PAM XIAMEN offers Silicon Block size 5x20mm
Si pieces
Size: 5x20mm, thickness 1mm
FZ
R>5000 ohm.cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Silicon Block size 5x20mm
Si pieces
Size: 5x20mm, thickness 1mm
FZ
R>5000 ohm.cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Gallium Nitride (GaN) is the basic material of blue LED and has important applications in LED and ultraviolet laser. PAM-XIAMEN can epitaxially grow GaN wafers for LED and LD. For more wafer specification please visit:https://www.powerwaywafer.com/gan-wafer/epitaxial-wafer.html. How do we grow GaN LED epiwafer on sapphire? Please click [...]
PAM XIAMEN offers 6″ FZ Silicon Wafer-6 N Type/Phosphorus doped Orientation (111) Thickness 400±10μm Resistivity 2000-5000Ωcm Flat one 47.5 ± 2.5, <110> ±1° TTV≤15μm Bow/Warp ≤20μm FLATNESS(FPD)≤5μm Front Side: Chemical Mechanical Polished Back side: Damaged, with SiO2/Al2O3 Particle ≤10 @≥0.3㎛ For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers SiO2 (single crystal quartz). Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. Conversion from the three-index system to the four as [u ‘ v ‘ w ‘ ] —> [u v t w] is [...]
PAM XIAMEN offers LiF crystal. LiF (100) 10x10x1.0mm, 1SP LiF (100) 10x10x1.0mm, 2SP LiF (111) 10x10x1.0mm, 1SP LiF (111) 10x10x1.0mm, 2SP LiF (110) 10x10x1.0mm, 1SP We also can offer LiF polycrystal (PAM161011-LIF): Diameter=15mm Length=25mm Purity>99.99% For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com. Found in [...]
PAM XIAMEN offers Silicon Ingots. Material Description FZ 2″Ø×38mm ingot, p-type Si:B[100]±2º, Ro:~2,900Ohmcm FZ 2″Ø×(392+342+304+263+250+175)mm ingots, p-type Si:B[111]±2º, (2,000-5,000)Ohmcm FZ 2″Ø×(100+87+86+85+85+84)mm ingots, n-type Si:P[111], (2,000-4,000) {2,166-3,835} Ohmcm FZ 2″Ø×26mm ground ingot, n-type Si:P[111]±2º, (5,000-13,000)Ohmcm, MCC Lifetime>1,100μs FZ 2″Ø ingot Intrinsic Si:-[100], Ro: >20,000 Ohmcm, Ground, (6 ingots: 154mm, 117mm, 143mm, 100mm, 101mm, 100mm) FZ 2″Ø×(160+98)mm ingots, Intrinsic Si:-[111]±2º, Ro>12,000 [...]
PAM-XIAMEN offers (10-11) Plane N-GaN Freestanding GaN Substrate: Item PAM-FS-GAN(10-11)-N Dimension 5 x 10 mm2 or 5 x 20 mm2 Thickness 380+/-50um Orientation (10-11) plane off angle toward A-axis 0 ±0.5° (10-11) plane off angle toward C-axis -1 ±0.2° Conduction Type N-type / Si Doped Resistivity (300K) < 0.05 Ω·cm TTV ≤ 10 µm BOW BOW ≤ 10 µm Surface Roughness Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. Dislocation Density ≤ 5 x 10 6cm-2 Macro Defect Density 0 cm-2 Useable Area > 90% (edge exclusion) Package each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
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