Silicon Ingots-2

PAM XIAMEN offers Silicon Ingots.

Material Description
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1,034.10-1,853.00 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 252mm)
FZ 4″Ø×14mm p-type Si:B[100], (2,700-8,300)Ohmcm, MCC Lifetime>1,000µs
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 2,724-4,388 Ohmcm, MCC Lifetime>1,000μs, (1 ingot: 232mm)
FZ 4″Ø ingot p-type Si:B[100] ±2°, Ro: 7,200-9,557 Ohmcm, MCC Lifetime>1,000μs, As-Grown, (1 ingot: 51.5mm)
FZ 4″Ø×55mm p-type Si:B[100], (1,000-2,000)Ohmcm, MCC Lifetime>700µs
FZ 4″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1.0-1.1 {1.0181-1.0783} Ohmcm, MCC Lifetime>1511μs, Ground, (2 ingots: 72mm, 106mm)
FZ 4″Ø×210mm p-type Si:B[100] (500-1,000)Ohmcm, MCC Lifetime=700µs, Ground
FZ 4″Ø ingot p-type Si:B[110] ±2°, Ro: 1,900-3,600 Ohmcm, (1 ingot: 100mm)
FZ 4″Ø ingot p-type Si:B[110] ±2°, Ro: 2,600-3,800 Ohmcm, (1 ingot: 99mm)
FZ 4″Ø ingot p-type Si:B[110] ±2°, Ro: 1-10 Ohmcm, Ground
FZ 4″Ø ingot p-type Si:B[111] ±0.5°, Ro: 8,220-12,252 Ohmcm, (1 ingot: 237mm)
FZ 4″Ø ingot n-type Si:P[100] ±2.0°, Ro: >5,000 Ohmcm
FZ 4″Ø×38mm ground ingot, n-type Si:P[100] (0.8-2.5) {0.91-2.29}Ohmcm, Lifetime >300µs, Ox<1E16/cc, C<1E16/cc
FZ 4″Ø ingot n-type Si:P[100] ±2.0°, Ro: 0.94-0.96 Ohmcm, MCC Lifetime>1000μs
FZ 4″Ø ingot n-type Si:P[100] ±2.0°, Ro: 163-174 Ohmcm, MCC Lifetime>14581μs, SEMI
FZ 4″Ø ingot n-type Si:P[110] ±2°, Ro: >1 Ohmcm, Ground
FZ 4″Ø ingot n-type Si:P[110] ±2°, Ro:>4,800Ohmcm, Ground, SEMI (47.5mm), T>1,000μs
FZ 4″Ø ingot n-type Si:P[111] ±2.0°, Ro: 0.0116-0.0121 Ohmcm, (1 ingot: 90mm)
FZ 4″Ø×40mm ground ingot, n-type Si:P[111], (5,000-13,000)Ohmcm, MCC Lifetime>1,100µs
FZ 4″Ø ingot n-type Si:P[111] ±2°, Ro: 6,100-7,800 Ohmcm, MCC Lifetime>1300μs, (1 ingot: 38mm)
FZ 4″Ø ingot n-type Si:P[111] ±0.5°, Ro: >1,000 Ohmcm, Ground, SEMI

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices.PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.

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