Extended defects and precipitates in LT-GaAs, LT-InAlAs and LT-InP
We review the main structural characteristics of low temperature molecular beam epitaxially produced GaAs (LT-GaAs), LT-InAlAs, and LT-InP. These materials exhibit almost identical behaviours with respect to growth and annealing conditions. For too low growth temperatures [...]
PAM XIAMEN offers 4″ Silicon EPI Wafers.
Substrate
EPI
Comment
Size
Type
Res
Ωcm
Surf.
Thick
μm
Type
Res
Ωcm
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
600 ±10%
N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
340 ±10%
N/N+
4″Øx380μm
n- Si:As[111]
0.004-0.008
P/EOx
43
n- Si:P
>200
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
50
n- Si:P
36±4
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
15
n- Si:P
5.4±0.7
N/N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
75
n- Si:P
66 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
78
n- Si:P
25 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/EOx
78
n- Si:P
20 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.001-0.005
P/E
80
n- Si:P
17.5 ±10%
N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
80
n- Si:P
60±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±1
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
80
n- Si:P
70±10%
N/N/N+
4″Øx525μm
n- Si:As[111]
0.0010-0.0035
P/E
10
n- Si:P
2±1
N/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
22.5
p- Si:B
15±10%
P/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
15
n- Si:P
6±0.9
P/N/N+
4″Øx525μm
n- Si:Sb[111]
0.008-0.020
P/E
38
p- [...]
2019-03-08meta-author
Silicon-based devices are approaching physical limits, and compound semiconductors have broad prospects. Meanwhile, in some high-power, high-voltage, high-frequency, and high-temperature applications (such as new energy and 5G communications), the performance of silicon-based devices has gradually failed to meet the requirements. Due to the excellent [...]
2022-05-13meta-author
PAM XIAMEN offers D263 Glass Wafers.
Please send us email at [email protected] if you need other specs and quantity.
Our clients use our Schott D263 glass for the following applications:
Touch Panel Controls
Liquid Crystal Displays (LCD)
Electroluminescent Displays
Solar Cell Protective Glass
Diam
Type
Dopant
Orien
Res (Ohm-cm)
Thick (um)
Polish
Grade
50.8mm
550um
DSP
76.2mm
550um
DSP
100mm
500um
DSP
150mm
550um
DSP
200mm
500um
DSP
300mm
500um
DSP
For more information, please visit our [...]
2019-02-27meta-author
PAM XIAMEN offers 4″ CZ Prime Silicon Wafer.
4″ epi CZ P-type (100)±0.5°
Thickness 525±15μm
Resistivity 0.015±0.005Ωcm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a [...]
2019-06-28meta-author
PAM XIAMEN offers BiFeO3 Film on (Pt/Ti/SiO2/Si).
150 nm BiFeO3 Film on Nb: SrTiO3: Substrate( wt 0.7% Nb),(100) 10x10x0.5mm, 1sp
400 nm BiFeO3 Film on Nb: SrTiO3: Substrate( wt 0.7% Nb),(100) 10x10x0.5mm, 1sp
BiFeO3 Film(400nm) on (Pt/Ti/SiO2/Si),10x10x0.5mm
For more information, please visit our website: [...]
2019-04-26meta-author