Ge Wafer Substrate-Germanium
No.
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Prime flat
EPD
Ra
(mm)
(μm)
Ω·cm
Orientation
/cm2
1-100
Ge
(100)
50.8
500±25
SSP
0.0138-0.02
P/Ga
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500
SSP
≥30
N/undoped
N/A
N/A
<5A
1-100
Ge
(100)
50.8
500
SSP
58.4-63.4
N/undoped
N/A
N/A
N/A
1-100
Ge
(100)
50.8
500
SSP
0.1-1
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
50.8
500
SSP
0.1-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
50.8
1000
DSP
>30
N/A
(110)
N/A
N/A
1-100
Ge
(100)
50.8
2000
SSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
4000
SSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(111)/(110)
50.8
200000
N/A
5-20
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
400
SSP
<0.4
N/A
N/A
N/A
N/A
1-100
Ge
(100)/(111)
50.8
4000±10
DSP
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
50.8
350
SSP
1-10
P/Ga
(110)
≤5000
N/A
PAMP20295
Ge
(100)
50.8
500±25
SSP
2-10
P/Ga
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500±25
SSP
0.3-3
N/Sb
(110)
≤5000
N/A
1-100
Ge
(100)
50.8
500±25
SSP
0.3-3
P/Ga
(110)
≤5000
N/A
1-100
Ge
(111)
60
1000
As cut
>30
N/A
(110)
<3000
N/A
1-100
Ge
(100)
100
N/A
SSP
<0.019
P/Ga
(110)
<500
N/A
1-100
Ge
(100)
100
1000±25
SSP
≥30
N/undoped
N/A
N/A
N/A
1-100
Ge
(100) off 6°or off 9°
100
500
SSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
0.01-0.05
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
<0.01
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
<0.01
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
≥35
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
DSP
≥35
P/Ga
N/A
N/A
N/A
1-100
Ge
(100)
100
500
SSP
0.1-0.05
P/Ga
N/A
N/A
<5A
1-100
Ge
(100)
100
500
DSP
0.1-0.05
P/Ga
N/A
N/A
<5A
1-100
Ge
(100)6°off (111)
100
185±15
DSP
0.01-0.05
N/A
(110)
≤5000
<5A
1-100
Ge
(100)6°off (110)
100
525±25
SSP
0.01-0.04
N/A
N/A
N/A
N/A
1-100
Ge
(100)
100
N/A
N/A
N/A
N/A
N/A
N/A
N/A
1-100
Ge
(100)
100
1000±15
SSP
≥30
N/A
(110)
≤5000
N/A
1-100
Ge
(100)
100
750±25
SSP
≥30
N/A
(110)
≤5000
N/A
1-100
Ge
(100)
100
500±25
SSP
10-30
N/A
N/A
N/A
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
P/Ga
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
P/Ga
N/A
<4000
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
N/Sb
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
160
DSP
0.05-0.1
N/Sb
N/A
<4000
N/A
1-100
Ge
(100)/(111)
100
190
DSP
0.05-0.1
P/Ga
N/A
<500
N/A
1-100
Ge
(100)/(111)
100
190
DSP
0.05-0.1
P/Ga
N/A
<4000
N/A
1-100
Ge
(111)
100
500±25
SSP
<0.4
N/Sb
N/A
N/A
N/A
1-100
Ge
(100)6°off-cut toward(111)A
100
175±25
SSP
0.003-0.009
P/Ga
(0-1-1) (0-11)
<100
N/A
PAM210802
Ge
(100)
100
175
DSP
<0.02
P
N/A
N/A
N/A
1-100
Ge
(310)±0.1°
100
200±15
DSP
>20
N/A
N/A
N/A
N/A
1-100
Ge
(111)
150
600-700
N/A
>30
N/A
(110)
N/A
N/A
Germanium wafer list here is for your reference, if you need price detail, please contact our sales team. As a Ge wafer supplier, we also offer bulk Ge wafer with sepecial [...]
Silicon Wafer with thermal oxidation or Wet and Dry Thermal Oxide (SiO2) are in Stock,oxidation film(SiO2)can be custom
In Stock, But Not Limited To The Following.
