SiC-On-SiC Epi Wafer For Pin-Diodes

SiC-On-SiC Epi Wafer For Pin-Diodes

SiC-On-SiC Epi Wafer For Pin-Diodes

PAM-XIAMEN offers SiC-on-SiC epi wafer for pin-diodes as follows:

pin-diodes structure 1: SiC-on-SiC epi-wafer  PAM060320-SIC

p+[Al]: 5 µm, gradient doping, Na-Nd = 5*10^18 – 1*10^20 ± 50% cm-3
p[Al]: 20 µm, Na-Nd = 4.9*10^15 cm-3
n+[N]: 2 µm, Na-Nd = 5*10^18 ± 25% cm-3
substrate: 4H, ∅ 4″ (100 mm), h = 350 µm, ρv = 0.012-0.0025 Ohm*cm; 4° off to <11-20>; MPD: 0 (high purity) cm-2

pin-diodes structure 2: SiC-on-SiC epi-wafer  PAM060420-SIC

p+[Al]: 5 µm, gradient doping, Na-Nd = 5*10^18 – 1*10^20 ± 50% cm-3
p[Al]: 20 µm, Na-Nd = 4.9*10^15 cm-3
n+[N]: 2 µm, Na-Nd = 5*10^18 ± 25% cm-3
substrate: 4H, ∅ 4″ (100 mm), h = 350 µm, ρv = 0.012-0.0025 Ohm*cm; 4° off to <11-20>; MPD: <=5 cm-2

SiC-On-SiC Epi Wafer For Pin-Diodes

SiC-On-SiC Epi Wafer For Pin-Diodes

 

 

 

 

 

 

 

 

 

 

 

 

 

 

About SiC PIN Diodes

SiC pin diodes have a switching speed of 2 to 3 orders of magnitude higher than that of Si, high junction temperature tolerance, high current density, and higher power density.

① The breakdown electric field is increased by nearly an order of magnitude: thinner and higher doping concentration barrier layers can be used in the design;

②Three times the height of the wide band gap: makes it have a higher working temperature and higher radiation resistance; but this also makes its built-in electric potential three times higher than that of Si;

③The thermal conductivity(4.9K/W) is three times higher than that of Si: it makes the heat dissipation performance higher and can achieve higher power.

SiC pin diode has a very small reverse recovery charge QRR compared with Si-based diodes at the same level. The main reasons are as follows:

The voltage blocking layer is thinned by tens of times, and the doping concentration is higher than several tens of times, which makes the minority carrier charge in the intrinsic layer significantly reduced;

The carrier life required for these thinner voltage barriers is shorter than that of Si at more than 10 times; and the SiC pin diodes have a very high temperature forward voltage drop when the temperature changes.

powerwaywafer

For more information, please contact us email at [email protected] and [email protected]

 

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