PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.
1. Specification of Semi-insulating GaAs Substrate PAM190425-GAAS
| Parameter | Customer’sRequirements | Guaranteed/Actual Values | UOM | |
| GrowthMethod: | VGF | VGF | — | |
| ConductType:. | S-I-N | S-I-N | — | |
| Dopant: | Undoped | Undoped | ||
| Diameter: | 100.0±0.2 | 100.0±0.2 | mm | |
| Orientation: | (100)±0.30offtoward (110) | (100)±0.30offtoward (110) | — | |
| OFlocation/length: | EJ|0-1-1|±0.50/32.5±1.0 | EJ[0-1-1]±0.50/32.5±1.0 | — | |
| IFlocation/length: | EJ|0-11|±0.50/18.0±1.0 | EJ[0-11|±0.50/18.0±1.0 | — | |
| Resistivity: | Min:0.6E8 | Min:0.8E8 | Max:2.4E8 | ohm.cm |
| Mobility: | Min:4500 | Min:4769 | Max:6571 | cm2/v.s |
| EPD: | Max:10000 | Min:700 | Max:700 | /cm2 |
| Thickness: | 600±25 | 600±25 | pm | |
| Bow: | Max:4 | Max:4 | μm | |
| Warp: | Max:5 | Max:5 | μm | |
| TTV: | Max:3 | Max:3 | μm | |
| TIR:. | Max:3 | Max:3 | pm | |
| LFPD: | Max:1 | Max:1 | pm | |
| LTV: | Max:1.5 | Max:1.5 | μm | |
| PLTV: | >[email protected]*15mm | >[email protected]*15mm | % | |
| ParticalCount: | <100/wafer(for particle>0.28um); Haze<5ppm |
<I00/wafer(for particle>0.28um); Haze<5ppm |
— | |
| EdgeRounding: | 0.375 | 0.375 | mmR | |
| Laser Marking: | Backside | Backside | — | |
| SurfaceFinish- front: |
Polished | Polished | — | |
| SurfaceFinish -back: |
Polished | Polished | — | |
2. What is the Typical Carrier Concentration for Semi-insulating GaAs Substrate?
The carrier concentration for Semi-insulating GaAs wafer is E6-E7/cm3, typical value 6.71E6/cm3~1.12E7/cm3, please see below detail parmeters:
| Item No. | 4# | 91# | ||||
| Spec. | resistivity | mobility | C.C | resistivity | mobility | C.C |
| 1 | 1.32E+08 | 5457 | 8.68E+06 | 1.70E+08 | 5482 | 6.71E+06 |
| 2 | 1.05E+08 | 5738 | 1.04E+07 | 1.63E+08 | 5193 | 7.38E+06 |
| 3 | 9.86E+07 | 5644 | 1.12E+07 | 1.58E+08 | 5392 | 7.34E+06 |
3. PL Mapping of Semi-insulating Gallium Arsenide Substrate
Semi-insulating GaAs Substrate
Semi-insulating GaAs Substrate
4. Application of Semi-insulatingg GaAs Substrate
Gallium arsenide material is one of the most important materials in the second generation of new compound semiconductors after silicon single crystals. Because of the excellent performance, high electron mobility and high photoelectric conversion efficiency, substrate of gallium arsenide is mainly used to fabricate integrated circuits with MESFET, HEMT and HBT structures, and the demand of semi-insulating GaAs substrate in the fields of radar, microwave and millimeter wave communications, ultra-high-speed computers and optical fiber communications is growing greatly. Especially in the process of 5G commercialization, GaAs wafer will play an irreplaceable role.
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