Formation of porous structures in GaN/SiC heterostructures in light of the need for porous templates for improved GaN epitaxial growth has been studied. It has been observed that the built-in stress in the heterostructures greatly affects the process of porous structure formation. As a [...]
2018-01-30meta-author
PAM XIAMEN offers 8″Silicon As-cut Wafer
According to the production process, silicon wafers can be divided into as-cut wafer, lapped wafer, etched wafer and polished wafer.The first process of silicon wafer processing is orientation, roll grinding and square cutting. Silicon single crystal directional cutting can [...]
2020-06-12meta-author
PAM XIAMEN offers FZ Intrinsic undoped Silicon wafers.
Silicon wafers, per SEMI Prime, P/E 4″Ø×525±25μm,
FZ Intrinsic undoped Si:-[100]±0.5°, Ro=(5,000-10,000)Ohmcm,
One-side-polished, back-side Alkaline etched, SEMI Flat (one),
Sealed in Empak or equivalent cassette,
MCC Lifetime>1,000μs.
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-08-22meta-author
PAM XIAMEN offers Yttrium Stabilized Zirconia (YSZ) Single Crystals Substrate.
Main Parameters
Crystal structure
M3
Unit cell constant
a=5.147 Å
Melt point(℃)
2700
Density(g/cm3)
6
Hardness
8-8.5(mohs)
Purity
99.99%
Thermal expansion(/℃)
10.3×10-6
Dielectric constants
ε=27
Growth method
arcs
Size
10×3,10×5,10×10,15×15,,20×15,20×20
dia2” x 0.33mm dia2” x 0.43mm 15 x 15 mm
Thickness
0.5mm,1.0mm
Polishing
Single or double
Crystal orientation
<001>±0.5º
redirection precision
±0.5°
Redirection the edge:
2°(special in 1°)
Angle of crystalline
Special size and orientation are available upon [...]
2019-03-15meta-author
PAM XIAMEN offers LD Bare Bar for 880nm@cavity 2mm.
Brand: PAM-XIAMEN
Wavelength: 880nm
Filling Factor: 30%
Output Power: 80W
Cavity Length:2mm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., [...]
2019-05-09meta-author
Flexible semiconductor Ge thin film grown on mica by van der Waals epitaxy. The film experiences no degradation in its electrical properties even after repeated bending. Credit: Aaron Littlejohn, Rensselaer Polytechnic Institute
Germanium, an elemental semiconductor, was the material of choice in the early history [...]
2018-05-08meta-author