattice Parameter: a=4.785 A, c=12.991 A
Density: 3.98 g/cm3
Orientation: C plane (0001) to M (1-100) 0.2 ± 0.1 degree off.
Primary Flat Orientation: A-plane [11-20] +/- 0.2°
Primary Flat Length: 16.0 ± 1.0 mm
Total Thickness Variation (TTV): <5 μm
Bow: <10 μm
Warp: <10 μm
Polishing: single side polished (SSP) front side epi-ready surface Ra < 0.3 nm (AFM), back side fine-ground Ra = 0.8 ~ 1.2 um, or double side polished (DSP) both front and back sides epi-ready surface Ra < 0.3 nm (AFM)

3 INCH SAPPHIRE WAFER C-PLANE SINGLE OR DOUBLE SIDE POLISH AL2O3 SINGLE CRYSTAL

Material: High Purity >99.99% single crystal Al2O3
Diameter: Φ76.2 mm ± 0.1 mm
Thickness: 650 um ± 25 um (SSP) , 600 or 430 um ± 25 um (DSP)
Lattice Parameter: a=4.785 A, c=12.991 A
Density: 3.98 g/cm3
Orientation: C plane (0001) ± 0.3 degree, R-plane (1-102), A-plane (11-20), M-plane (10-10) are available.
Primary flat orientation: A-plane ± 0.3 degree
Primary flat length: 22.0 mm ± 1 mm
Total Thickness Variation (TTV): <15 μm
Bow: <15 μm
Warp: <15 μm
Polishing: single side polished (SSP) front side epi-ready surface Ra < 0.5 nm (AFM), back side fine-ground Ra = 0.8 ~ 1.2 um, or double side polished (DSP) both front and back sides epi-ready surface Ra < 0.5 nm (AFM)

4 INCH SAPPHIRE WAFER C-PLANE SINGLE OR DOUBLE SIDE POLISH AL2O3 SINGLE CRYSTAL

Material: High Purity, >99.99%, single crystal Al2O3
Dimension: Φ100.0 mm ± 0.1 mm
Thickness: 650 um ± 25 um (SSP) , 600 um ± 25 um (DSP)
Lattice Parameter: a=4.785 A, c=12.991 A
Density: 3.98 g/cm3
Orientation: C plane sapphire (0001) off M plane 0.2± 0.1 degree, R-plane (1-102), A-plane (11-20), M-plane (10-10) are available.
Primary flat orientation: A-plane ± 0.2 degree
Primary flat length: 30.0 ± 1 mm
Total Thickness Variation (TTV): <20 μm
Bow: <20 μm
Warp: <20 μm
Polishing: single side polished (SSP) front side epi-ready surface Ra < 0.5 nm (AFM), back side fine-ground Ra = 0.8 ~ 1.2 um, or double side polished (DSP) both front and back sides epi-ready surface Ra < 0.5 nm (AFM)

6 INCH SAPPHIRE WAFER C-PLANE DOUBLE SIDE POLISH AL2O3 SINGLE CRYSTAL

Material: High purity (>99.99%) single crystal Al2O3, sapphire wafer.
Dimension: Φ150 mm ± 0.25 mm, 6 inch diameter
Thickness: 1300 ± 25 um
Orientation: C plane (0001) off M (1-100) plane 0.2 ± 0.05 degree, (sapphire wafers with A, R and M planes are available upon request)
Primary flat orientation: A plane ± 1 degree
Primary flat length: 47.5 mm ± 1.0 mm
Total Thickness Variation (TTV): <20 μm
Bow: <25 μm
Warp: <25 μm
Polishing: double side polished (DSP) Ra < 0.5 nm (by AFM).
Transmittance: 88% +/-1 % @460 nm

6 INCH SAPPHIRE WAFER C-PLANE SINGLE SIDE POLISH AL2O3 SINGLE CRYSTAL

Material: High purity single crystal Al2O3, sapphire wafer.
Dimension: Φ150 mm ± 0.05 mm, 6 inch
Thickness: 1300 ± 20 um
Orientation: C plane (0001) off M (1-100) plane 0.2 ± 0.05 degree, (sapphire wafers with A, R and M planes are available upon request)
Primary flat orientation: A plane ± 1 degree
Primary flat length: 51 mm ± 1 mm
Total Thickness Variation (TTV): <20 μm
Bow: <25 μm
Warp: <25 μm
Polishing: single side polished (SSP) Ra < 0.5 nm (by AFM). The reverse side was fine ground to Ra = 0.8 – 1.2 um.
Transmittance: 88% +/-1 % @460 nm

C-Plane Sapphire Substrate

R-Plane Sapphire Substrate with SSP

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

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