Silicon Wafer With Thermal Oxidation Or Wet And Dry Thermal Oxide (Sio2)

Silicon Wafer with thermal oxidation or Wet and Dry Thermal Oxide (SiO2) are in Stock,oxidation film(SiO2)can be custom

In Stock, But Not Limited To The Following.

Wafer No.c Wafer Size Polished /oxidation sides  Type/Orientation Wafer Thickness(um) oxidation thickness Resistivity(Ohm.cm) Quantity(pcs)
PAM-XIAMEN-WAFER-#O01 1″ SSP, both oxidation P100 525±10 300nm <0.005 290
PAM-XIAMEN-WAFER-#O02 2″ SSP, both oxidation P100 500±20 3um 1-10 24
PAM-XIAMEN-WAFER-#O03 2″ DSP, both oxidation N100 285±15 1um 1-10 50
PAM-XIAMEN-WAFER-#O04 2″ SSP, both oxidation P100 430±10 300nm <0.005 5
PAM-XIAMEN-WAFER-#O05 3″ SSP, both oxidation 100 400±10 2um >10000 20
PAM-XIAMEN-WAFER-#O06 4″ SSP, both oxidation 100 400±10 2um >10000 25
PAM-XIAMEN-WAFER-#O07 4″ SSP, both oxidation N111 435-465 2um(1.6um) 0.01-0.015 22
PAM-XIAMEN-WAFER-#O08 4″ SSP, single oxidation P100 500±10 1um 3-8 21
PAM-XIAMEN-WAFER-#O09 4″ SSP, both oxidation P111 525±15 500nm 0.001-0.009 18
PAM-XIAMEN-WAFER-#O10 4″ SSP, single oxidation 100 400±10 500nm 3000-5000 23
PAM-XIAMEN-WAFER-#O11 4″ DSP, both oxidation N100 400±10 500nm 1-10 6
PAM-XIAMEN-WAFER-#O12 4″ SSP, both oxidation N100 500um 500nm 5-10 1
PAM-XIAMEN-WAFER-#O13 4″ SSP, both oxidation N100 500um 280nm/320nm 0.01-0.05 20
PAM-XIAMEN-WAFER-#O14 4″ SSP, both oxidation P100 700±10 300-310nm 0.001-0.002 18
PAM-XIAMEN-WAFER-#O15 4″ SSP, both oxidation P100 700±10 305±5nmdry-oxygen oxidation <0.1 54
PAM-XIAMEN-WAFER-#O16 4″ DSP, both oxidation 100 525±10 200nm >10000 19
PAM-XIAMEN-WAFER-#O17 4″ SSP, both oxidation 100 500±25 200nm >10000 3
PAM-XIAMEN-WAFER-#O18 4″ SSP, both oxidation P100 500±20 150nm <0.0015 3
PAM-XIAMEN-WAFER-#O19 4″ SSP, both oxidation P111 500um 50-80nm <0.05 2
PAM-XIAMEN-WAFER-#O20 2″ DSP, both oxidation 100 FZ 500±50 500±50nm 5000-8000 25
PAM-XIAMEN-WAFER-#O21 6″ SSP, both oxidation N100 510±15 200nm >6000 45
PAM-XIAMEN-WAFER-#O22 6″ SSP, both oxidation P111 645±25 500nm 5-25 16
PAM-XIAMEN-WAFER-#O23 6″ DSP, single oxidation 100 650um 500nm >5000 15
PAM-XIAMEN-WAFER-#O24 6″ SSP, both oxidation P100 675±25 500nm 0.5-100 1
PAM-XIAMEN-WAFER-#O25 6″ SSP, both oxidation 100 625±25 2um 23
PAM-XIAMEN-WAFER-#O26 6″ SSP, both oxidation N100 650±50 2.8um 0.1-100 50
PAM-XIAMEN-WAFER-#O27 12″ DSP, both oxidation P100 775±25 2um±10% 1-100 25
PAM-XIAMEN-WAFER-#O28 8″ SSP, both oxidation 36
PAM-XIAMEN-WAFER-#O29 4″ SSP, both oxidation P100 500±25 310nm 0.01-0.09 12
PAM-XIAMEN-WAFER-#O30 4″ SSP, both oxidation P100 515±15 315nm 0.008-0.012 16
PAM-XIAMEN-WAFER-#O31 5″ SSP, both oxidation N100 525±15 300nm+ <0.005 33
PAM-XIAMEN-WAFER-#O32 4″ SSP, single oxidation P100 525±10 100nm 0.001-0.006 1
PAM-XIAMEN-WAFER-#O33 6″ SSP, both oxidation P100 675±25 8um±5% 10-20 48
