SiC(Silicon Carbide) Boule Crystal

SiC(Silicon Carbide) Boule Crystal

PAM-XIAMEN offers SiC(Silicon Carbide) Boule Crystal with available size:2”,3”,4”,6” with two available length:5~10mm or 10~15mm. Fix size is workable such as 10mm, please see below specification of 4”size and 6”size:

No.1: 4″ SiC Boule Crystal, Production Grade
Polytype: Production- 4H
Diameter: Production-100,0 mm+/-0,2 mm
Carrier type: Production-N-type
Resistivity: Production-0,015~0,028 Ohm-cm
Orientation: Production–4,0˚±0,5˚
Primary flat orientation: Production {10-10}±5,0˚
Primary Flat Length: Production 32,5 mm±2,5 mm
Secondary flat orientation (5%): Production-Si face 90˚ CCW from orientation flat/ C face 90˚ CCW from orientation flat
Secondary Flat Length: Production-18,0 mm±2,0mm.
Cracks by high intensity light: Production- ≤1 mm each with radial depth
Hex Plates by high intensity light: Production <5% (Cumulative area <5%)
Micropipe density: Production-<5 /сm2
Option1:Thickness: 10~15mm
Option2:Thickness: 5~10mm

No.2: 4″ SiC Boule Crystal, Dummy Grade
Polytype: Dummy- 4H
Diameter: -100,0 mm+/-0,2 mm
Carrier type: N-type
Resistivity: -0,015~0,028 Ohm-cm
Orientation:-4,0˚±0,5˚
Primary flat orientation:{10-10}±5,0˚
Primary Flat Length:32,5 mm±2,5 mm
Secondary flat orientation (5%):Si face 90˚ CCW from orientation flat/ C face 90˚ CCW from orientation flat
Secondary Flat Length: -18,0 mm±2,0mm.
Cracks by high intensity light:- 3mm ≤4 mm in radial depth
Hex Plates by high intensity light: <10% (Cumulative area <10%)
Micropipe density:<5 0/сm2
Option1:Thickness: 10~15mm
Option2:Thickness: 5~10mm

No.3: 6″ SiC Boule Crystal,Production Grade
Polytype: Production- 4H
Diameter: Production-150,0 mm+/-0,2 mm
Carrier type: Production-N-type
Resistivity: Production-0,015~0,028 Ohm-cm
Orientation: Production–4,0˚±0,5˚
Primary flat orientation: Production {10-10}±5,0˚
Primary Flat Length: Production 47,5 mm±2,5 mm
Secondary flat orientation: N/A
Secondary Flat Length: N/A
Cracks by high intensity light: Production- ≤1 mm each with radial depth
Hex Plates by high intensity light: Production <5% (Cumulative area <5%)
Micropipe density: Production-<5 /сm2
Option1:Thickness: 10~15mm
Option2:Thickness: 5~10mm

No.4: 6″ SiC Boule Crystal,Dummy Grade
Polytype: Dummy – 4H
Diameter: 150,0 mm+/-0,2 mm
Carrier type: N-type
Resistivity: 0,015~0,028 Ohm-cm
Orientation: 4,0˚±0,5˚
Primary flat orientation: {10-10}±5,0˚
Primary Flat Length:47,5 mm±2,5 mm
Secondary flat orientation: N/A
Secondary Flat Length: N/A
Cracks by high intensity light:3 mm
≤4 mm in radial depth
Hex Plates by high intensity light: <10% (Cumulative area <10%)
Micropipe density: -<50 /сm2
Option1:Thickness: 10~15mm
Option2:Thickness: 5~10mm

 

SiC(Silicon Carbide) Boule Crystal

SiC(Silicon Carbide) Boule Crystal

 

 

 

 

 

 

 

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

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