Silicon Block size 5x20mm

Silicon Block size 5x20mm

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LD Bare Bar for [email protected] 2mm

PAM XIAMEN offers LD Bare Bar for [email protected] 2mm. Brand: PAM-XIAMEN Wavelength: 940nm Filling Factor: 80% Output Power: 600W Cavity Length:2mm For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] Found in 1990, Xiamen Powerway Advanced Material Co., [...]

2019-05-09meta-author
50.8mm (2 Inch) Silicon Wafers-2

PAM XIAMEN offers 50.8mm Si wafers. Please send us email at [email protected]  if you need other specs and quantity. Item Material Orient. Diam (mm) Thck (μm) Surf. Resistivity Ωcm Comment PAM2005 Intrinsic Si:- [100] 2″ 280 ±10 P/E FZ >8,500 SEMI Prime, 1Flat, TTV<5μm, hard cst PAM2006 Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, hard cst PAM2007 Intrinsic Si:- [100] 2″ 300 P/E FZ 5,000–10,000 SEMI Prime, 1Flat, in hard cassettes of 2 & 5 wafers PAM2008 Intrinsic Si:- [111] [...]

2019-02-18meta-author
4″ Silicon EPI Wafer-4

PAM XIAMEN offers 4″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 600 ±10% N/N+ 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P 340 ±10% N/N+ 4″Øx380μm n- Si:As[111] 0.004-0.008 P/EOx 43 n- Si:P >200 N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 50 n- Si:P 36±4 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 15 n- Si:P 5.4±0.7 N/N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 75 n- Si:P 66 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 78 n- Si:P 25 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/EOx 78 n- Si:P 20 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.001-0.005 P/E 80 n- Si:P 17.5 ±10% N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80 n- Si:P 60±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±1 N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 80 n- Si:P 70±10% N/N/N+ 4″Øx525μm n- Si:As[111] 0.0010-0.0035 P/E 10 n- Si:P 2±1 N/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 22.5 p- Si:B 15±10% P/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 15 n- Si:P 6±0.9 P/N/N+ 4″Øx525μm n- Si:Sb[111] 0.008-0.020 P/E 38 p- [...]

2019-03-08meta-author
Si-based GaN PIN Photodetector Structure

III-nitrides are suitable for working in extreme conditions due to their excellent radiation hardness and high temperature properties. Therein, the fabrication of various types of GaN-based photodetectors (PDs) has been reported over the past decade. In addition, the high conductivity of silicon substrate has [...]

2022-07-29meta-author
BN (h) – 2D crystal

PAM XIAMEN offers BN (h) – 2D crystal. Natural Boron Nitride Single Crystal, 0.6-1.0 mm Hexagonal boron nitride (h-BN) single crystals are ideal as a substrate for 2D materials. h-BN crystals are highly crystalline display strong Raman peak at 1566 cm-1 with FWHM less than [...]

2019-04-17meta-author
How Silicon Carbide Wafers Are Made?

Silicon carbide (SiC) is a compound semiconductor material composed of carbon and silicon elements, and is called wide-bandgap semiconductor material because the band gap is greater than 2.2eV. PAM-XIAMEN can provide N-type and semi-insulating SiC wafers. More specifications of SiC wafer please visit https://www.powerwaywafer.com/sic-wafer. How SiC wafers [...]

2022-08-17meta-author