Semi-insulating GaAs Substrate

Semi-insulating GaAs Substrate PAM190628-GAAS

PAM-XIAMEN offers 4inch Semi-insulating GaAs Substrate with good flatness such as TTV<=3UM, BOW<=4um, and WARP<5um, TIR(Total Indicated Runout)<=3um, LFPD(Local Focal Plane Deviation)<=1um, LTV(Local Thickness Variation)<=1.5um.

Specification of Semi-insulating GaAs Substrate

Parameter Customer’sRequirements Guaranteed/Actual Values UOM
GrowthMethod: VGF VGF
ConductType:. S-I-N S-I-N
Dopant: Undoped Undoped  
Diameter: 100.0±0.2 100.0±0.2 mm
Orientation: (100)±0.30offtoward (110) (100)±0.30offtoward (110)
OFlocation/length: EJ|0-1-1|±0.50/32.5±1.0 EJ[0-1-1]±0.50/32.5±1.0
IFlocation/length: EJ|0-11|±0.50/18.0±1.0 EJ[0-11|±0.50/18.0±1.0
Resistivity: Min:0.6E8 Min:0.8E8 Max:2.4E8 ohm.cm
Mobility: Min:4500 Min:4769 Max:6571 cm2/v.s
EPD: Max:10000 Min:700 Max:700 /cm2
Thickness: 600±25 600±25 pm
Bow: Max:4 Max:4 μm
Warp: Max:5 Max:5 μm
TTV: Max:3 Max:3 μm
TIR:. Max:3 Max:3 pm
LFPD: Max:1 Max:1 pm
LTV: Max:1.5 Max:1.5 μm
PLTV: >90@15mm*15mm >90@15mm*15mm %
ParticalCount: <100/wafer(for particle>0.28um);
Haze<5ppm
<I00/wafer(for particle>0.28um);
Haze<5ppm
EdgeRounding: 0.375 0.375 mmR
Laser Marking: Backside Backside
SurfaceFinish-
front:
Polished Polished
SurfaceFinish
-back:
Polished Polished

 

What is the typical Carrier Concentration for Semi-insulating GaAs Substrate?

The carrier concentration for Semi-insulating GaAs wafer is E6-E7/cm3, typical value 6.71E6/cm3~1.12E7/cm3, please see below detail parmeters:

Item No. 4# 91#
Spec. 电阻率 迁移率 C.C 电阻率 迁移率 C.C
1 1.32E+08 5457 8.68E+06 1.70E+08 5482 6.71E+06
2 1.05E+08 5738 1.04E+07 1.63E+08 5193 7.38E+06
3 9.86E+07 5644 1.12E+07 1.58E+08 5392 7.34E+06

 

PL Mapping of Semi-insulating GaAs Substrate 

Semi-insulating GaAs Substrate

Semi-insulating GaAs Substrate

Semi-insulating GaAs Substrate

Semi-insulating GaAs Substrate

 

 

 

 

 

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

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