Silicon Wafer with thermal oxidation or Wet and Dry Thermal Oxide (SiO2) are in Stock,oxidation film(SiO2)can be custom
In Stock, But Not Limited To The Following.
Wafer No.c | Wafer Size | Polished /oxidation sides | Type/Orientation | Wafer Thickness(um) | oxidation thickness | Resistivity(Ohm.cm) | Quantity(pcs) |
PAM-XIAMEN-WAFER-#O01 | 1″ | SSP, both oxidation | P100 | 525±10 | 300nm | <0.005 | 290 |
PAM-XIAMEN-WAFER-#O02 | 2″ | SSP, both oxidation | P100 | 500±20 | 3um | 1-10 | 24 |
PAM-XIAMEN-WAFER-#O03 | 2″ | DSP, both oxidation | N100 | 285±15 | 1um | 1-10 | 50 |
PAM-XIAMEN-WAFER-#O04 | 2″ | SSP, both oxidation | P100 | 430±10 | 300nm | <0.005 | 5 |
PAM-XIAMEN-WAFER-#O05 | 3″ | SSP, both oxidation | 100 | 400±10 | 2um | >10000 | 20 |
PAM-XIAMEN-WAFER-#O06 | 4″ | SSP, both oxidation | 100 | 400±10 | 2um | >10000 | 25 |
PAM-XIAMEN-WAFER-#O07 | 4″ | SSP, both oxidation | N111 | 435-465 | 2um(1.6um) | 0.01-0.015 | 22 |
PAM-XIAMEN-WAFER-#O08 | 4″ | SSP, single oxidation | P100 | 500±10 | 1um | 3-8 | 21 |
PAM-XIAMEN-WAFER-#O09 | 4″ | SSP, both oxidation | P111 | 525±15 | 500nm | 0.001-0.009 | 18 |
PAM-XIAMEN-WAFER-#O10 | 4″ | SSP, single oxidation | 100 | 400±10 | 500nm | 3000-5000 | 23 |
PAM-XIAMEN-WAFER-#O11 | 4″ | DSP, both oxidation | N100 | 400±10 | 500nm | 1-10 | 6 |
PAM-XIAMEN-WAFER-#O12 | 4″ | SSP, both oxidation | N100 | 500um | 500nm | 5-10 | 1 |
PAM-XIAMEN-WAFER-#O13 | 4″ | SSP, both oxidation | N100 | 500um | 280nm/320nm | 0.01-0.05 | 20 |
PAM-XIAMEN-WAFER-#O14 | 4″ | SSP, both oxidation | P100 | 700±10 | 300-310nm | 0.001-0.002 | 18 |
PAM-XIAMEN-WAFER-#O15 | 4″ | SSP, both oxidation | P100 | 700±10 | 305±5nmdry-oxygen oxidation | <0.1 | 54 |
PAM-XIAMEN-WAFER-#O16 | 4″ | DSP, both oxidation | 100 | 525±10 | 200nm | >10000 | 19 |
PAM-XIAMEN-WAFER-#O17 | 4″ | SSP, both oxidation | 100 | 500±25 | 200nm | >10000 | 3 |
PAM-XIAMEN-WAFER-#O18 | 4″ | SSP, both oxidation | P100 | 500±20 | 150nm | <0.0015 | 3 |
PAM-XIAMEN-WAFER-#O19 | 4″ | SSP, both oxidation | P111 | 500um | 50-80nm | <0.05 | 2 |
PAM-XIAMEN-WAFER-#O20 | 2″ | DSP, both oxidation | 100 FZ | 500±50 | 500±50nm | 5000-8000 | 25 |
PAM-XIAMEN-WAFER-#O21 | 6″ | SSP, both oxidation | N100 | 510±15 | 200nm | >6000 | 45 |
PAM-XIAMEN-WAFER-#O22 | 6″ | SSP, both oxidation | P111 | 645±25 | 500nm | 5-25 | 16 |
PAM-XIAMEN-WAFER-#O23 | 6″ | DSP, single oxidation | 100 | 650um | 500nm | >5000 | 15 |
PAM-XIAMEN-WAFER-#O24 | 6″ | SSP, both oxidation | P100 | 675±25 | 500nm | 0.5-100 | 1 |
