Si Epi Wafers for Low Gain Avalanche Diode *S
The Low Gain Avalanche Diode (LGAD) is a novel semiconductor detection technology proposed by the RD50 collaboration group. Its main feature is to achieve controllable internal gain by injecting high concentration P-type doping under the PN junction of traditional N-in-P silicon pixel detectors. This type of detector has the characteristics of fast response and radiation resistance, and quickly gained attention in the field of particle physics experiments. PAM-XIAMEN can grow silicon epitaxial wafers for the fabrication of low gain avalanche detectors, taking the following structure as an example:
1. Si Epi Structure for Low Gain Avalanche Diode
| Epi layer | Material | Thickness | Doping concentration |
| Epitaxial layer | p- Si | – | 5·1013 cm−3 |
| Substrate | p++ Si |
2. Types of Low Gain Avalanche Diodes
Each type of LGAD has its unique advantages, disadvantages, and applicable fields. By selecting different types of LGAD, a balance can be found between temporal resolution, spatial resolution, and radiation tolerance to meet different experimental needs.
|
Type |
Spatial Resolution | Timing Resolution | Radiation Hardness | Applications |
| Standard LGAD | Low | High | Moderate | High-energy physics, timing detectors |
| AC-LGAD | High | High | Moderate | Particle tracking, timing and spatial detection |
| DC-LGAD | Low | High | Moderate | Timing-focused applications |
| 3D LGAD | High | High | High | High-radiation environments |
| iLGAD | Moderate | Moderate | High | Radiation-hardened applications |
| dLGAD | Binary | High | TBD | Digital processing, fast timing |
| UFSD | Low | Ultra-High | Moderate | Time-of-flight, high-speed timing |
| RH-LGAD | Low | High | Very High | High-radiation environments |
3. Research Progress on Low Gain Avalanche Diode
In nuclear and high-energy physics applications, low gain silicon avalanche diode have been proven to perform well as particle detectors in terms of temporal resolution. Compared with silicon, 4H-SiC has a wider bandgap, better radiation resistance, higher saturation carrier velocity, and lower temperature sensitivity. Therefore, 4H-SiC LGAD is suitable for detecting minimal ionized particles (MIPs) under extreme radiation and temperature conditions. Researchers are exploring the use of new materials such as SiC semiconductor material to replace silicon and further improve the radiation resistance of LGAD. However, due to the complexity of SiC device design and production, high-performance SiC LGAD devices are still under research. PAM-XIAMEN can grow customized SiC epitaxial wafers for LGAD preparation. Send your requirements to [email protected], we will give you the most professional advice.
Whether you need Si wafers for research or for industrial applications, please contact us email at [email protected] and [email protected].