PAM-XIAMEN can offer GaAs epiwafer (gallium arsenide epiwafer) with p-type & n-type AlGaAs multilayer for VCSEL laser application. The specifications of GaAs epiwafer are as follow:
1. Specifications of GaAs Epiwafer with AlGaAs Multilayers
VCSEL, 980nm, GaAs epiwafer, 4″size
PAM210208
Layer No.
Material
Group
Repeat
Mole Fraction(x)
Strain(ppm)
PL(nm)
Thickness(nm)
Dopant
32
GaAs
–
–
–
–
–
156
C
31
Al(x)GaAs
–
–
0.04
–
–
50.5
C
30
Al(x)GaAs
–
–
0.87->0.04
–
–
20
C
29
Al(x)GaAs
–
–
0.87
–
–
59.7
C
28
Al(x)GaAs
–
16
0.04->0.87
–
–
20
C
27
Al(x)GaAs
–
0.04
–
–
51.5
C
26
Al(x)GaAs
–
0.87->0.04
–
–
20
C
25
Al(x)GaAs
–
0.87
–
–
59.7
C
24
Al(x)GaAs
–
–
0.04->0.87
–
–
20
C
23
Al(x)GaAs
–
–
0.04
–
–
32.9
C
22
Al(x)GaAs
–
–
0.80->0.04
–
–
20
C
21
Al(x)GaAs
–
–
0.98
–
–
20
C
20
Al(x)GaAs
–
–
0.8
–
–
61.6
C
19
GaAsP
–
–
–
–
–
–
UD
18
In(x)GaAs
–
–
–
–
970nm
–
UD
17
GaAsP
–
–
–
–
–
–
UD
16
In(x)GaAs
–
–
–
–
970nm
–
UD
15
GaAsP
–
–
–
–
–
–
UD
14
In(x)GaAs
–
–
–
–
970nm
–
UD
13
GaAsP
–
–
–
–
–
–
UD
12
Al(x)GaAs
–
–
0.87
–
–
59.7
Si
11
Al(x)GaAs
–
–
0.04->0.87
–
–
20
Si
10
Al(x)GaAs
–
–
0.04
–
–
51.5
Si
9
Al(x)GaAs
–
–
0.87->0.04
–
–
20
Si
8
Al(x)GaAs
–
6
0.87
–
–
59.7
Si
7
Al(x)GaAs
–
0.04->0.87
–
–
20
Si
6
Al(x)GaAs
–
0.04
–
–
51.5
Si
5
Al(x)GaAs
–
30
0.92->0.04
–
–
20
Si
4
Al(x)GaAs
–
0.92
–
–
59.8
Si
3
Al(x)GaAs
–
0.04->0.92
–
–
20
Si
2
Al(x)GaAs
–
0.04
–
–
51.5
Si
1
GaAs
–
–
–
–
–
500
Si
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Orientation Flat (OF)/mm
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Second Refer. Flat (RF)/mm
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350±20
Edge bevel
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Second Refer. Flat (RF)
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TTV
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