PAM-XIAMEN-WAFER-#O34 12″ DSP, both oxidation 120
PAM-XIAMEN-WAFER-#O35 6″ SSP, both oxidation 625±25 2um 4
PAM-XIAMEN-WAFER-#O36 3″ SSP, both oxidation P100 375±25 280±20nm <0.005 29
PAM-XIAMEN-WAFER-#O37 4″ SSP, both oxidation 100 FZ 525±20 1um >100 7
PAM-XIAMEN-WAFER-#O38 4″ SSP, both oxidation N100 525±25 1um 0.008-0.02 13
PAM-XIAMEN-WAFER-#O39 6″ DSP, both oxidation P100 450±15 300nm >5000 27
PAM-XIAMEN-WAFER-#O40 4″ SSP, both oxidation N100 500±10 6um 1-10 11
PAM-XIAMEN-WAFER-#O41 8″ SSP, both oxidation P100 700(>650) 500nm 0.5-100 140
PAM-XIAMEN-WAFER-#O42 8″ SSP, both oxidation P100 725±25 300nm 1-100 15
PAM-XIAMEN-WAFER-#O43 4″ SSP, both oxidation N100 525±25 300nmdry-oxygen oxidation 0.001-0.005 25
PAM-XIAMEN-WAFER-#O44 3″ SSP, both oxidation 100 FZ 400±10 2um >10000 25
PAM-XIAMEN-WAFER-#O45 4″ SSP, both oxidation P100 525±25 270-280nm 0.01-0.02 1
PAM-XIAMEN-WAFER-#O46 4″ SSP, both oxidation P111 510-540 25nm 0.006-0.0075 25
PAM-XIAMEN-WAFER-#O47 8″ SSP, both oxidation 700um 200nm-500nm 390
PAM-XIAMEN-WAFER-#O48 8″ SSP, both oxidation 174
PAM-XIAMEN-WAFER-#O49 2″ SSP, both oxidation N111 400±15 290nm 0.01-0.02 20
PAM-XIAMEN-WAFER-#O50 4″ SSP, single oxidation P100 525±25 300nm 0.01-0.09 3
PAM-XIAMEN-WAFER-#O51 4″ SSP, single oxidation N100 525±20 305±5nm 0.01-0.02 10
PAM-XIAMEN-WAFER-#O52 3″ SSP, both oxidation N100 381±20 300nmdry-oxygen oxidation <0.005 20
PAM-XIAMEN-WAFER-#O53 4″ SSP, both oxidation N100 450±25 280±20nm 0.01-0.02 56
PAM-XIAMEN-WAFER-#O54 3 SSP, both oxidation P100 380±20 90nm 1-10 18
PAM-XIAMEN-WAFER-#O55 4″ SSP, both oxidation P100 525±25 280nm >10000 23
PAM-XIAMEN-WAFER-#O56 4″ SSP, both oxidation P100 525±25 300nmdry-oxygen oxidation 0.001-0.005 5
PAM-XIAMEN-WAFER-#O57 5″ SSP, both oxidation N100 525±15 280nm <0.005 30
PAM-XIAMEN-WAFER-#O58 5″ SSP, both oxidation N100 525±25 280nm 0.001-0.005 25
PAM-XIAMEN-WAFER-#O59 4″ SSP, single oxidation N100 520±20 280±2nm 0.01-0.02 25
PAM-XIAMEN-WAFER-#O60 4″ SSP, single oxidation N100 450±25 300±5nmdry-oxygen oxidation 0.01-0.02 19
PAM-XIAMEN-WAFER-#O61 4″ SSP, single oxidation N100 450±25 300±5nm 0.01-0.02 25
PAM-XIAMEN-WAFER-#O62 4″ SSP, single oxidation N100 520±20 283-290nm 0.01-0.02 25
PAM-XIAMEN-WAFER-#O63 4″ SSP, single oxidation N100 520±20 300-305nm 0.002-0.004 20
PAM-XIAMEN-WAFER-#O64 4″ SSP, both oxidation P100 525±25 100nm 1-10 17
PAM-XIAMEN-WAFER-#O65 4″ SSP, single oxidation N100 510±10 500nm 0.01-0.02 6
PAM-XIAMEN-WAFER-#O66 4″ SSP, single oxidation N100 525±25 100nm 0.002-0.004 4
PAM-XIAMEN-WAFER-#O67 4″ DSP, both oxidation N100 750±20 500nm 2-10 9
PAM-XIAMEN-WAFER-#O68 4″ SSP, single oxidation P100 500±10 100nm 3-8 19
PAM-XIAMEN-WAFER-#O69 4″ SSP, single oxidation P100 500±10 500nm 3-8 20
PAM-XIAMEN-WAFER-#O70 2″ SSP, both oxidation P100 675±20 285nm >10 25
