We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:
The role of carbon and SiO2 in solid-state sintering of SiC
Published by:
Eran Gross;Dana Benes Dahan;Wayne D. Kaplan.
Department of [...]
2019-11-05meta-author
Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells
Surface passivation has been recognized as a crucial step in the evaluation of minority carrier lifetime of photovoltaic materials as well as in the fabrication of high efficient solar cells. Dilute acids of [...]
PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
5 x 5 [...]
2019-05-15meta-author
The edges and notches of silicon wafers are usually machined by diamond grinding, and the grinding-induced subsurface damage causes wafer breakage and particle contamination problems. However, the edge and notch surfaces have large curvature and sharp corners, thus it is difficult to be finished [...]
2019-07-22meta-author
780nm laser wafers
Xiamen Powerway(PAM-XIAMEN), a leading developer and manufacturer of compound semiconductor epitaxial wafers providing 780nm AlGaInP/GaAs laser structure wafers.
Layer
Material
X
Y Strain tolerance
PL
Thickness
Type
Level
(ppm)
(nm)
(um)
(cm-3)
8
GaAs
0.1
P
>2.00E19
7
GaIn(x)P
0.49
+/-500
0.05
P
6
[Al(x)Ga]In(y)P
0.3
0.49
+/-500
1
P
5
GaIn(x)P
0.49
+/-500
0.5
U/D
4
GaAs(x)P
0.77
770
U/D
3
GaIn(x)P
0.49
+/-500
0.5
U/D
2
[Al(x)Ga]In(y)P
0.3
0.49
+/-500
1
N
1
GaAs
0.5
N
0
GaAs substrate
N
Source:PAM-XIAMEN
For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.
2016-06-13meta-author
GaInP/InP epi wafer
We can offer 2″ GaInP/InP epi wafer as follows:
2” GaInP epi layer: thickness:1um, Ga:In=1:1, epi layer:1-3um,
InP substrate:2”size,orientation (100) or (110), n type or semi-insulating, thickness:300-500um, single side polished.
Gallium indium phosphide (GaInP), is a semiconductor composed of indium, gallium and phosphorus. It is [...]