Wafer No.c
Wafer Size
Polished /oxidation sides
Type/Orientation
Wafer Thickness(um)
oxidation thickness
Resistivity(Ohm.cm)
Quantity(pcs)
PAM-XIAMEN-WAFER-#O01
1″
SSP, both oxidation
P100
525±10
300nm
<0.005
290
PAM-XIAMEN-WAFER-#O02
2″
SSP, both oxidation
P100
500±20
3um
1-10
24
PAM-XIAMEN-WAFER-#O03
2″
DSP, both oxidation
N100
285±15
1um
1-10
50
PAM-XIAMEN-WAFER-#O04
2″
SSP, both oxidation
P100
430±10
300nm
<0.005
5
PAM-XIAMEN-WAFER-#O05
3″
SSP, both oxidation
100
400±10
2um
>10000
20
PAM-XIAMEN-WAFER-#O06
4″
SSP, both oxidation
100
400±10
2um
>10000
25
PAM-XIAMEN-WAFER-#O07
4″
SSP, both [...]
2019-11-27meta-author
Silicon Wafer
Si wafer Substrate -Silicon
Quantity
Material
Orientation.
Diameter
Thickness
Polish
Resistivity
Type Dopant
Nc
Mobility
EPD
PCS
(mm)
(μm)
Ω·cm
a/cm3
cm2/Vs
/cm2
1-100
Si
N/A
25.4
280
SSP
1-100
P/b
N/A
N/A
N/A
1-100
Si
N/A
25.4
280
SSP
1-100
P/b
(1-200)E16
N/A
N/A
1-100
Si
(100)
25.4
525
N/A
<0.005
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
525±25
SSP
<0.005
N/A
N/A
N/A
N/A
1-100
Si with Oxide layer
(100)
25.4
525±25
SSP
<0.005
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
350-500
SSP
1~10
N/A
N/A
N/A
N/A
1-100
Si
(100)
25.4
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
Si
(100)
50.4
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
p-Si with 90 nm SiO2
(100)
50.4
500±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
n-Si with 90 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
p-Si with 285 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
n-Si with 285 nm SiO2
(100)
50.4
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
Si with electrodes
(100)
50.8
400
N/A
<0.05
N/p
1E14-1E15
N/A
N/A
1-100
Si
(100)
50.8
275
SSP
1~10
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
275±25
SSP
1~10
N/p
N/A
N/A
N/A
1-100
Si
(111)
50.8
350±15
SSP
>10000
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
430±15
SSP
5000-8000
N/A
N/A
N/A
N/A
1-100
Si
(111)
50.8
410±15
SSP
1~20
N/A
N/A
N/A
N/A
1-100
Si
(111)
50.8
400-500
SSP
>5000
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
525±25
SSP
1~50
N/A
N/A
N/A
N/A
1-100
Si
(100)
50.8
500±25
SSP
1~10
N P
N/A
N/A
N/A
1-100
Si
(100)
50.8
500±25
P/P
>700
P/
N/A
N/A
N/A
1-100
Si
(100)
76.2
400±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
p-Si with 90 nm SiO2
(100)
76.2
500±25
P/E
<0.05
P/
N/A
N/A
N/A
1-100
n-Si with 90 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
p-Si with 285 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
n-Si with 285 nm SiO2
(100)
76.2
500±25
P/E
<0.05
N/
N/A
N/A
N/A
1-100
Si
(100)
100
625
SSP
>10000
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
525
SSP
N/A
N/P
N/A
N/A
N/A
1-100
Si
(100)
100
320
SSP
>2500ohm·cm
P/b
N/A
N/A
N/A
1-100
Si
(100)
100
N/A
SSP
10~30
N/p
N/A
N/A
N/A
1-100
Si
(100)
100
505±25
SSP
0.005-0.20
N/P-doped
N/A
N/A
N/A
1-100
Si
(100)
100
381
SSP
0.005-0.20
N/P-doped
N/A
N/A
N/A
1-100
Si
(100)
100
525
DSP
1-100
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
525
DSP
1-100
N/A
N/A
N/A
N/A
1-100
Si
(100)
100
625±25
SSP
0.001-0.004
N/A
N/A
N/A
N/A
1-100
Si [...]
Lithium Niobate(LNOI) with Metal Electrode
There are metal electrode layers (Au, Pt, Al or other metals) between the SiO2 layer and the LN film. An electric field can be applied on the LN film between the metal electrode layer and the top electrode layer. Based on piezoelectric [...]
