Si-Ge alloy crystal

PAM XIAMEN offers Si-Ge alloy crystal.

Si-Ge or silicon-germanium alloy wafer is commonly used as semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. Si-Ge alloys wafer are of interest because they have higher mobility than silicon and can be produced with bandgaps between those of silicon and germanium. This relatively new technology offers opportunities in mixed-signal and anolog circuit IC design and manufacture; the substrates can also be used for epitaxy, photodetectors, high efficiency solar cells, high-performance discrete devices, and other electronic and photonic devices.

Si-Ge(2 wt% Ge)Wafer (100), 4 ” dia x 0.5 mm, 2SP, P- Type, resistivities:7-8 ohm-cm

Single crystal               Si-Ge   ( 2 wt % Ge)
Conductivity:                P type
Resistivity:                  7-8  ohm-cm
Size:                            4″ diameter x 0.5 mm
Orientation:                  (100)  
Polish:                          Two sides polished
Surface roughness:       < 5A

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

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