PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um, which can be used for Microelectronic application.

1. Specification of Semi-insulating GaAs Substrate

1.1 Semi-insulated GaAs Substrate PAM190425-GAAS

Parameter	Customer’sRequirements	Guaranteed/Actual Values		UOM
GrowthMethod:	VGF	VGF		—
ConductType:.	S-I-N	S-I-N		—
Dopant:	Undoped	Undoped
Diameter:	100.0±0.2	100.0±0.2		mm
Orientation:	(100)±0.30offtoward (110)	(100)±0.30offtoward (110)		—
OFlocation/length:	EJ|0-1-1|±0.50/32.5±1.0	EJ[0-1-1]±0.50/32.5±1.0		—
IFlocation/length:	EJ|0-11|±0.50/18.0±1.0	EJ[0-11|±0.50/18.0±1.0		—
Resistivity:	Min:0.6E8	Min:0.8E8	Max:2.4E8	ohm.cm
Mobility:	Min:4500	Min:4769	Max:6571	cm2/v.s
EPD:	Max:10000	Min:700	Max:700	/cm2
Thickness:	600±25	600±25		pm
Bow:	Max:4	Max:4		μm
Warp:	Max:5	Max:5		μm
TTV:	Max:3	Max:3		μm
TIR:.	Max:3	Max:3		pm
LFPD:	Max:1	Max:1		pm
LTV:	Max:1.5	Max:1.5		μm
PLTV:	>[email protected]*15mm	>[email protected]*15mm		%
ParticalCount:	<100/wafer(for particle>0.28um); Haze<5ppm	<I00/wafer(for particle>0.28um); Haze<5ppm		—
EdgeRounding:	0.375	0.375		mmR
Laser Marking:	Backside	Backside		—
SurfaceFinish- front:	Polished	Polished		—
SurfaceFinish -back:	Polished	Polished		—

1.2 VGF Semi-insulating GaAs Substrates PAM211206-GAAS

Parameter	Dimension	Value
Crystal growth method		VGF
Crystal orientation		100
Conduction Type		N-type, semi-insulating
Dopant		None
Resistivity @ 22 degree C	cm	(1.0-4.0)E7
Radial resistivity variation	%	</=30
Mobility min	cm2/Vs	>/=6.5 E3
EPD max( average over wafer)	cm-2	1.0 E5
Carbon concentration	cm-3	(0.3-2.0) E15
Bor concentration	cm-3	</=3.0 E17
Diameter	mm	76,2+/-0,1
Flat System		SEMI-EJ
OF		(0-1-1)
Orientation tolerance OF	degree	+ / – 1.0
Length OF	mm	22.0+/-2.0
IF		(0-11)
Orientation tolerance IF	degree	+ / – 2.0
Length IF	mm	11.0 +/-2.0
Surface Orientation		100
Off orintation and tolerance	degree	0+/-0.25
Edge Rounding		Bevelled SEMI-M9
Thickness	um	625+/-25
Front side		polished, epi-ready (shelf-life 6 months)
Edge exclusion	mm	5
TTV max	um	6
TIR max	um	5
Bow max	um	8
Warp max	um	8
LFPD (15x15mm field size)	um	1.0
Particles ( diam >/=0.3 um)	pcs/wafer	<50

2. What is the Typical Carrier Concentration for Semi-insulating GaAs Substrate?

The carrier concentration for Semi-insulating GaAs wafer is E6-E7/cm3, typical value 6.71E6/cm3~1.12E7/cm3, please see below detail parmeters:

Item No.	4#			91#
Spec.	resistivity	mobility	C.C	resistivity	mobility	C.C
1	1.32E+08	5457	8.68E+06	1.70E+08	5482	6.71E+06
2	1.05E+08	5738	1.04E+07	1.63E+08	5193	7.38E+06
3	9.86E+07	5644	1.12E+07	1.58E+08	5392	7.34E+06

 

3. PL Mapping of Semi-insulating Gallium Arsenide Substrate

 

 

 

 

 

 

4. Application of Semi-insulatingg GaAs Substrate

Gallium arsenide material is one of the most important materials in the second generation of new compound semiconductors after silicon single crystals. Because of the excellent performance, high electron mobility and high photoelectric conversion efficiency, substrate of gallium arsenide is mainly used to fabricate integrated circuits with MESFET, HEMT and HBT structures, and the demand of semi-insulating GaAs substrate in the fields of radar, microwave and millimeter wave communications, ultra-high-speed computers and optical fiber communications is growing greatly. In addition, the wafers can be used for etch studies to determine etch rates of coatings on top of the wafer and how the etchants removing the coatings react with the GaAs wafer. Especially in the process of 5G commercialization, GaAs wafer will play an irreplaceable role.

For more information, please contact us email at [email protected] and [email protected]