2018-08-22meta-author
Silicon Carbide List
4″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-100-N-SIC-350-A
4″ 4H-N
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-100-N-SIC-350-B
4″ 4H-N
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-100-N-SIC-350-D
4″ 4H-N
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
S4H-100-N-SIC-370-L
4″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-100-N-SIC-440-AC
4″ 4H-N
0°/4°±0.5°
440±25um
D
*
As-cut
>75%
S4H-100-N-SIC-C0510-AC-D
4″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-100-N-SIC-C1015-AC-C
4″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
3″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-76-N-SIC-350-A
3″ 4H-N
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-76-N-SIC-350-B
3″ 4H-N
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-76-N-SIC-350-D
3″ 4H-N
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
S4H-76-N-SIC-370-L
3″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-76-N-SIC-410-AC
3″ 4H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S4H-76-N-SIC-C0510-AC-D
3″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-76-N-SIC-C1015-AC-D
3″ 4H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S4H-76-N-SIC-C0510-AC-C
3″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S4H-76-N-SIC-C1015-AC-C
3″ 4H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
SEMI-INSULATING
S4H-76-SI-SIC-350-A
3″ 4H-SI
0°/4°±0.5°
350±25um
A
<10/cm2
P/P
>90%
S4H-76-SI-SIC-350-B
3″ 4H-SI
0°/4°±0.5°
350±25um
B
< 30/cm2
P/P
>85%
S4H-76-SI-SIC-350-D
3″ 4H-SI
0°/4°±0.5°
350±25um
D
<100/cm2
P/P
>75%
2″ 4H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S4H-51-N-SIC-330-A
2″ 4H-N
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S4H-51-N-SIC-330-B
2″ 4H-N
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S4H-51-N-SIC-330-D
2″ 4H-N
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S4H-51-N-SIC-370-L
2″ 4H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S4H-51-N-SIC-410-AC
2″ 4H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S4H-51-N-SIC-C0510-AC-D
2″ 4H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S4H-51-N-SIC-C1015-AC-D
2″ 4H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S4H-51-N-SIC-C0510-AC-C
2″ 4H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S4H-51-N-SIC-C1015-AC-C
2″ 4H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
2″ 6H Silicon Carbide
Item No.
Type
Orientation
Thickness
Grade
Micropipe Density
Surface
Usable area
N-Type
S6H-51-N-SIC-330-A
2″ 6H-N
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S6H-51-N-SIC-330-B
2″ 6H-N
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S6H-51-N-SIC-330-D
2″ 6H-N
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S6H-51-N-SIC-370-L
2″ 6H-N
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S6H-51-N-SIC-410-AC
2″ 6H-N
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S6H-51-N-SIC-C0510-AC-D
2″ 6H-N
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S6H-51-N-SIC-C1015-AC-D
2″ 6H-N
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
S6H-51-N-SIC-C0510-AC-C
2″ 6H-N
0°/4°±0.5°
5~10mm
C
<50/cm2
As-cut
*
S6H-51-N-SIC-C1015-AC-C
2″ 6H-N
0°/4°±0.5°
10~15mm
C
<50/cm2
As-cut
*
SEMI-INSULATING
S6H-51-SI-SIC-330-A
2″ 6H-SI
0°/4°±0.5°
330±25um
A
<10/cm2
C/P
>90%
S6H-51-SI-SIC-330-B
2″ 6H-SI
0°/4°±0.5°
330±25um
B
< 30/cm2
C/P
>85%
S6H-51-SI-SIC-330-D
2″ 6H-SI
0°/4°±0.5°
330±25um
D
<100/cm2
C/P
>75%
S6H-51-SI-SIC-370-L
2″ 6H-SI
0°/4°±0.5°
370±25um
D
*
L/L
>75%
S6H-51-SI-SIC-410-AC
2″ 6H-SI
0°/4°±0.5°
410±25um
D
*
As-cut
>75%
S6H-51-SI-SIC-C0510-AC-D
2″ 6H-SI
0°/4°±0.5°
5~10mm
D
<100/cm2
As-cut
*
S6H-51-SI-SIC-C1015-AC-D
2″ 6H-SI
0°/4°±0.5°
10~15mm
D
<100/cm2
As-cut
*
Please see below sub-catalogue:
6H n type SiC
4H N Type SiC
4H Semi-insulating SiC
SiC Ingots
Lapped Wafers
Polishing Wafer
As a SiC wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team.
Note:
*** As manufacturer, we also accept small quantity for researcher or foundry.
***Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.
Glass Wafer
We are one of the world’s leading glass wafer suppliers, provide thin & ultra-thin glass wafers and substrates which are made of different materials, such as Borofloat, Fused Silica & Quartz, BK7, Soda Lime etc for MEMS, fiber optic AWG, LCD panels and [...]
2018-07-11meta-author
