SiC Ingots

SiC Ingots

PAM-XIAMEN offers n type SiC ingots with 4H or 6H polytype in on axis or 4deg.off axis in different quality grades for researcher and industry manufacturers, size from 2” to 4”, thickness from5-10mm to >15mm.   

1. Specifications of SiC Ingots

4″ 4H Silicon Carbide
Item No.TypeOrientationThicknessGradeMicropipe DensitySurfaceUsable area
           N-Type 
S4H-100-N-SIC-C0510-AC-D4″ 4H-N0°/4°±0.5°5~10mmD <100/cm2As-cut*
S4H-100-N-SIC-C1015-AC-C4″ 4H-N0°/4°±0.5°5~10mmC <50/cm2As-cut*
3″ 4H Silicon Carbide
Item No.TypeOrientationThicknessGradeMicropipe DensitySurfaceUsable area
          N-Type 
S4H-76-N-SIC-C0510-AC-D3″ 4H-N0°/4°±0.5°5~10mmD <100/cm2As-cut*
S4H-76-N-SIC-C1015-AC-D3″ 4H-N0°/4°±0.5°10~15mmD <100/cm2As-cut*
S4H-76-N-SIC-C0510-AC-C3″ 4H-N0°/4°±0.5°5~10mmC <50/cm2As-cut*
S4H-76-N-SIC-C1015-AC-C3″ 4H-N0°/4°±0.5°10~15mmC <50/cm2As-cut*
2″ 4H Silicon Carbide
Item No.TypeOrientationThicknessGradeMicropipe DensitySurfaceUsable area
 N-Type 
S4H-51-N-SIC-C0510-AC-D2″ 4H-N0°/4°±0.5°5~10mmD <100/cm2As-cut*
S4H-51-N-SIC-C1015-AC-D2″ 4H-N0°/4°±0.5°10~15mmD <100/cm2As-cut*
S4H-51-N-SIC-C0510-AC-C2″ 4H-N0°/4°±0.5°5~10mmC <50/cm2As-cut*
S4H-51-N-SIC-C1015-AC-C2″ 4H-N0°/4°±0.5°10~15mmC <50/cm2As-cut*
2″ 6H Silicon Carbide
Item No.TypeOrientationThicknessGradeMicropipe DensitySurfaceUsable area
 N-Type 
S6H-51-N-SIC-C0510-AC-D2″ 6H-N0°/4°±0.5°5~10mmD <100/cm2As-cut*
S6H-51-N-SIC-C1015-AC-D2″ 6H-N0°/4°±0.5°10~15mmD <100/cm2As-cut*
S6H-51-N-SIC-C0510-AC-C2″ 6H-N0°/4°±0.5°5~10mmC <50/cm2As-cut*
S6H-51-N-SIC-C1015-AC-C2″ 6H-N0°/4°±0.5°10~15mmC <50/cm2As-cut*
 SEMI-INSULATING 
S6H-51-SI-SIC-C0510-AC-D2″ 6H-SI0°/4°±0.5°5~10mmD <100/cm2As-cut*
S6H-51-SI-SIC-C1015-AC-D2″ 6H-SI0°/4°±0.5°10~15mmD <100/cm2As-cut*

 

2. About SiC Ingot Progress

At present, the standard method for preparing SiC ingots in the world is the seed crystal sublimation method. The principle is to use induction or resistance heating to heat the closed crucible system, place the solid mixture as the growth source at the bottom of the crucible at a higher temperature, and fix the seed crystal on the top of the crucible at a lower temperature. The source for SiC ingot growth sublimates and decomposes at low pressure and high temperature to produce gaseous substances, driven by the pressure gradient formed by the temperature gradient between the growth source and the seed crystal. These gaseous substances are naturally transported to the low temperature seed crystal position, and SiC wafer ingot growth due to the generation of supersaturation.

For more information, please contact us email at [email protected] and [email protected].

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