SiC Wafer (4H & 6H) & SiC Film(3C)

PAM XIAMEN offers SiC Wafer (4H & 6H) & SiC Film(3C).

The physical and electronic properties of SiC make it the foremost semiconductor material for short wavelength optoelectronic, high temperature, radiation resistant, and high-power/high-frequency electronic devices.

SiC (4H)

SiC – 4H (0001), 10x10x0.3 mm , Si Face, 1SP – SC4HZ1010033S1

SiC – 4H (0001), 5x5x0.3 mm , one side polished

SiC – 4H (0001), 5x5x0.33 mm , two sides polished

SiC – 4H (0001) 3″ dia. x0.35 mm th., two sides polished (Si side EPI- polished)

SiC – 4H (0001) 4″ dia. x0.5 mm th.,N-type , two sides polished (Si side EPI- polished)

SiC – 4H (0001), 1″ dia. x0.26 mm th., one side polished

SiC – 4H (0001), 2″ dia. x0.33 mm th., One side polished

SiC – 4H (0001), 2″ dia. x0.33 mm th., two sides polished

SiC – 4H (0001), 3″ dia. x0.40 mm th., two sides polished,”Si” face EPI ready

SiC (6H)

SiC – 6H (0001) 1″ dia. x0.26 mm th., one side polished

SiC – 6H (0001) 8mm dia. x 0.3 mm th., one side polished

SiC – 6H (0001), 2″ dia. x 0.25±0.05 mm thick,one side polished,Semi-insulating

SiC – 6H (0001), 2″ dia. x 0.33 mm thick,one side polished

SiC – 6H (0001), 2″ dia. x0.26 mm thick., one side polished

SiC – 6H (0001)/<11-20>^45 degree , 2″ dia. x0.3 mm th., one side polished

SiC – 6H (0001), 10x10x0.33 mm , two sides polished

SiC – 6H (0001), 10x10x0.3 mm , one side polished

SiC – 6H (0001), 5x5x0.3-0.33 mm, 1 SP

SiC – 6H (0001), 5x5x0.33 mm, 2 SP

SiC – 6H (0001), 1/4″x1/4″x0.26 mm , two sides polished (2sp)

SiC – 6H (0001), with 3.5 degree off , 5x5x0.26 mm, 1SP

SiC – 6H (0001), 10x10x0.26 mm , two sides polished

SiC Film(3C) on Si wafer

4″ SiC-3C N type Film and CMP on both sides of Silicon (100) N-type Wafer after epitaxy growth, 3.2 micron film Thickness after polishing

4″ SiC-3C N type Film and CMP on both sides of Silicon (100) N-type Wafer after epitaxy growth, Film:1.3 micron

4″SiC-3C Undoped Epi Film as CMP on both sides of Silicon (100) Wafer after epitaxy growth, 2.2 micron Thick,

4″SiC-3C Undoped Epi Film as CMP on both sides of Silicon (100) Wafer after epitaxy growth, 2.3 micron Thick,

SiC-3C Undoped Epi Film as CMP on both sides of Silicon (100) Wafer after epitaxy growth, 2.2 micron Thick, 10x10x0.525 mm

SiC-3C Undoped Epi Film as CMP on both sides of Silicon (100) Wafer after epitaxy growth, 2.2 micron Thick, SiC-3CP-a-4-013, 5x5x0.525mm-1

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

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