Si wafer Thickness: 675 ± 25 um

PAM XIAMEN offers Si wafer Thickness: 675 ± 25 um.

Si wafer
Method: Cz
Orientation: <111>
Type: P-Type
Dopant: Boron
Resistivity: 0.1-13 ohm.cm
Diameter: 150 ± 0.1 mm
Thickness: 675 ± 25 um
Chamfer
Front side: Epi-ready
Back side: etched
BOW < 30um
Warp < 30um

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.

Share this post