Semi-insulating GaAs substrates 3 inch

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Semi-insulating GaAs substrates 3 inch

Dia 3 inch Semi-insulating GaAs(Gallium Arsenide) substrates are available, please see below specification:

Parameters Specifications
Material VGF GaAs Single Crystal Wafer
Grade Prime, Epi-Ready
Doping Semi-Insulating, Undoped
Wafer OD  76.2+/-0.63mm
Wafer Orientation  (100)+/-0.25 deg.
Primary Flat Length 22.22+/-3.17 mm
Secondary Flat Length 11.15+/-1.52 mm
Primary Flat Location (01-1)+/-0.5◦ deg. (US SEMI)
Secondary Flat
Location		 (011)+/-0.5 deg. (US SEMI)
Primary/Secondary Flat
Orientation		 90◦+/-0.5◦
Secondary Flat is perpendicular to Primary Flat in Counter clockwise direction
Carrier Concentration <1E8 / cc
Resistivity >1E7Ohm-cm
Mobility >6000 cm2 /V-sec
EPD  <5000 / cm2
Thickness 625+/-25µm
TTV </=8.00µm
Bow </=10.00µm
Surface Finish Side 1 : Polished
Side 2 : Etched
Laser Mark On the front side, near Major Flat
(Vendor to provide Wafer identification
Number on the Wafer near the Major
Flat)
Quality Scratches, Edge chips, Sawmarks,
Cracks, Pits, Haze & Orange peel
should not be present.
SEMI- Standard M 9.2-89

 

For more information about Semi-insulating Gallium Arsenide substrates, please send us email at victorchan@powerwaywafer.com

 

2020-03-10

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