PAM-XIAMEN-WAFER-#O25 | 6″ | SSP, both oxidation | 100 | 625±25 | 2um | — | 23 |
PAM-XIAMEN-WAFER-#O26 | 6″ | SSP, both oxidation | N100 | 650±50 | 2.8um | 0.1-100 | 50 |
PAM-XIAMEN-WAFER-#O27 | 12″ | DSP, both oxidation | P100 | 775±25 | 2um±10% | 1-100 | 25 |
PAM-XIAMEN-WAFER-#O28 | 8″ | SSP, both oxidation | — | — | — | — | 36 |
PAM-XIAMEN-WAFER-#O29 | 4″ | SSP, both oxidation | P100 | 500±25 | 310nm | 0.01-0.09 | 12 |
PAM-XIAMEN-WAFER-#O30 | 4″ | SSP, both oxidation | P100 | 515±15 | 315nm | 0.008-0.012 | 16 |
PAM-XIAMEN-WAFER-#O31 | 5″ | SSP, both oxidation | N100 | 525±15 | 300nm+ | <0.005 | 33 |
PAM-XIAMEN-WAFER-#O32 | 4″ | SSP, single oxidation | P100 | 525±10 | 100nm | 0.001-0.006 | 1 |
PAM-XIAMEN-WAFER-#O33 | 6″ | SSP, both oxidation | P100 | 675±25 | 8um±5% | 10-20 | 48 |
PAM-XIAMEN-WAFER-#O34 | 12″ | DSP, both oxidation | — | — | — | — | 120 |
PAM-XIAMEN-WAFER-#O35 | 6″ | SSP, both oxidation | — | 625±25 | 2um | — | 4 |
PAM-XIAMEN-WAFER-#O36 | 3″ | SSP, both oxidation | P100 | 375±25 | 280±20nm | <0.005 | 29 |
PAM-XIAMEN-WAFER-#O37 | 4″ | SSP, both oxidation | 100 FZ | 525±20 | 1um | >100 | 7 |
PAM-XIAMEN-WAFER-#O38 | 4″ | SSP, both oxidation | N100 | 525±25 | 1um | 0.008-0.02 | 13 |
PAM-XIAMEN-WAFER-#O39 | 6″ | DSP, both oxidation | P100 | 450±15 | 300nm | >5000 | 27 |
PAM-XIAMEN-WAFER-#O40 | 4″ | SSP, both oxidation | N100 | 500±10 | 6um | 1-10 | 11 |
PAM-XIAMEN-WAFER-#O41 | 8″ | SSP, both oxidation | P100 | 700(>650) | 500nm | 0.5-100 | 140 |
PAM-XIAMEN-WAFER-#O42 | 8″ | SSP, both oxidation | P100 | 725±25 | 300nm | 1-100 | 15 |
PAM-XIAMEN-WAFER-#O43 | 4″ | SSP, both oxidation | N100 | 525±25 | 300nmdry-oxygen oxidation | 0.001-0.005 | 25 |
PAM-XIAMEN-WAFER-#O44 | 3″ | SSP, both oxidation | 100 FZ | 400±10 | 2um | >10000 | 25 |
PAM-XIAMEN-WAFER-#O45 | 4″ | SSP, both oxidation | P100 | 525±25 | 270-280nm | 0.01-0.02 | 1 |
PAM-XIAMEN-WAFER-#O46 | 4″ | SSP, both oxidation | P111 | 510-540 | 25nm | 0.006-0.0075 | 25 |
PAM-XIAMEN-WAFER-#O47 | 8″ | SSP, both oxidation | — | 700um | 200nm-500nm | — | 390 |
PAM-XIAMEN-WAFER-#O48 | 8″ | SSP, both oxidation | — | — | — | — | 174 |
PAM-XIAMEN-WAFER-#O49 | 2″ | SSP, both oxidation | N111 | 400±15 | 290nm | 0.01-0.02 | 20 |
PAM-XIAMEN-WAFER-#O50 | 4″ | SSP, single oxidation | P100 | 525±25 | 300nm | 0.01-0.09 | 3 |
PAM-XIAMEN-WAFER-#O51 | 4″ | SSP, single oxidation | N100 | 525±20 | 305±5nm | 0.01-0.02 | 10 |
PAM-XIAMEN-WAFER-#O52 | 3″ | SSP, both oxidation | N100 | 381±20 | 300nmdry-oxygen oxidation | <0.005 | 20 |
