Semi-insulating GaAs Substrate PAM190628-GAAS
PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um.
Specification of Semi-insulating GaAs Substrate
| Parameter | Customer’sRequirements | Guaranteed/Actual Values | UOM | |
| GrowthMethod: | VGF | VGF | — | |
| ConductType:. | S-I-N | S-I-N | — | |
| Dopant: | Undoped | Undoped | ||
| Diameter: | 100.0±0.2 | 100.0±0.2 | mm | |
| Orientation: | (100)±0.30offtoward (110) | (100)±0.30offtoward (110) | — | |
| OFlocation/length: | EJ|0-1-1|±0.50/32.5±1.0 | EJ[0-1-1]±0.50/32.5±1.0 | — | |
| IFlocation/length: | EJ|0-11|±0.50/18.0±1.0 | EJ[0-11|±0.50/18.0±1.0 | — | |
| Resistivity: | Min:0.6E8 | Min:0.8E8 | Max:2.4E8 | ohm.cm |
| Mobility: | Min:4500 | Min:4769 | Max:6571 | cm2/v.s |
| EPD: | Max:10000 | Min:700 | Max:700 | /cm2 |
| Thickness: | 600±25 | 600±25 | pm | |
| Bow: | Max:4 | Max:4 | μm | |
| Warp: | Max:5 | Max:5 | μm | |
| TTV: | Max:3 | Max:3 | μm | |
| TIR:. | Max:3 | Max:3 | pm | |
| LFPD: | Max:1 | Max:1 | pm | |
| LTV: | Max:1.5 | Max:1.5 | μm | |
| PLTV: | >90@15mm*15mm | >90@15mm*15mm | % | |
| ParticalCount: | <100/wafer(for particle>0.28um); Haze<5ppm |
<I00/wafer(for particle>0.28um); Haze<5ppm |
— | |
| EdgeRounding: | 0.375 | 0.375 | mmR | |
| Laser Marking: | Backside | Backside | — | |
| SurfaceFinish- front: |
Polished | Polished | — | |
| SurfaceFinish -back: |
Polished | Polished | — | |
PL Mapping of Semi-insulating GaAs Substrate
Semi-insulating GaAs Substrate
Semi-insulating GaAs Substrate
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com