Silicon Block size 5x20mm

PAM XIAMEN offers Silicon Block size 5x20mm

Si pieces
Size: 5x20mm, thickness 1mm
FZ
R>5000 ohm.cm

For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2020-04-17

Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics

Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics LED applications will become the driving force of the bulk GaN market, surpassing established laser diode (LD) and emerging power electronics segments. However, major changes could occur if 4″ bulk GaN price gets [...]

2013-11-22meta-author

Passively Q-switched and mode-locked diode-pumped Nd:YVO4 laser with LT-GaAs output coupler

We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was [...]

2013-11-19meta-author LT-GaAs, Nd:YVO4, QML

Borofloat 33 – Borosilicate Float Glass from SCHOTT

PAM XIAMEN offers Borosilicate Float Glass from SCHOTT. We have a large selection of Schott Borofloat 33 glass wafers in all sizes. We have borofloat glass as thin as 100 microns. Borofloat 33 is the sanme as Pyrex 7740 and has the same anondic [...]

2019-02-27meta-author

2″ Silicon Wafer-7

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 2″ 280 P/P 1-5 SEMI Prime, Si:P [100-6°] 2″ 300 P/E 1-5 SEMI Prime, n-type Si:P [100] 2″ 350 P/P 1-50 Test, Polished but dirty and scratched. Can be re-polished for additional fee, NO Flats n-type Si:P [100] ±1° 2″ 400 ±15 P/P 1-10 SEMI Prime, TTV<3μm, Empak cst n-type Si:P [100] 2″ 3175 P/E 1-3 Prime, NO Flats, Individual cst n-type Si:P [100] ±1.0° 2″ 6000 P/E 1-10 SEMI Prime, , Individual cst n-type Si:P [100] 2″ 300 P/P 0.8-1.0 SEMI Prime, n-type Si:Sb [100] 2″ 300 P/E 0.01-0.02 SEMI Prime, n-type Si:Sb [100] 2″ 500 P/P 0.01-0.02 SEMI Prime, , in [...]

2019-03-07meta-author

GaN Template on Sapphire& Silicon

PAM XIAMEN offers GaN Template on Sapphire& Silicon. No.1: Doped GaN Template on Sapphire 1-1GaN (0001) Template( N+ ,Si-doped) on Sapphire , 2″x 5um,1sp 1-2GaN (0001) Template( N+ ,Si-doped) on Sapphire, 2″x 5um,2sp 1-3GaN (0001) Template( Semi-insulating ,Fe-doped) on Sapphire, 2″x 2um,1sp 1-4Si-doped GaN [...]

2019-04-28meta-author

Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields

Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs [...]

2013-03-19meta-author

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Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
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Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

sales@powerwaywafer.com tech@powerwaywafer.com

Read More

Float-Zone Mono-Crystalline Silicon

PAM-XIAMEN can offer float zone silicon wafer, which is obtained by Float Zone method. Monocrystalline silicon rods is got through float zone growth, and then process the monocrystalline silicon rods into silicon wafers, called float zone silicon wafers. Since the zone-melted silicon wafer is not in contact with the quartz crucible during the floating zone silicon process, the silicon material is in a suspended state. Thereby, it is less polluted during the process of floating zone melting of silicon. The carbon content and oxygen content are lower, the impurities are less, and the resistivity is higher. It is suitable for the manufacture of power devices and certain high-voltage electronic devices.
Read More

Test Wafer Monitor Wafer Dummy Wafer

As a dummy wafer manufacturer, PAM-XIAMEN offers silicone dummy wafer / test wafer / monitor wafer, which is used in a production device to improve safety in the beginning of production process and are used for delivery check and evaluation of process form. As dummy silicon wafers are often used for experiment and test, size and thickness thereof are important factors in most occasions. 100mm, 150mm, 200mm, or 300mm dummy wafer is available.
Read More

Nanofabrication Photoresist

PAM-XIAMEN Offers photoresist plate with photoresist
Read More

Photo Mask

PAM-XIAMEN Offers Photomasks

A photo mask is a thin coating of masking material supported by a thicker substrate, and the masking material absorbs light to varying degrees and can be patterned with a custom design. The pattern is used to modulate light and transfer the pattern through the process of photolithography which is the fundamental process used to build almost all of today’s digital devices.
Read More

CdZnTe (CZT) Wafer

Cadmium Zinc Telluride (CdZnTe or CZT) is a new semiconductor, which enables to convert radiation to electron effectively, it is mainly used in infrared thin-film epitaxy substrate, X-ray detectors and Gamma-ray CdZnTe detectors.
Read More

Ge(Germanium) Single Crystals and Wafers

PAM-XIAMEN offers 2”, 3”, 4” and 6” germanium wafer, which is short for Ge wafer grown by VGF / LEC. Lightly doped P and N type Germanium wafer can be also used for Hall effect experiment. At room temperature, crystalline germanium is brittle and has little plasticity. Germanium has semiconductor properties. High-purity germanium is doped with trivalent elements (such as indium, gallium, boron) to obtain P-type germanium semiconductors; and pentavalent elements (such as antimony, arsenic, and phosphorus) are doped to obtain N-type germanium semiconductors. Germanium has good semiconductor properties, such as high electron mobility and high hole mobility.

Silicon Block size 5x20mm

Silicon Block size 5x20mm

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Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics

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Ge(Germanium) Single Crystals and Wafers