PAM-XIAMEN-WAFER-#O71 4″ SSP, both oxidation P100 525±25 285nm 0.01-0.02 28
PAM-XIAMEN-WAFER-#O72 8″ SSP, both oxidation P100 725±25 500nm 0.1-100 68
PAM-XIAMEN-WAFER-#O73 4″ DSP, both oxidation P100 480±10 300nm 1-10 13
PAM-XIAMEN-WAFER-#O74 5″ SSP, both oxidation N100 600-650 285nm 0.003-0.005 100
PAM-XIAMEN-WAFER-#O75 5″ SSP, both oxidation N100 500-550 285nm <0.004 175
PAM-XIAMEN-WAFER-#O76 4″ SSP, both oxidation P100 525±25 275nm 0.001-0.005 25
PAM-XIAMEN-WAFER-#O77 4″ SSP, both oxidation P100 485±25 275nm 0.01-0.02 150
PAM-XIAMEN-WAFER-#O78 4″ SSP, both oxidation N100 525±25 90nm 0.002-0.004 91
PAM-XIAMEN-WAFER-#O79 4″ SSP, both oxidation P100 525±25 285nm 0.001-0.005 25
PAM-XIAMEN-WAFER-#O80 4″ SSP, both oxidation P100 525±25 271-282nm 0.01-0.02 50
PAM-XIAMEN-WAFER-#O81 4″ SSP, both oxidation P100 525±25 275nm 0.001-0.005 200
PAM-XIAMEN-WAFER-#O82 4″ SSP, both oxidation P100 525±25 273-282nm 0.001-0.005 50
PAM-XIAMEN-WAFER-#O83 5″ SSP, single oxidation N100 525±25 295-300nm 0.02 16
PAM-XIAMEN-WAFER-#O84 6″ SSP, both oxidation 675±25 300nm 1-30 23
PAM-XIAMEN-WAFER-#O85 4″ SSP, both oxidation N100 475-525 100nm 0.01-0.02 125
PAM-XIAMEN-WAFER-#O86 4″ SSP, both oxidation N100 450um 280nm 0.02-0.025 100
PAM-XIAMEN-WAFER-#O87 4″ SSP, both oxidation P100 500±10 280nm <0.0015 75
PAM-XIAMEN-WAFER-#O88 2″ SSP, both oxidation N100 280±15 280nm <0.05 25
PAM-XIAMEN-WAFER-#O89 2″ SSP, both oxidation P100 400±15 280nm <0.0015 25
PAM-XIAMEN-WAFER-#O90 3″ SSP, both oxidation N100 381±20 280nm <0.005 95
PAM-XIAMEN-WAFER-#O91 6″ SSP, both oxidation P100 675±10 300nm 1-100 47
PAM-XIAMEN-WAFER-#O92 6″ SSP, both oxidation P100 675±25 300nm 10-20 2
PAM-XIAMEN-WAFER-#O93 4″ SSP, both oxidation P100 525±25 280nmdry-oxygen oxidation 0.01-0.02 100
PAM-XIAMEN-WAFER-#O94 4″ SSP, both oxidation P100 525±25 100nmdry-oxygen oxidation 0.001-0.002 100
PAM-XIAMEN-WAFER-#O95 4″ SSP, single oxidation P100 525±25 105nm 0.001-0.005 50
PAM-XIAMEN-WAFER-#O96 4″ SSP, both oxidation P100 525±25 280nm 0.001-0.005 25
PAM-XIAMEN-WAFER-#O97 2″ SSP, both oxidation P100 400±15 6um准 1-5 25
PAM-XIAMEN-WAFER-#O98 4″ SSP, both oxidation P100 525±25 1um 0.001-0.005 70
PAM-XIAMEN-WAFER-#O99 6″ SSP, both oxidation P100 675um 200nm 1-50 119
PAM-XIAMEN-WAFER-#O100 6″ SSP, both oxidation P100 675um 300nm 1-50 75
PAM-XIAMEN-WAFER-#O101 6″ SSP, both oxidation N100 675±25 300nm 1-100 75
PAM-XIAMEN-WAFER-#O102 4″ SSP, both oxidation P100 525±25 25nm 1-10 22
PAM-XIAMEN-WAFER-#O103 4″ SSP, both oxidation P100 525±25 25nm 0.001-0.002 16
PAM-XIAMEN-WAFER-#O104 4″ SSP, single oxidation P100 500±25 500nm 1-10 3
PAM-XIAMEN-WAFER-#O105 4″ SSP, both oxidation N100 450±20 50nm 0.01-0.02 25
PAM-XIAMEN-WAFER-#O106 4″ SSP, both oxidation N100 500um 290nmNet Oxide 0.01-0.02 100
PAM-XIAMEN-WAFER-#O107 4″ SSP, both oxidation N100 525±20 50nm 0.01-0.02 1

