Silicon Epi Wafer

Silicon Epi Wafer In Stock,List But Not Limited To The Following.

In Stock, But Not Limited To The Following.

Wafer No. Size Type Thickness(um) Resis( EPI (Type) EPI Thickness(μm) EPI Resis( Quantity(pcs)
PAM-XIAMEN-WAFER-#E3 4″ P111 500±15 P111 14.5-16.5um 6.5-7.5 34
PAM-XIAMEN-WAFER-#E4 4″ P111 500±15 P111 11-13um 3-3.6 33
PAM-XIAMEN-WAFER-#E5 4″ P111 500±15 P111 15±1.5um 2.5±0.25 19
PAM-XIAMEN-WAFER-#E6 4″ P111 500±15 P111 15±1um 5.5±0.5 20
PAM-XIAMEN-WAFER-#E7 2″ GaAs Epi Wafer 350um Voltage 1-10,Luminance 100-115 Wavelength 600-607 1.8-2.2 8
PAM-XIAMEN-WAFER-#E8 2″ GaN Epi Wafer 430um Sapphire Substrate Epi layer 4.7-9.1um 2
PAM-XIAMEN-WAFER-#E9 6″ P100 400±10 8-12 N100 20±10% 3.0-5.0 50
PAM-XIAMEN-WAFER-#E10 5″ P100 525±15 P100 21 <24 10
PAM-XIAMEN-WAFER-#E11 5″ N100 625±15 0.001-0.005 N100 8.5±0.51 0.9±0.05 13
PAM-XIAMEN-WAFER-#E12 5″ P100 525±15 0.005-0.020 P100 36-44 30-44 15
PAM-XIAMEN-WAFER-#E13 5″ N100 525±15 N100 21 60 5



What is silicon epitaxial wafer?
Silicon epi wafers were first developed around 1966, and achieved commercial acceptance by the early 1980s.[5] Methods for growing the epitaxial layer on monocrystalline silicon or other wafers include: various types of chemical vapor deposition (CVD) classified as Atmospheric pressure CVD (APCVD) or metal organic chemical vapor deposition (MOCVD), as well as molecular beam epitaxy (MBE).  Two “kerfless” methods (without abrasive sawing) for separating the epitaxial layer from the substrate are called “implant-cleave” and “stress liftoff”. A method applicable when the epi-layer and substrate are the same material employs ion implantation to deposit a thin layer of crystal impurity atoms and resulting mechanical stress at the precise depth of the intended epi layer thickness. The induced localized stress provide a controlled path for crack propagation in the following cleavage step.[7] In the dry stress lift-off process applicable when the epi-layer and substrate are suitably different materials, a controlled crack is driven by a temperature change at the epi/wafer interface purely by the thermal stresses due to the mismatch in thermal expansion between the epi layer and substrate, without the necessity for any external mechanical force or tool to aid crack propagation. It was reported that this process yields single atomic plane cleavage, reducing the need for post lift-off polishing, and allowing multiple reuses of the substrate up to 10 times.What is silicon epitaxial wafer?

What is silicon epitaxial wafer?

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