SiC-On-SiC Epi Wafer For Pin-Diodes

SiC-On-SiC Epi Wafer For Pin-Diodes

PAM-XIAMEN offers SiC-on-SiC epi wafer for pin-diodes as follows:

pin-diodes structure 1: SiC-on-SiC epi-wafer  PAM060320-SIC
p+[Al]: 5 µm, gradient doping, Na-Nd = 5*10^18 – 1*10^20 ± 50% cm-3
p[Al]: 20 µm, Na-Nd = 4.9*10^15 cm-3
n+[N]: 2 µm, Na-Nd = 5*10^18 ± 25% cm-3
substrate: 4H, ∅ 4″ (100 mm), h = 350 µm, ρv = 0.012-0.0025 Ohm*cm; 4° off to <11-20>; MPD: 0 (high purity) cm-2

pin-diodes structure 2: SiC-on-SiC epi-wafer  PAM060420-SIC
p+[Al]: 5 µm, gradient doping, Na-Nd = 5*10^18 – 1*10^20 ± 50% cm-3
p[Al]: 20 µm, Na-Nd = 4.9*10^15 cm-3
n+[N]: 2 µm, Na-Nd = 5*10^18 ± 25% cm-3
substrate: 4H, ∅ 4″ (100 mm), h = 350 µm, ρv = 0.012-0.0025 Ohm*cm; 4° off to <11-20>; MPD: <=5 cm-2

SiC-On-SiC Epi Wafer For Pin-Diodes

SiC-On-SiC Epi Wafer For Pin-Diodes

 

 

 

 

 

 

 

 

 

 

 

 

 

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

 

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