SiC Substrate

SiC Substrate

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC wafer processing technology.

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  • Description

Product Description

PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiC substrate,Which is applied in GaN epitaxy device,power devices,high-temperature device and optoelectronic Devices.  As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,we are devoted to continuously improve the quality of currently substrates and develop large size substrates.

Here shows detail specification:

SILICON CARBIDE MATERIAL PROPERTIES

Polytype Single Crystal 4H Single Crystal 6H
Lattice Parameters a=3.076 Å a=3.073 Å
c=10.053 Å c=15.117 Å
Stacking Sequence ABCB ABCACB
Band-gap 3.26 eV 3.03 eV
Density 3.21 · 103 kg/m3 3.21 · 103 kg/m3
Therm. Expansion Coefficient 4-5×10-6/K 4-5×10-6/K
Refraction Index no = 2.719 no = 2.707
ne = 2.777 ne = 2.755
Dielectric Constant 9.6 9.66
Thermal Conductivity 490 W/mK 490 W/mK
Break-Down Electrical Field 2-4 · 108 V/m 2-4 · 108 V/m
Saturation Drift Velocity 2.0 · 105 m/s 2.0 · 105 m/s
Electron Mobility 800 cm2/V·S 400 cm2/V·S
hole Mobility 115 cm2/V·S 90 cm2/V·S
Mohs Hardness ~9 ~9

6H N-TYPE SIC, 2″WAFER SPECIFICATION

SUBSTRATE PROPERTY S6H-51-N-PWAM-250 S6H-51-N-PWAM-330 S6H-51-N-PWAM-430
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   6H SiC Substrate
Polytype 6H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm                  (330 ± 25) μm                  (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.02 ~ 0.1 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 3.5° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70 mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm

 

4H SEMI-INSULATING SIC, 2″WAFER SPECIFICATION

(High-Purity Semi-Insulating(HPSISiC substrate is available)

SUBSTRATE PROPERTY S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430
Description A/B Production Grade  C/D Research Grade  D Dummy Grade  4H SEMI Substrate
Polytype 4H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm
Resistivity (RT) >1E5 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
Surface Orientation
On axis                         <0001>± 0.5°
Off axis                         3.5° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70 mm
Secondary flat orientation              Si-face:90° cw. from orientation flat ± 5°
                                                   C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm

4H N-type or Semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION : Thickness:330μm/430μm

4H N-type or Semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION: Thickness:330μm/430μm

4H N-TYPE SIC, 2″WAFER SPECIFICATION

SUBSTRATE PROPERTY S4H-51-N-PWAM-330              S4H-51-N-PWAM-430
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype 4H
Diameter (50.8 ± 0.38) mm
Thickness (250 ± 25) μm                     (330 ± 25) μm                (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.012 – 0.0028 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation Parallel {1-100} ± 5°
Primary flat length 16.00 ± 1.70) mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 8.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Usable area ≥ 90 %
Edge exclusion 1 mm

 

4H N-TYPE SIC, 3″WAFER  SPECIFICATION

SUBSTRATE PROPERTY S4H-76-N-PWAM-330               S4H-76-N-PWAM-430
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype 4H
Diameter (76.2 ± 0.38) mm
Thickness      (350 ± 25) μm                            (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.015 – 0.028Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
TTV/Bow /Warp <25μm
Surface Orientation
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation <11-20>±5.0°
Primary flat length 22.22 mm±3.17mm
0.875″±0.125″
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 11.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Scratch None
Usable area ≥ 90 %
Edge exclusion 2mm

 

4H SEMI-INSULATING SIC, 3″WAFER  SPECIFICATION

(High Purity Semi-Insulating(HPSISiC substrate is available)

SUBSTRATE PROPERTY S4H-76-N-PWAM-330               S4H-76-N-PWAM-430
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype 4H
Diameter (76.2 ± 0.38) mm
Thickness      (350 ± 25) μm                            (430 ± 25) μm
Carrier Type semi-insulating
Dopant V
Resistivity (RT) >1E5 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
TTV/Bow /Warp <25μm
Surface Orientation
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation <11-20>±5.0°
Primary flat length 22.22 mm±3.17mm
0.875″±0.125″
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 11.00 ± 1.70 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Scratch None
Usable area ≥ 90 %
Edge exclusion 2mm