 

 

For silicon wafer with dioxide, there are two kinds: Wet Oxide:Our Wet Thermal Oxidation process was designed for growing thicker oxide layers while maintaining the same level of quality you would expect from Dry Thermal Oxidation; Dry Oxide: Our ultra pure dry oxidation process is available for those applications requiring thinner oxides and is designed to ensure that you receive the highest quality film. We also offer custom spec to meet your requirement.

How is Thermal Oxide Applied to Silicon Wafers?
Regularly there are three detail application:
1/Grown Dry Oxidation – By default dry oxide is grown on just one side of the wafer.
2/Wet Oxidation Grown – Wave guides technology and Silicon on Insulator wafers (SOI) can benefit greatly from our thick Thermal Oxide layers. We provide thermal oxide up to 15um in thickness. Grown on both sides of the wafers by default.
3/Deposited CVD – When you cannot oxidize Silicon, then you can use Chemical Vapor Deposition to deposit the oxide on top of your substrate.
What is Purpose of Growing Thermal Oxide Onto Silicon?
There are below five main purpose: Gate oxide; Masking material during doping; Providing protection for the conductors; Isolate devices from each other; A dielectric for a capacitor

What are the Factors to affect Oxide Growth?
There are following factors:Using dry oxidation (Oxygen gas) or wet oxidation steam;Pressure;Temperature;Lattice Orientation (oxide grows faster on (111) oriented wafers then (100) oriented silicon wafers;

Relative keywords in papers :wet oxidation,dry oxidation,thermal oxide, thermal oxide calculator, thermal oxide thickness, thermal oxide wafer, thermal oxide properties, thermal oxide growth, thermal oxide furnace, thermal oxide dielectric constant, thermal oxide growth calculator,silicon wafer thermal oxide, thermal oxide wafer, thermal oxide si wafer, thermal oxidation of silicon, thermal oxidation of silicon wafer, thermal oxidation calculator, thermal oxidation unit

PAM-XIAMEN can offer you technology and wafer support,
for more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Share this post