Si-Ge alloy crystal

Si-Ge alloy crystal

PAM XIAMEN offers Si-Ge alloy crystal.

Si-Ge or silicon-germanium alloy wafer is commonly used as semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. Si-Ge alloys wafer are of interest because they have higher mobility than silicon and can be produced with bandgaps between those of silicon and germanium. This relatively new technology offers opportunities in mixed-signal and anolog circuit IC design and manufacture; the substrates can also be used for epitaxy, photodetectors, high efficiency solar cells, high-performance discrete devices, and other electronic and photonic devices.

Si-Ge（2 wt% Ge）Wafer (100), 4 ” dia x 0.5 mm, 2SP, P- Type, resistivities:7-8 ohm-cm

Single crystal               Si-Ge   （ 2 wt % Ge）
Conductivity:                P type
Resistivity:                  7-8  ohm-cm
Size:                            4″ diameter x 0.5 mm
Orientation:                  (100)  
Polish:                          Two sides polished
Surface roughness:       < 5A

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

You can get our free technology service from enquiry to after service based on our 25+ experiences in semiconductor line.

2019-05-16

Share this post

Related Posts

3″ Silicon Wafer-12

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 3″ 1800 P/P 1-5 SEMI Prime, Individual cst n-type Si:P [100] 3″ 5000 P/E 1-30 Prime, NO Flats, Individual cst n-type Si:Sb [100] 3″ 800 P/E 0.022-0.028 SEMI Prime n-type Si:Sb [100] 3″ 380 P/E 0.021-0.023 SEMI Prime n-type Si:Sb [100] 3″ 500 P/E 0.021-0.022 SEMI Prime n-type Si:As [100] 3″ 1000 P/E 0.001-0.005 SEMI Prime n-type Si:P [211] 3″ 450 P/P 50-65 SEMI Prime n-type Si:P [111-4°] 3″ 250 P/E 50-220 Prime, NO Flatst n-type Si:P [111] 3″ 10000 P/E 20-60 SEMI Prime, Individual cst n-type Si:P [111-3°] 3″ 380 P/E 19-25 SEMI Prime n-type Si:P [111-0.5° towards[110]] ±0.25° 3″ 1400 P/E >5 SEMI Prime, hard cst, LaserMark n-type Si:P [111] 3″ 6000 P/E 5-10 SEMI Prime, Individual cst n-type Si:P [111] 3″ 525 P/E 4.5-5.0 SEMI Prime n-type Si:P [111] 3″ 500 P/P 4-6 Prime, NO [...]

2019-03-06meta-author
MoS2 EPI film

PAM XIAMEN offers MoS2 EPI film on SiO2/Si, Si (100)10×10 x 0.5 mm,1sp, SiO2:300nm, MoS film:0.8nm. Specifications: Crystal: 0.8 nm MoS2 EPI film on SiO2/Si Si(100) 10×10 x0.5 mm,1sp MoS Film: 0.8nm SiO2=300nm For more information, please visit our website: https://www.powerwaywafer.com, send us email [...]

2019-04-28meta-author
Silicon Ingots-8

PAM XIAMEN offers Silicon Ingots. Material Description 3″Ø×174mm p-type Si:Ga[100] (1.77-2.13)Ωcm, Ingot “As-Grown”, (82-85)mmØ, RRV=8%, Oxygen=6.2E17/cc 4″Ø×(504+504+523+147+144)mm, p-type Si:B[111], As-Grown, made by Crysteco (5 ing 6c, 10b(Gnd 1F), 14a(Gnd 1F), 21Aa, 30d(Gnd 1F)) 3″Ø ingot p-type Si:B[111] ±0.5°, Ro: 1-10 Ohmcm, As-Grown, (3 ingots: 217mm, 32mm, 169mm) 3″Ø×36mm ingot, p-type Si:B[211]±2°, [...]

2019-03-08meta-author
Red Infrared AlGaAs /GaAs LED Epi-Wafer

PAM-XIAMEN offers 2inch or 4inch red infrared AlGaAs / GaAs LED epi wafer with wavelength 850-880 nm and 890-910nm: 1. Red Infrared AlGaAs / GaAs LED Epi Wafer PAM-190723-LED Structure Thickness, um Type Composition CC, cm-3 Wide-gap window 1 р AlхGa1-хAs (х=0,25-0,3) (2-5) ∙1018 Barrier layer 0.06 р AlхGa1-хAs (х=0,25-0,3) (0.8-1) ∙1018 Active layer   – GaAs undoped   – Al0,2Ga0,8As Barrier layer 0.06 n AlхGa1-хAs (х=0,25-0,3) (0.5-1) ∙1017 Wide-gap window 6 n AlхGa1-хAs (1-2)∙1018 (х=0,3-0,35) Stop layer 0.1 – AlхGa1-хAs – (х=0,9-1) Buffer layer – n GaAs – Substrate – n+ GaAs –   2. Where is the [...]

2020-05-18meta-author
2″ Silicon Wafer-13

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment p-type Si:B [111] 2″ 280 P/E/P 1-20 SEMI Prime p-type Si:B [111-1.5°] 2″ 400 P/E 1-10 SEMI Prime p-type Si:B [111] 2″ 500 P/E 1-10 SEMI Prime, p-type Si:B [111-10° towards[112]] 2″ 280 P/E 0.5-0.6 SEMI Prime p-type Si:B [111-3°] 2″ 300 P/P 0.016-0.018 SEMI Prime p-type Si:B [111-3.5°] 2″ 280 P/P 0.01-0.02 SEMI Prime p-type Si:B [111] 2″ 600 P/E 0.01-0.05 SEMI Prime p-type Si:B [111-6° towards[110]] 2″ 275 P/E 0.001-0.005 SEMI Prime n-type Si:P [110] 2″ 1000 P/P ~4 NO Flats n-type Si:P [110] 2″ 950 P/P 2.5-3.5 1 F @ <1,-1,0> n-type Si:P [110] 2″ 450 P/P ~0.6 1 F @ <001> n-type Si:P [110] 2″ 1000 P/P 0.5-1.0 PF<111> SF 109.5° n-type Si:P [100] 2″ 500 P/P 800-1,500 SEMI Prime, n-type Si:P [100] 2″ 300 P/E >50 SEMI Prime, n-type Si:P [100] 2″ 5000 P/E 42-53 SEMI Prime, , Individual cst n-type [...]

2019-03-07meta-author
KCL POTASSIUM CHLORIDE CRYSTAL SUBSTRATES

PAM XIAMEN offers KCl, Potassium Chloride Crystal Substrates.                                         Main Parameters Crystal structure face centered cubic, M3  a = 6.291 Å Growth method crystallization process Density 1.98（g/cm3） Melting point 770 °C Refractive index 1.49025 (at 589 nm) T 0.91 Nf 0.01114 Surface roughness <10 nm due to hygroscopic [...]

2019-03-12meta-author