PAM XIAMEN offers Silicon Block size 5x20mm
Si pieces
Size: 5x20mm, thickness 1mm
FZ
R>5000 ohm.cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers Silicon Block size 5x20mm
Si pieces
Size: 5x20mm, thickness 1mm
FZ
R>5000 ohm.cm
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Free-Standing & Bulk GaN Substrates for Laser Diode, LED and Power Electronics LED applications will become the driving force of the bulk GaN market, surpassing established laser diode (LD) and emerging power electronics segments. However, major changes could occur if 4″ bulk GaN price gets [...]
We have demonstrated an efficient and compact passively Q-switched and mode-locked (QML) 1064 nm Nd:YVO4 laser by using a low temperature grown GaAs (LT-GaAs) saturable absorber as well as an output coupler. Stable QML with envelope duration as short as 10 ns and Q-switched repetition rate of 36 kHz was [...]
PAM XIAMEN offers Borosilicate Float Glass from SCHOTT. We have a large selection of Schott Borofloat 33 glass wafers in all sizes. We have borofloat glass as thin as 100 microns. Borofloat 33 is the sanme as Pyrex 7740 and has the same anondic [...]
PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 2″ 280 P/P 1-5 SEMI Prime, Si:P [100-6°] 2″ 300 P/E 1-5 SEMI Prime, n-type Si:P [100] 2″ 350 P/P 1-50 Test, Polished but dirty and scratched. Can be re-polished for additional fee, NO Flats n-type Si:P [100] ±1° 2″ 400 ±15 P/P 1-10 SEMI Prime, TTV<3μm, Empak cst n-type Si:P [100] 2″ 3175 P/E 1-3 Prime, NO Flats, Individual cst n-type Si:P [100] ±1.0° 2″ 6000 P/E 1-10 SEMI Prime, , Individual cst n-type Si:P [100] 2″ 300 P/P 0.8-1.0 SEMI Prime, n-type Si:Sb [100] 2″ 300 P/E 0.01-0.02 SEMI Prime, n-type Si:Sb [100] 2″ 500 P/P 0.01-0.02 SEMI Prime, , in [...]
PAM XIAMEN offers GaN Template on Sapphire& Silicon. No.1: Doped GaN Template on Sapphire 1-1GaN (0001) Template( N+ ,Si-doped) on Sapphire , 2″x 5um,1sp 1-2GaN (0001) Template( N+ ,Si-doped) on Sapphire, 2″x 5um,2sp 1-3GaN (0001) Template( Semi-insulating ,Fe-doped) on Sapphire, 2″x 2um,1sp 1-4Si-doped GaN [...]
Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs [...]