Silicon Nitride Waveguide – Substrates and Services Provided
PAM XIAMEN offers Silicon Nitride Waveguide
Clients fabricate SiN waveguides using contact lithography and pattern designs with waveguides with widths varying from 0.8 microns to 2.0 microns each of which has a straight reference waveguides and spiral waveguides with a set of lengths 1, 2, 4 and 8cm for cut-back measurements.
100mm Silicon with 5 micron of wet thermal oxide box layer, PECVD Nitride
We can provide the researcher with:
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, range from the first generation Germanium wafer, second generation Gallium Arsenide with substrate growth and epitaxy on III-V silicon doped n-type semiconductor materials based on Ga, Al, In, As and P grown by MBE or MOCVD, to the third generation: Silicon carbide and Gallium Nitride for LED and power device application.