1470 / 1550nm High Power Laser Single Chip
PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:
Option1:1.5w:
Item
Parameters
wavelength
1470/1550nm
power
1.5 W
Working current
4 A
Working voltage
1.4 V
Strip width
96 μm
size
1000*500*150 μm
Divergence angle
11/31 degrees
Photoelectric conversion efficiency
26%
Option2: 3w:
Item
Parameters
wavelength
1470/1550nm
power
3 W
Working current
9A
Working voltage
1.5V
Strip width
96 μm
size
2000*500*150 μm
Divergence angle
11/28 degrees
Photoelectric conversion [...]
2020-06-17meta-author
lapped wafers
PAM-XIAMEN offers lapped silicon carbide wafers, As-cut wafers are lapped and cleaned to be qualified as lapped wafers. What is wafer lapping? Wafer lapping is a global flattening process that improves wafer flatness by removing surface damage (usually from back grinding). It is most [...]
2018-08-07meta-author
PAM XIAMEN offers LiF crystal.
LiF (100) 10x10x1.0mm, 1SP
LiF (100) 10x10x1.0mm, 2SP
LiF (111) 10x10x1.0mm, 1SP
LiF (111) 10x10x1.0mm, 2SP
LiF (110) 10x10x1.0mm, 1SP”
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen [...]
2019-05-08meta-author
PAM XIAMEN offers TiO2 Coated Sodalime Glass.
TiO2( 150nm) Coated Sodalime Glass 1″ x1″x 0.7mm
TiO2 Coated Sodalime Glass
Dimension: 1″ x1″x 0.7mm
Polish: both sides are optically clear
Nominal TiO2 film thickness: 150 nm +/- 10%
For more information, please visit our website: [...]
2019-04-29meta-author
PAM XIAMEN Offers Epitaxial growth of AlGaN/GaN based HEMT on Si wafers
Recently, PAM XIAMEN, a leading supplier of GaN epitaxial wafers, announced that it has successfully developed “6-inch silicon-on-silicon (GaN-on-Si) epitaxial wafers” and its 6 inch size is on mass production.
PAM XIAMEN is effective [...]
2019-02-11meta-author
Unusual defects, generated by wafer sawing: Diagnosis, mechanisms and how to distinguish from related failures
In the wafer sawing process, unusual failures were observed and their root causes have been investigated. Besides classical and well-known failures, the following failure mechanisms were found. Surface-ESD (ESDFOS), caused [...]