Semi-insulating GaAs substrates 3 inch

  • Home
  • News
  • Semi-insulating GaAs substrates 3 inch

Semi-insulating GaAs substrates 3 inch

Dia 3 inch Semi-insulating GaAs(Gallium Arsenide) substrates are available, please see below specification:

Parameters Specifications
Material VGF GaAs Single Crystal Wafer
Grade Prime, Epi-Ready
Doping Semi-Insulating, Undoped
Wafer OD  76.2+/-0.63mm
Wafer Orientation  (100)+/-0.25 deg.
Primary Flat Length 22.22+/-3.17 mm
Secondary Flat Length 11.15+/-1.52 mm
Primary Flat Location (01-1)+/-0.5◦ deg. (US SEMI)
Secondary Flat
Location		 (011)+/-0.5 deg. (US SEMI)
Primary/Secondary Flat
Orientation		 90◦+/-0.5◦
Secondary Flat is perpendicular to Primary Flat in Counter clockwise direction
Carrier Concentration <1E8 / cc
Resistivity >1E7Ohm-cm
Mobility >6000 cm2 /V-sec
EPD  <5000 / cm2
Thickness 625+/-25µm
TTV </=8.00µm
Bow </=10.00µm
Surface Finish Side 1 : Polished
Side 2 : Etched
Laser Mark On the front side, near Major Flat
(Vendor to provide Wafer identification
Number on the Wafer near the Major
Flat)
Quality Scratches, Edge chips, Sawmarks,
Cracks, Pits, Haze & Orange peel
should not be present.
SEMI- Standard M 9.2-89

 

For more information about Semi-insulating Gallium Arsenide substrates, please send us email at victorchan@powerwaywafer.com

 

2020-03-10

Share this post

Related Posts

2″ Silicon Wafer-8

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 275 P/P 2.5-3.5 SEMI Prime, n-type Si:P [111] 2″ 500 P/E 2.2-3.8 SEMI Prime, n-type Si:P [111] 2″ 300 P/E 1-10 SEMI Prime, , TTV<5μm n-type Si:P [111] 2″ 500 P/E 1-10 SEMI Prime, n-type Si:P [111] ±0.5° 2″ 6000 P/E 1-10 SEMI Prime, Individual cst n-type Si:Sb [111] ±0.5° 2″ 300 P/E 0.05-0.09 SEMI Prime, n-type Si:Sb [111-3.5°] ±0.5° 2″ 300 P/E 0.05-0.09 SEMI Prime, , in hard cassettes of 5 & 8 wafers n-type Si:Sb [111] 2″ 2900 P/P 0.013-0.015 Prime, NO Flats, Individual cst n-type Si:Sb [111-2.5°] ±0.5° 2″ 280 P/E 0.012-0.017 SEMI, n-type Si:As [111] ±0.5° 2″ 279 P/E 0.001-0.005 SEMI Prime p-type [...]

2019-03-07meta-author
4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm

PAM XIAMEN offers 4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm. 4inch Prime CZ-Si wafer 4 inch (+/- 0.5 mm), thickness = 525 ± 25 µm, orientation (100)(+/-0.5°), 2-side polished, p or n type (no matter) , ? Ohm cm (no matter), [...]

2019-06-28meta-author
2″ Silicon Wafer-10

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [111] 2″ 300 P/P FZ >150 SEMI Prime n-type Si:P [111] 2″ 500 P/P FZ 130-150 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ 125-210 SEMI Prime n-type Si:P [111] 2″ 380 P/E FZ 100-300 SEMI Prime n-type Si:P [111] 2″ 450 P/P FZ 100-230 Prime, NO Flats n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 80-100 SEMI Prime, in hard cst {as ingot to process} n-type Si:P [111] 2″ 300 P/P FZ 70-95 SEMI Prime n-type Si:P [111-1°] 2″ 300 P/E FZ 69-77 SEMI Prime n-type Si:P [111] 2″ 300 P/P FZ >60 SEMI Prime n-type Si:P [111] 2″ 300 P/E FZ 60-90 SEMI Prime n-type Si:P [111] ±0.5° 2″ 280 P/E FZ NTD 55-75 SEMI Prime, in hard cst {as ingot [...]

2019-03-07meta-author
Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics

Assessment of the overall resource consumption of germanium wafer production for high concentration photovoltaics   The overall resource requirements for the production of germanium wafers for III–V multi-junction solar cells applied in concentrator photovoltaics have been assessed based on up to date process information. By employing [...]

2013-10-15meta-author , ,
Lasing mechanism of InGaN-GaN-AlGaN MQW laser diode grown on SiC by low-pressure metal-organic vapor phase epitaxy

High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy A low-dislocation-density thick GaN layer was successfully grown using selective-area HVPE growth combined with epitaxial lateral overgrowth. The InGaN MQWsfabricated on this thick GaN layer showed superior optical properties compared with that on [...]

2013-05-02meta-author
6″ Silicon Wafer-5

PAM XIAMEN offers 6″ Silicon Wafer-5 as follows, while silicon wafer list includes, but not limited to the following. 150mm wafers Orientation100, SSP, Flat Semi Std Thickness 530+/-15um Doping N/A (no requirement) 1um thermal oxide For more polished wafer specification, please see below link: https://www.powerwaywafer.com/silicon-wafer For 6″ Silicon Wafer-5 please see below link: link 1.6″ [...]

2019-11-26meta-author