2″ Free Standing Gallium Nitride (GaN) Substrate
PAM-XIAMEN,a leading supplier of GaN serie,is pleased to announce n+ c-plane 2″ SIZE Free standing gallium nitride (GaN) substrate with low Marco Defect Density <=2cm-2 are on mass production. (more…)
2012-03-06meta-author
Powerway Wafer offers III-nitride GaN LED Epi wafer on flat or patterned Sapphire as listed below, which emits blue or green lights. The GaN LED market size is 50mm, 100mm, 150mm or 200mm. The GaN LED emission wavelength can reach 530nm.
A high crystal quality GaN can be gained by depositing [...]
2020-03-18meta-author
Highlights
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The high-performance MOS HEMTs have been fabricated with 20 nm SiO2used as a gate-insulator.
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The piezotronic effect is introduced to effectively modulate properties of HEMTs by applying external stress on the device.
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The work provides deep comprehension and potential uses of the piezotronic-effect modulation AlGaN/GaN heterostructures.
Abstract
The metal-oxide-semiconductor [...]
2017-10-12meta-author
PAM-XIAMEN offers diamond on silicon wafer. Since diamond has a wide band gap, diamond thin films on silicon wafer, which is diamond epitaxial growth on silicon by MPCVD, is applied to wide band gap semiconductors, such as gas sensor devices, temperature sensor devices, radiation/infrared [...]
2019-04-19meta-author
‘Optically pumped’ laser closer to improving processing speed of sensors
Researchers are developing a new material that could improve processing speed of sensors and other electronic components. Credit: University of Arkansas
Imagine creating a material for the digital information highway that allows a fast lane of [...]
2018-02-11meta-author
The global demand for ultra-bright blue and green LEDs has driven the development of LED nitride wafer technologies. Among them, sapphire substrate is currently the most common substrate material in GaN epitaxial growth, and it is also the substrate of epitaxial GaN material with [...]
2022-03-25meta-author