Silicon Dioxide Wafer

Silicon Dioxide Wafer

Silicon dioxide wafer can be offered by PAM-XIAMEN, which is single / double side polished and one-sided / double-sided oxidation in various sizes. In the integrated circuit process, oxidation is an indispensable process technology. Since early people discovered that the diffusion rate of impurity elements such as boron, phosphorus, arsenic, and antimony in SiO2 is much slower than the diffusion rate in Si, SiO2 film has been widely used as a mask for selective diffusion in device production, and has promoted the emergence of silicon planar technology. At the same time, the SiO2 film grown on the Si surface not only has good adhesion to Si, but also has very stable chemical properties and electrical insulation. Therefore, thermal oxide silicon wafer plays an extremely important role in integrated circuits. The specifications of SiO2 wafers you can buy are as following:

Silicon Dioxide Wafer

1. Specifications of Silicon Dioxide Wafer

No. Size (inch) Type Orientation Thickness(um) SiO2 (nm)  Resistivity Range (ohm-cm) Surface Processed
PAM-01 1 P 100 525±10 330nm 0-0.005 1 side polished, 2 sides oxidation
PAM-02 2 P 100 500±20 3um 1-10 1 side polished, 2 sides oxidation
PAM-04 2 N 100 285±15 1um 1-10 2 sides polished, 2 sides oxidation
PAM-09 3 FZ 100 400±10 2um 10000-20000 1 side polished, 2 sides oxidation
PAM-015 4 / 100 400±10 2um 10000-20000 1 side polished, 2 sides oxidation
PAM-025 4 P 100 400±10 500nm 3000-5000 1 side polished, 1 side oxidation
PAM-035 4 N 100 500±25 270/320nm 0.01-0.05 1 side polished, 2 sides oxidation
PAM-036 4 P 100 700±10 300-310nm 0.001-0.002 1 side polished, 2 sides oxidation
PAM-037 4 P 100 700±10 305±5nm 0-0.1 1 side polished, 2 sides oxidation
PAM-052 4 P 100 500±20 150nm 0-0.0015 1 side polished, 2 sides oxidation
PAM-054 4 P 111 500±25 50-80nm 0-0.05 1 side polished, 2 sides oxidation
PAM-056 6 N 100 510±15 200nm 6000-10000 1 side polished, 2 sides oxidation
PAM-057 6 P 111 645±25 500nm 5-25 1 side polished, 2 sides oxidation
PAM-059 6 / 100 650±25 500nm 5000-10000 2 sides polished, 1 side oxidation
PAM-060 6 P 100 675±25 500nm 0.5-100 1 side polished, 2 sides oxidation
PAM-061 6 / 100 625±25 2um 1-100 1 side polished, 2 sides oxidation
PAM-062 6 N 100 650±50 2.8um 0.1-100 1 side polished, 2 sides oxidation
PAM-066 8 P 100 720±25 100-500nm 0.005-100 1 side polished, 2 sides oxidation
PAM-070 5 N 100 525±15 300nm 0-0.005 1 side polished, 1 side oxidation
PAM-084 6 P 100 675±25 8um±5% 10-20 1 side polished, 2 sides oxidation
PAM-086 12 P 100 650±50 100-500nm 1-100 2 sides polished, 2 sides oxidation

2. Silicon Wafer Oxidation Process

The oxidation process of silicon dioxide on silicon wafer is a surface process, that is, the oxidant reacts with Si atoms on the surface of the silicon wafer. When the SiO2 layer formed on the silicon surface prevents the oxidant from contacting directly with Si, the oxidant must diffuse through the SiO2. When the layer reaches SiO2, a silicon dioxide wafer interface reacts with Si atoms to form a new SiO2 layer, making the SiO2 film thicker, and at the same time, the SiO2-Si interface advances into the Si.

3. Influencing Factors of Silicon Wafer Oxide Layer Growth Rate

There are many factors, such as oxidation source, atomic density, temperature and etc. will affect silicon wafer thermal oxide growth rate.

The atomic density is different, so under the same temperature, oxidation pressure and other conditions, the crystal plane with high atomic density has a higher oxidation growth rate for silicon oxide wafer, and the linear stage at low temperature is more obvious.

The effect of silicon wafer oxide temperature can be seen from the relationship between the parabolic velocity constant B and the linear constant B/A and temperature. As shown in the following Table, the values of A, B, and B/A under different oxidation atmospheres and different temperatures are given.

Oxidized Form Temperature/℃ A/um B/(um2/min) B/A(um/min)
Dry oxygen oxidation 1200 0.04 7.5 x 10-4 1.87 x 10-2
1100 0.09 4.5 x 10-4 0.50 x 10-2
1000 0.165 1.95 x 10-4 0.118 x 10-2
920 0.235 0.82 x 10-4 0.0347 x 10-2
Wet Oxygen Oxidation

(95℃ water vapor)

 1200 0.050 1.2 x 10-2 2.40 x 10-1
1100 0.11 0.85 x 10-2 0.773 x 10-1
1000 0.226 0.48 x 10-2 0.212 x 10-1
920 0.50 0.34 x 10-2 0.068 x 10-1
Water Vapor Oxidation 1200 0.017 1.457 x 10-2 8.7 x 10-1
1094 0.083 0.909 x 10-2 1.09 x 10-1
973 0.3550 0.520 x 10-2 0.146 x 10-1

 

4. Quality Assessment for the Silicon Dioxide Wafer

After oxidation, the quality of silicon wafer with oxide layer should be evaluated. Because some of the tests are destructive, a certain number of samples specially used for testing are placed in different positions while sending a batch of crystal gardens into the furnace tube. Generally, it mainly includes surface inspection and thickness inspection of the thermal oxide growth silicon wafers. Surface inspection is usually performed on each silicon wafer with SiO2 under high-brightness ultraviolet light, including surface particles, irregularities, and stains that will appear under ultraviolet light.

The detection of silicon wafer oxide thickness is very important due to the requirements of different devices or different purposes. For example, the thickness of the MOS gate oxide layer is very strict. The detection techniques for silicon dioxide wafer include: color comparison, edge counting interference, ellipsometry and scanning electron microscope, etc.

powerwaywafer

For more information, please contact us email at [email protected] and [email protected].

2019-04-29

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