PAM XIAMEN offers 3″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
n-type Si:P
[100]
3″
1800
P/P
1-5
SEMI Prime, Individual cst
n-type Si:P
[100]
3″
5000
P/E
1-30
Prime, NO Flats, Individual cst
n-type Si:Sb
[100]
3″
800
P/E
0.022-0.028
SEMI Prime
n-type Si:Sb
[100]
3″
380
P/E
0.021-0.023
SEMI Prime
n-type Si:Sb
[100]
3″
500
P/E
0.021-0.022
SEMI Prime
n-type Si:As
[100]
3″
1000
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[211]
3″
450
P/P
50-65
SEMI Prime
n-type Si:P
[111-4°]
3″
250
P/E
50-220
Prime, NO Flatst
n-type Si:P
[111]
3″
10000
P/E
20-60
SEMI Prime, Individual cst
n-type Si:P
[111-3°]
3″
380
P/E
19-25
SEMI Prime
n-type Si:P
[111-0.5° towards[110]] ±0.25°
3″
1400
P/E
>5
SEMI Prime, hard cst, LaserMark
n-type Si:P
[111]
3″
6000
P/E
5-10
SEMI Prime, Individual cst
n-type Si:P
[111]
3″
525
P/E
4.5-5.0
SEMI Prime
n-type Si:P
[111]
3″
500
P/P
4-6
Prime, NO [...]
2019-03-06meta-author
PAM XIAMEN offers MoS2 EPI film on SiO2/Si, Si (100)10×10 x 0.5 mm,1sp, SiO2:300nm, MoS film:0.8nm.
Specifications:
Crystal: 0.8 nm MoS2 EPI film on SiO2/Si
Si(100) 10×10 x0.5 mm,1sp
MoS Film: 0.8nm
SiO2=300nm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email [...]
2019-04-28meta-author
PAM XIAMEN offers Silicon Ingots.
Material Description
3″Ø×174mm p-type Si:Ga[100] (1.77-2.13)Ωcm, Ingot “As-Grown”, (82-85)mmØ, RRV=8%, Oxygen=6.2E17/cc
4″Ø×(504+504+523+147+144)mm, p-type Si:B[111], As-Grown, made by Crysteco (5 ing 6c, 10b(Gnd 1F), 14a(Gnd 1F), 21Aa, 30d(Gnd 1F))
3″Ø ingot p-type Si:B[111] ±0.5°, Ro: 1-10 Ohmcm, As-Grown, (3 ingots: 217mm, 32mm, 169mm)
3″Ø×36mm ingot, p-type Si:B[211]±2°, [...]
2019-03-08meta-author
PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs / GaAs LED epi wafer with wavelength 850-880 nm and 890-910nm:
1. Red Infrared AlGaAs / GaAs LED Epi Wafer
PAM-190723-LED
Structure
Thickness, um
Type
Composition
CC, cm-3
Wide-gap window
1
р
AlхGa1-хAs (х=0,25-0,3)
(2-5) ∙1018
Barrier layer
0.06
р
AlхGa1-хAs (х=0,25-0,3)
(0.8-1) ∙1018
Active layer
–
GaAs
undoped
–
Al0,2Ga0,8As
Barrier layer
0.06
n
AlхGa1-хAs (х=0,25-0,3)
(0.5-1) ∙1017
Wide-gap window
6
n
AlхGa1-хAs
(1-2)∙1018
(х=0,3-0,35)
Stop layer
0.1
–
AlхGa1-хAs
–
(х=0,9-1)
Buffer layer
–
n
GaAs
–
Substrate
–
n+
GaAs
–
2. Where is the [...]
2020-05-18meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[111]
2″
280
P/E/P
1-20
SEMI Prime
p-type Si:B
[111-1.5°]
2″
400
P/E
1-10
SEMI Prime
p-type Si:B
[111]
2″
500
P/E
1-10
SEMI Prime,
p-type Si:B
[111-10° towards[112]]
2″
280
P/E
0.5-0.6
SEMI Prime
p-type Si:B
[111-3°]
2″
300
P/P
0.016-0.018
SEMI Prime
p-type Si:B
[111-3.5°]
2″
280
P/P
0.01-0.02
SEMI Prime
p-type Si:B
[111]
2″
600
P/E
0.01-0.05
SEMI Prime
p-type Si:B
[111-6° towards[110]]
2″
275
P/E
0.001-0.005
SEMI Prime
n-type Si:P
[110]
2″
1000
P/P
~4
NO Flats
n-type Si:P
[110]
2″
950
P/P
2.5-3.5
1 F @ <1,-1,0>
n-type Si:P
[110]
2″
450
P/P
~0.6
1 F @ <001>
n-type Si:P
[110]
2″
1000
P/P
0.5-1.0
PF<111> SF 109.5°
n-type Si:P
[100]
2″
500
P/P
800-1,500
SEMI Prime,
n-type Si:P
[100]
2″
300
P/E
>50
SEMI Prime,
n-type Si:P
[100]
2″
5000
P/E
42-53
SEMI Prime, , Individual cst
n-type [...]
2019-03-07meta-author
PAM XIAMEN offers KCl, Potassium Chloride Crystal Substrates.
Main Parameters
Crystal structure
face centered cubic, M3 a = 6.291 Å
Growth method
crystallization process
Density
1.98(g/cm3)
Melting point
770 °C
Refractive index
1.49025 (at 589 nm)
T
0.91
Nf
0.01114
Surface roughness
<10 nm due to hygroscopic [...]
2019-03-12meta-author