Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade )-5

PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).

PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.

3″ Diameter Wafers

1、Si 3″” N-type Un-doped

Si wafer (100), 3 “dia x0.5 mm, 1sp, N type un-doped R:>1000 ohm.cm

Si wafer (100), 3 “dia x0.5 mm, 2sp, N type, Undoped, R>1000 ohm-cm

Si wafer (111), 3 ” dia x 0.5 mm, 1sp, N type, undoped, resistivity: > 1000ohm-cm

Si wafer (111), 3 ” dia x 0.5 mm, 2sp, N type, undoped, resistivity: > 1000ohm-cm

2、Si 3″ P-type

Si wafer (100) 3 ” dia x 0.5 mm, 1sp P type, B doped, resistivities: 1-10 ohm-cm

Si wafer (100) 3″”dia x 0.5 mm, 2sp P type, B doped, resistivities: 0.005-0.028 ohm-cm”

Si wafer (100), 3 “dia x 0.1 mm, 1sp, P type, B doped, resistivities: 30-100 ohm-cm

Si wafer (100), 3 “dia x 0.35 mm, 1sp, P type, B doped, resistivities:0.001-0.005ohm-cm

Si wafer (100), 3 “dia x 0.38 mm, 1sp, P type, B doped, resistivities: 1-10 ohm-cm

Si wafer (100), 3 “dia x 0.5 mm, 1sp, P type, B doped, resistivities:0.002-0.0027ohm-cm

Si wafer (110) 3 ” dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm

Si wafer (111) 3 ” dia x 0.5 mm, 1sp P type, B doped, resistivity: 1-10 ohm-cm

3、Si 3″ N-type Doped

Si wafer (100), 3 “dia x0.35 mm, 1sp, N type, As-doped, R:0.002-0.008 ohm.cm

Si wafer (100), 3 “dia x0.35 mm, 2sp, N type, As-doped, R:0.001-0.005 ohm.cm

Si wafer (100), 3 “dia x0.38 mm, 1sp, N type, As-doped, R:0.001-0.005 ohm.cm

Si wafer (100), 3 “dia x0.381 mm, 1sp, N type, P-doped, R:5-10 ohm.cm

Si wafer (100), 3 “dia x0.5 mm, 1sp, N type, P-doped, R:1-10 ohm.cm

Si wafer (110), 3″dia x 0.5 mm, 1sp, N type, P doped, resistivity: 1-10 ohm-cm

Si Wafer (100) 4 deg. off toward (110), 3″dia x 0.5 mm, 1 sp, N type, P doped

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.