Thermodynamics and kinetic theory of nucleation and the evolution of liquid precipitates in gallium arsenide wafer
We study nucleation and evolution of liquid droplets in semi-insulating solid gallium arsenide (GaAs). For a realistic modelling, the crucial issue of a combined thermodynamic and kinetic treatment is [...]
Indium Arsenide (InAs) wafer can be provided by PAM-XIAMEN with a diameter up to 2 inch and a wide choice in off or exact orientation, high or low concentration and surface processed to optoelectronics industry. InAs wafer is an important III-V narrow band gap [...]
A template-based vision system for the 100% inspection of wafer die surfaces has been developed. Design goals included a requirement for the detection of flaws as small as two thousandths of an inch on parts up to 8-in. wafer size. Each die is treated [...]
Indium phosphide (InP) is one of the III-V compound semiconductors. It is a new generation of electronic functional materials after silicon and gallium arsenide. Indium phosphide semiconductor material has many excellent properties: direct transition band structure, high photoelectric conversion efficiency, high electron mobility, easy [...]
2022-11-29meta-author
The GaN lattice mismatch grown on silicon carbide substrates is low. The low lattice mismatch of gallium nitride on SiC wafers indicates that the lattices of layer 1 and layer 2 match each other. The better the match, the fewer defects, and the better the performance and lifetime [...]
2021-04-26meta-author
PAM-XIAMEN supplies 6 inch undoped GaAs substrates, which are prime grade and mechanical grade grown by VGF. For wafer details, please view specifications listed below:
1. Prime Grade Undoped GaAs
PAM220704-GaAs-Un
Parameter
GaAs-Un-6in-625um-PP
UOM
Growth method
VGF
Grade
Prime grade (Epi-ready)
Dopant
Undoped
Orientation
(100) ±0.5°
Orientation Angle
N/A
°
Diameter
150.0±0.2
mm
Thickness
625±25 or 675±25
um
Notch
[010] ± [...]
2022-07-04meta-author