SiC Ingots

SiC Ingots

PAM-XIAMEN offers n type SiC ingots with 4H or 6H polytype in on axis or 4deg.off axis in different quality grades for researcher and industry manufacturers, size from 2” to 4”, thickness from5-10mm to >15mm.   

4″ 4H Silicon Carbide
Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area
            N-Type 
S4H-100-N-SIC-C0510-AC-D 4″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut *
S4H-100-N-SIC-C1015-AC-C 4″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut *
3″ 4H Silicon Carbide
Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area
           N-Type 
S4H-76-N-SIC-C0510-AC-D 3″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut *
S4H-76-N-SIC-C1015-AC-D 3″ 4H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut *
S4H-76-N-SIC-C0510-AC-C 3″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut *
S4H-76-N-SIC-C1015-AC-C 3″ 4H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut *
2″ 4H Silicon Carbide
Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area
  N-Type 
S4H-51-N-SIC-C0510-AC-D 2″ 4H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut *
S4H-51-N-SIC-C1015-AC-D 2″ 4H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut *
S4H-51-N-SIC-C0510-AC-C 2″ 4H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut *
S4H-51-N-SIC-C1015-AC-C 2″ 4H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut *
2″ 6H Silicon Carbide
Item No. Type Orientation Thickness Grade Micropipe Density Surface Usable area
  N-Type 
S6H-51-N-SIC-C0510-AC-D 2″ 6H-N 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut *
S6H-51-N-SIC-C1015-AC-D 2″ 6H-N 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut *
S6H-51-N-SIC-C0510-AC-C 2″ 6H-N 0°/4°±0.5° 5~10mm C  <50/cm2 As-cut *
S6H-51-N-SIC-C1015-AC-C 2″ 6H-N 0°/4°±0.5° 10~15mm C  <50/cm2 As-cut *
  SEMI-INSULATING 
S6H-51-SI-SIC-C0510-AC-D 2″ 6H-SI 0°/4°±0.5° 5~10mm D  <100/cm2 As-cut *
S6H-51-SI-SIC-C1015-AC-D 2″ 6H-SI 0°/4°±0.5° 10~15mm D  <100/cm2 As-cut *
2018-08-07

Share this post

Related Posts

4″ Silicon EPI Wafer-2

PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 37 p- Si:B 35±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 16.5 n- Si:P 12.5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45 p- Si:B 13±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 7±1 n- Si:P 12±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 45 p- Si:B 14.5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 7 n- Si:P 12±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.002-0.005 P/E 88 p- Si:B 80.5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.002-0.005 P/E 88 n- Si:P 27±10% P/N/N+ 4″Øx380μm n- Si:As[111] 0.002-0.005 P/E 105 p- Si:B 0.0035±10% P/N/N+ 4″Øx380μm n- Si:As[111] 0.002-0.005 P/E 26 n- Si:P 5±10% P/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10.15 n- Si:P 3.8±0.5 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 6.8±0.8 n- Si:P 0.55±0.15 N/N/N+ 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 16.5 n- Si:P 35 ±10% N/N+ 4″Øx508μm n- Si:As[111] 0.002-0.005 P/E 19±1.3 n- Si:P 25±5 N/N/N+ 4″Øx508μm n- Si:As[111] 0.002-0.005 P/E 54.5±3.6 n- Si:P 4.4 N/N/N+ 4″Øx380μm n- Si:As[111] 0.001-0.005 P/EOx 20 n- Si:P 270 ±10% N/N+ 4″Øx400μm n- Si:As[111] 0.001-0.005 P/E 20 n- Si:P 0.09 ±10% N/N+ 4″Øx400μm n- [...]

2019-03-08meta-author
Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing

In this study, a nano-columnar low-temperature (LT) GaN buffer was used to reduce the wafer bowing of a GaN layer grown on a sapphire substrate. A significant reduction in the extent of wafer bowing was observed for the GaN layer for the preserved nano-columnar LT GaN [...]

2013-09-13meta-author
SiC and Si Quantum Dots Co-Precipitated Si-Rich SiC Film with n- and p-Type Dopants Grown by Hydrogen-Free PECVD

The co-precipitation of Si and SiC quantum dots (QDs) in Si-rich silicon carbide (Si-rich SiC) films with n-type and p-type dopants is preliminarily demonstrated with low-temperature plasma enhanced chemical vapor deposition and high-temperature annealing. With specific hydrogen-free recipe of argon diluted silane (SiH4) and [...]

2019-12-23meta-author
La3Ga5SiO14 crystals

PAM XIAMEN offers La3Ga5SiO14 crystals. Langasite- La3Ga5SiO14 crystals is a new piezoelecrictric materials with the value of electromechanical coupling coefficient, which is, intermediate between this coefficient of a quartz crystal and that of lithium tantalate. Characteristics\Crystals Quartz, SiO2 Langasite, La3Ga5SiO14 Lithium tetraborate, Li2B2O3 Lithium tantalate, LiTaO3 Electromechanical Coupling Factor [...]

2019-05-07meta-author
SOI Wafer (Silicon On Insulator)

PAM XIAMEN offers SOI Wafer (Silicon On Insulator). SOI Wafer: 10x10x0.625mm, 2 .5µm (P-doped) +1.0 SiO2 +625um Si (P-type /Boron doped) SOI Wafer: 6″, 2.5 µm (P-doped ) + 1.0 SiO2 + 625um Si (P-type /Boron doped) For more information, please visit our website: [...]

2019-05-16meta-author
Dislocations in Gan Grown on Silicon

In order to understand dislocations in GaN grown on silicon using metal organic chemical vapor deposition (MOCVD), two samples with different film thickness were grown. The distribution of dislocations and its influence on epitaxial layer were studied. Wet etching can effectively reveal the dislocations in GaN, [...]

2013-09-05meta-author