 

4H N-TYPE SIC, 4″WAFER  SPECIFICATION

SUBSTRATE PROPERTY S4H-100-N-PWAM-330               S4H-100-N-PWAM-430
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype 4H
Diameter (100.8 ± 0.38) mm
Thickness      (350 ± 25) μm                            (430 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.015 – 0.028Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A+≤1cm-2  A≤10cm-2   B≤30cm-2  C≤50cm-2  D≤100cm-2
TTV/Bow /Warp <45μm
Surface Orientation
On axis <0001>± 0.5°
Off axis 4°or 8° toward <11-20>± 0.5°
Primary flat orientation <11-20>±5.0°
Primary flat length 32.50 mm±2.00mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 18.00 ± 2.00 mm
Surface Finish Single or double face polished
Packaging Single wafer box or multi wafer box
Scratch None
Usable area ≥ 90 %
Edge exclusion 2mm

4H N-type or semi-insulating SIC,5mm*5mm, 10mm*10mm WAFER SPECIFICATION: Thickness:330μm/430μm

4H N-type or semi-insulating SIC,15mm*15mm, 20mm*20mm WAFER SPECIFICATION:Thickness:330μm/430μm

a-plane SiC Wafer, size: 40mm*10mm,30mm*10mm,20mm*10mm,10mm*10mm,specs below:

6H/4H N type                   Thickness:330μm/430μm or custom

6H/4H Semi-insulating     Thickness:330μm/430μm or custom

4H SIC,SEMI-INSULATING, 4″WAFER  SPECIFICATION

(High-Purity Semi-Insulating(HPSISiC substrate is available)

SUBSTRATE PROPERTY S4H-100-SI-PWAM-350               S4H-100-SI-PWAM-500
Description A/B Production Grade  C/D Research Grade  D Dummy Grade   4H SiC Substrate
Polytype 4H
Diameter (100 ± 0.5) mm
Thickness      (350 ± 25) μm                            (500 ± 25) μm
Carrier Type Semi-insulating
Dopant V
Resistivity (RT) >1E5 Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM A<30 arcsec                   B/C/D <50 arcsec
Micropipe Density A≤5cm-2   B≤15cm-2  C≤50cm-2  D≤100cm-2
TTV/Bow /Warp TTV<10μm;TTV< 25μm;WARP<45μm
Surface Orientation
On axis <0001>± 0.5°
Off axis None
Primary flat orientation <11-20>±5.0°
Primary flat length 32.50 mm±2.00mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length 18.00 ± 2.00 mm
Surface Finish Double face polished
Packaging Single wafer box or multi wafer box
Scratches <8 scratches to 1 x wafer diameter with total cumulative length
Cracks None
Usable area ≥ 90 %
Edge exclusion 2mm

 

4H SIC,N-TYPE , 6″WAFER  SPECIFICATION

SUBSTRATE PROPERTY S4H-150-N-PWAM-350      
Description Dummy Grade 2
Polytype 4H
Diameter (150 ± 0.2) mm
Thickness      (350 ± 25) μm
Carrier Type n-type
Dopant Nitrogen
Resistivity (RT) 0.015 – 0.028Ω·cm
Surface Roughness < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
Micropipe Density N/A
TTV ≤30μm
Bow ≤120μm
Warp ≤150μm
Surface Orientation
Off axis 4° toward <11-20>± 0.5°
Primary flat orientation <10-10>±5.0°
Primary flat length 47.50 mm±2.50mm
Surface Finish Double face polished
Edge exclusion 3mm
Packaging Single wafer box or multi wafer box

Please see below sub-catalogue:

6H n type SiC
4H N Type SiC
4H Semi-insulating SiC
SiC Ingots
Lapped Wafers
Polishing Wafer

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