Q:For Si-doped GaN, what are the resistivity and mobility?

A:Mobility:150-200Resistivity<0.05ohm.cm,

2018-06-19

Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium composition? Any In segregation or clusters?

Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium [...]

2018-06-19meta-author

Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers?

Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers? A: Our Nitrogen dopant concentration is 1E18/cm3-1E19/cm3, which belongs to heavy dopant.

2018-06-19meta-author

Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation?

Q: Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation? A:Yes!

2018-06-19meta-author

Q:We are using 40×40 mil size and 45×45 mil size chips for 1W . And 45×22 or 38x22mil size for 0,5w . Eff. is min. 120lm/w , package form is 3535 ceramic no lens flat type, and 5050 smd flat type.Cct 6500k, cri min 70-75, drive current 350 mA ( it can be change if you have suggest for it ), can you give us suggestion?

Q:We are using 40×40 mil size and 45×45 mil size chips for 1W . And 45×22 or 38x22mil size for 0,5w . Eff. is min. 120lm/w , package form is 3535 ceramic no lens flat type, and 5050 smd flat type.Cct 6500k, cri min 70-75, [...]

2018-06-19meta-author

Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide?

Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide? A: Sure.

2018-06-19meta-author

One Side Polished Silicon Wafer

Q:We request for the following items 1. Silicon (Si) single crystal wafers, polished on one side N-type, orientation<100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 mm 2. Silicon (Si) single crystal wafers, polished on one side P-type, orientation <100>, Resistivity 5E-3 ohm.cm, Thickness: 0.1 to 0.5 [...]

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Q:For Si-doped GaN, what are the resistivity and mobility?

Q:For Si-doped GaN, what are the resistivity and mobility?

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Related Posts

Q:Do you have the optical characterization data for this InGaN wafer? We want to know want wavelength it emits when excited optically. A PL spectrum would be perfect. Also, is the InGaN grown on any buffer layer? What is the uniformity of the Indium composition? Any In segregation or clusters?

Q:I want to know the dopant concentration of SiC substrate that you normally provide ? What is the maximum Nitrogen dopant concentration that you can provide? I am looking for heavily nitrogen doped SiC wafers?

Regarding blue LED epi wafer, after MOCVD, do you anneal the wafer for p-GaN activation?

Q:Could you tell us also what type of 4-H polytype SiC sudstrate you are able to provide?

One Side Polished Silicon Wafer

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers

Float-Zone Mono-Crystalline Silicon

Test Wafer Monitor Wafer Dummy Wafer

Nanofabrication Photoresist

Photo Mask

CdZnTe (CZT) Wafer

Ge(Germanium) Single Crystals and Wafers