Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade )-6

PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).

PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.

4″ Diameter Wafers

1、Si 4″ undoped

Si Wafer (100), 4″ dia x 0.5 mm, 2SP, Undoped with resistivities: >10,000 ohm-cm

Si Wafer (100), 4″ dia x 0.2 mm, 1SP, Undoped with resistivities: >1,000 ohm-cm

Si Wafer (100), 4″ dia x 0.5 mm, 1SP, Undoped with resistivities: >1,000 ohm-cm

Si Wafer (100), 4″ dia x 0.5 mm, 1SP, Undoped with resistivities: >5000 ohm-cm

Si Wafer (100), 4″ dia x 0.5 mm, 1SP, Undoped with resistivities: 20,000-40,000 ohm-cm

Si Wafer (100), 4″ dia x 0.5 mm, 1SP, Undoped with resistivities: 8000-9000 ohm-cm

Si Wafer (100), 4″” dia x 0.5 mm, 1SP, Undoped with resistivities:> 10,000 ohm-cm”

Si Wafer (100), 4″ dia x 0.5 mm, 1SP, Undoped with resistivities:> 15,000 ohm-cm

Si Wafer (111), 4″ dia x 0.675 mm, 1SP, Undoped with resistivities: >20,000 ohm-cm

Si Wafer (100), 4″ dia x 0.5 mm, 2SP, Undoped, resistivities: > 1000 ohm-cm

Si (510)wafer = Si (100)) with 11.3 degree miscut towards <100><100> , 4 ” dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm)

Si Wafer (110), 4 ” dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm)

Si Wafer (111), 4 ” dia x 0.4 mm, 1SP, N Type, undoped, FZ, R>5000 ohm-cm

Si Wafer (111), 4 “” dia x 0.5 mm, 1SP, N Type (undoped, FZ R>10,000 ohm-cm)”

Si Wafer (111), 4 ” dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm)

Si Wafer (111), 4″dia x 0.5 mm, 1SP, N Type (undoped, FZ R>5000 ohm-cm)

Si Wafer (111)with 10 degree miscut towards <112><110> , 4 ” dia x 0.5 mm, 1SP, N Type (undoped, FZ R>1000 ohm-cm)

2、Si 4″ N-type Doped

Si Wafer (100) 4″dia x 0.5 mm 2SP, N Type P doped Resistivities: 0.1-0.5 ohm-cm

Si Wafer (100) 4″dia x 0.525 mm 1SP, N Type P doped Resistivities: 0.1-1 ohm-cm

Si Wafer (100), 4″dia x 0.525 mm, 1SP, N Type, P doped, Resistivities: 1-10 ohm-cm

Si Wafer (111), 4 ” dia x 0.3 mm, N Type P doped, 1SP, Resistivities: 15,000 – 25,000 ohm-cm

Si Wafer (111)with 4 deg. off, 4 ” dia x 0.525 mm, 1SP, N Type (P doped), resistivity: 1-10 ohm-cm

Si Wafer (100), 4 ” dia x 0.525 mm, 1SP, N Type ,Sb doped,R:0.01-0.02 ohm.cm

Si Wafer (111), 4 ” dia x 0.5 mm, 1SP, N Type (Sb doped), resistivity: 0.008-0.02 ohm-cm

Si Wafer (100), 4 ” dia x 0.525 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm

Si Wafer (100), Prime Grade, 4 ” dia x 0.2 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm

Si Wafer (111), Prime Grade, 4 ” dia x 0.525 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm

Si Wafer (111)with 4 deg,off , Prime Grade, 4 ” dia x 0.5 mm, 1SP, N Type, As doped, resistivity: 0.001-0.005 ohm-cm

3、Si 4″ P-type Doped

Si Wafer (100), 4 ” dia x 0.275 mm, P Type B doped, 1SP, Resistivities: 0.5 – 2.0 ohm-cm

Si Wafer (100), 4 ” dia x 0.525 mm, 1SP, P Type, B doped, Resistivities: 0.1 – 1.0 ohm-cm

Si Wafer (100), 4 ” dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 0.001-0.005 ohm-cm

Si Wafer (100), 4 ” dia x 0.525 mm, 1SP, P Type, B doped, resistivities: 1-10 ohm-cm

Si Wafer (100), 4 ” dia x 0.525 mm, 1SP, P Type, B doped, resistivities:0.01-0.02ohm-cm

Si Wafer (100), 4 ” dia x 0.2 mm, 1SP, P Type, B doped,R:0.001-0.005 ohm.cm

Si Wafer (100), 4 ” dia x 0.5 mm, 2SP, P Type B doped, Resistivities: 0.1-0.3 ohm-cm

Si Wafer (111) 4 +/- 0.5 degree off , 4 ” dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 0.004-0.006 ohm-cm

Si Wafer (111) with 4 degree off , 4 ” dia x 0.5 mm, 1SP, P Type, B doped, resistivity: <0.01 ohm-cm

Si Wafer (111)4 +/- 0.5 degree off , 4 ” dia x 0.525 mm, 1SP, P Type, B doped, resistivity: 0.001 -0.005 ohm-cm

Si Wafer (111) 4 +/- 0.5 degree off Prime Grade, 4 ” dia x 0.5 mm, 1SP, P Type, B doped, resistivity: 2.3-3.3 ohm-cm

Si Wafer (111) 4 +/- 0.5 degree off , 4 ” dia x 0.525 mm, 1SP, P Type, B doped, resistivities:1-10 ohm-cm

Si Wafer (111) miscut 0+/-0.5 degree, 4 ” dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:0.001-0.005ohm-cm

Si Wafer (111) miscut 0+/-0.5 degree, 4 ” dia x 0.525 mm, 1SP, P Type, B doped, Resistivities:1-10 ohm-cm

Si Wafer (100), 4 ” dia x 0.525 mm, 1SP, P Type, B doped, Resistivities>200 ohm-cm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

Share this post