Semi-insulating GaAs Substrate

Semi-insulating GaAs Substrate

PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um.

1. Specification of Semi-insulating GaAs Substrate PAM190425-GAAS

Parameter Customer’sRequirements Guaranteed/Actual Values UOM
GrowthMethod: VGF VGF
ConductType:. S-I-N S-I-N
Dopant: Undoped Undoped  
Diameter: 100.0±0.2 100.0±0.2 mm
Orientation: (100)±0.30offtoward (110) (100)±0.30offtoward (110)
OFlocation/length: EJ|0-1-1|±0.50/32.5±1.0 EJ[0-1-1]±0.50/32.5±1.0
IFlocation/length: EJ|0-11|±0.50/18.0±1.0 EJ[0-11|±0.50/18.0±1.0
Resistivity: Min:0.6E8 Min:0.8E8 Max:2.4E8 ohm.cm
Mobility: Min:4500 Min:4769 Max:6571 cm2/v.s
EPD: Max:10000 Min:700 Max:700 /cm2
Thickness: 600±25 600±25 pm
Bow: Max:4 Max:4 μm
Warp: Max:5 Max:5 μm
TTV: Max:3 Max:3 μm
TIR:. Max:3 Max:3 pm
LFPD: Max:1 Max:1 pm
LTV: Max:1.5 Max:1.5 μm
PLTV: >[email protected]*15mm >[email protected]*15mm %
ParticalCount: <100/wafer(for particle>0.28um);
Haze<5ppm
<I00/wafer(for particle>0.28um);
Haze<5ppm
EdgeRounding: 0.375 0.375 mmR
Laser Marking: Backside Backside
SurfaceFinish-
front:
Polished Polished
SurfaceFinish
-back:
Polished Polished

 

2. What is the Typical Carrier Concentration for Semi-insulating GaAs Substrate?

The carrier concentration for Semi-insulating GaAs wafer is E6-E7/cm3, typical value 6.71E6/cm3~1.12E7/cm3, please see below detail parmeters:

Item No. 4# 91#
Spec. resistivity mobility C.C resistivity mobility C.C
1 1.32E+08 5457 8.68E+06 1.70E+08 5482 6.71E+06
2 1.05E+08 5738 1.04E+07 1.63E+08 5193 7.38E+06
3 9.86E+07 5644 1.12E+07 1.58E+08 5392 7.34E+06

 

3. PL Mapping of Semi-insulating Gallium Arsenide Substrate

Semi-insulating GaAs Substrate

Semi-insulating GaAs Substrate

Semi-insulating GaAs Substrate

Semi-insulating GaAs Substrate

 

 

 

 

 

 

4. Application of Semi-insulatingg GaAs Substrate

Gallium arsenide material is one of the most important materials in the second generation of new compound semiconductors after silicon single crystals. Because of the excellent performance, high electron mobility and high photoelectric conversion efficiency, substrate of gallium arsenide is mainly used to fabricate integrated circuits with MESFET, HEMT and HBT structures, and the demand of semi-insulating GaAs substrate in the fields of radar, microwave and millimeter wave communications, ultra-high-speed computers and optical fiber communications is growing greatly. Especially in the process of 5G commercialization, GaAs wafer will play an irreplaceable role.

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For more information, please contact us email at [email protected] and [email protected]

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