PAM-XIAMEN offer SiC substrate with Ag, Ti or Ni or Au metal layers with small chips:
10×10mm SiC substrate / Ti(0.1um)-Ni(0.1um)-Au(2um), n type.
Thickness: approx. 350um
Backside surface: with metal films of Ti-Ni-Au
Metal thickness: Ti(0.1um)-Ni(0.1um)-Au(2um),
2. SiC Wafer with thermal oxide and LPCVD nitride or Silicon Carbide Wafer with the sputtering Cr/Au Layer, such as SiC wafer with 1um SiO2 by PECVD
3.SiC Wafer with Ti coating on backside, thickness:100nm