Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
Leading manufacturer of compound semiconductor material in China
Q:For Si-doped GaN, what are the resistivity and mobility?
A:Mobility:150-200Resistivity<0.05ohm.cm,
Q: SiC wafer reclaim, can you gurantee surface roughness<=0.3nm? A: Sure, no problem
Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide? A: Sure.
Q:Dislocation density < 1E8 of GaN on sapphire from what kind of characterization? A:Considering edge dislocation and mixing dislocation and then abtained by XRD
Q: Regarding LED epi wafer,does the price include fabrication of p and n metal contacts? If not, can you fabricate p and n contacts plus SiO2 passivation based on my design? This can turn to a bigger project. A: Sorry, we can not offer fabrication of [...]
Q:What atomic ratio for Si/C in SiC ? A:Atomic ratio for Si/C in SiC is 1:1
Q:For 4” pss wafer, the light comes out from the p-GaN side not from sapphire, so I can’t do flip chip packaging. Also I don’t know whether laser liftoff is possible for pss wafer. Is it possible you can share any image of the etched surface of [...]