Silicon EPI Wafer-6

Silicon EPI Wafer-6

PAM XIAMEN offers4″ Silicon EPI Wafer-6

4″ Si epi wafer
(Top layer intrinsic Si / Middle layer Phosphorus Doped / Ion Implantation / Si substrate)

Top layer intrinsic Si:
Thickness 5μm,
Residual carrier concentration<1×1014/cm3

Middle layer Phosphorus Doped:
Resistivity around 0.025Ωcm (Phosphorous concentration 7×017/cm3),
Thickness 20μm,
Residual carrier concentration<2.1×1013/cm3

Layer with Ion Implantation: handled by customer

Two types of Si substrates as following:

Substrate 1:4″ FZ Si wafer
N type (100)
Thickness 500±15μm

Substrate 2:4″ GDFZ Si wafer
N type(100), As Doped,
Thickness 250±25μm,
Resistivity 0.001-0.005Ωcm,

Epitaxial wafer uniformity:
P doped middle layer: inner thickness uniformity < 4%, inner resistivity uniformity < 4%
Intrinsic silicon top layer: outer thickness uniformity < 4%, outer resistivity uniformity about 10%

For more information, please visit our website:,
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With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

Quality is our first priority. PAM-XIAMEN has been ISO9001:2008, owns and shares four modern facories which can provide quite a big range of qualified products to meet different needs of our customers, and every order has to be handled through our rigorous quality system. Test report is provided for each shipment, and each wafer are warranty.

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