PAM-XIAMEN-WAFER-#O53 | 4″ | SSP, both oxidation | N100 | 450±25 | 280±20nm | 0.01-0.02 | 56 |
PAM-XIAMEN-WAFER-#O54 | 3 | SSP, both oxidation | P100 | 380±20 | 90nm | 1-10 | 18 |
PAM-XIAMEN-WAFER-#O55 | 4″ | SSP, both oxidation | P100 | 525±25 | 280nm | >10000 | 23 |
PAM-XIAMEN-WAFER-#O56 | 4″ | SSP, both oxidation | P100 | 525±25 | 300nmdry-oxygen oxidation | 0.001-0.005 | 5 |
PAM-XIAMEN-WAFER-#O57 | 5″ | SSP, both oxidation | N100 | 525±15 | 280nm | <0.005 | 30 |
PAM-XIAMEN-WAFER-#O58 | 5″ | SSP, both oxidation | N100 | 525±25 | 280nm | 0.001-0.005 | 25 |
PAM-XIAMEN-WAFER-#O59 | 4″ | SSP, single oxidation | N100 | 520±20 | 280±2nm | 0.01-0.02 | 25 |
PAM-XIAMEN-WAFER-#O60 | 4″ | SSP, single oxidation | N100 | 450±25 | 300±5nmdry-oxygen oxidation | 0.01-0.02 | 19 |
PAM-XIAMEN-WAFER-#O61 | 4″ | SSP, single oxidation | N100 | 450±25 | 300±5nm | 0.01-0.02 | 25 |
PAM-XIAMEN-WAFER-#O62 | 4″ | SSP, single oxidation | N100 | 520±20 | 283-290nm | 0.01-0.02 | 25 |
PAM-XIAMEN-WAFER-#O63 | 4″ | SSP, single oxidation | N100 | 520±20 | 300-305nm | 0.002-0.004 | 20 |
PAM-XIAMEN-WAFER-#O64 | 4″ | SSP, both oxidation | P100 | 525±25 | 100nm | 1-10 | 17 |
PAM-XIAMEN-WAFER-#O65 | 4″ | SSP, single oxidation | N100 | 510±10 | 500nm | 0.01-0.02 | 6 |
PAM-XIAMEN-WAFER-#O66 | 4″ | SSP, single oxidation | N100 | 525±25 | 100nm | 0.002-0.004 | 4 |
PAM-XIAMEN-WAFER-#O67 | 4″ | DSP, both oxidation | N100 | 750±20 | 500nm | 2-10 | 9 |
PAM-XIAMEN-WAFER-#O68 | 4″ | SSP, single oxidation | P100 | 500±10 | 100nm | 3-8 | 19 |
PAM-XIAMEN-WAFER-#O69 | 4″ | SSP, single oxidation | P100 | 500±10 | 500nm | 3-8 | 20 |
PAM-XIAMEN-WAFER-#O70 | 2″ | SSP, both oxidation | P100 | 675±20 | 285nm | >10 | 25 |
PAM-XIAMEN-WAFER-#O71 | 4″ | SSP, both oxidation | P100 | 525±25 | 285nm | 0.01-0.02 | 28 |
PAM-XIAMEN-WAFER-#O72 | 8″ | SSP, both oxidation | P100 | 725±25 | 500nm | 0.1-100 | 68 |
PAM-XIAMEN-WAFER-#O73 | 4″ | DSP, both oxidation | P100 | 480±10 | 300nm | 1-10 | 13 |
PAM-XIAMEN-WAFER-#O74 | 5″ | SSP, both oxidation | N100 | 600-650 | 285nm | 0.003-0.005 | 100 |
PAM-XIAMEN-WAFER-#O75 | 5″ | SSP, both oxidation | N100 | 500-550 | 285nm | <0.004 | 175 |
PAM-XIAMEN-WAFER-#O76 | 4″ | SSP, both oxidation | P100 | 525±25 | 275nm | 0.001-0.005 | 25 |
PAM-XIAMEN-WAFER-#O77 | 4″ | SSP, both oxidation | P100 | 485±25 | 275nm | 0.01-0.02 | 150 |
PAM-XIAMEN-WAFER-#O78 | 4″ | SSP, both oxidation | N100 | 525±25 | 90nm | 0.002-0.004 | 91 |
PAM-XIAMEN-WAFER-#O79 | 4″ | SSP, both oxidation | P100 | 525±25 | 285nm | 0.001-0.005 | 25 |
PAM-XIAMEN-WAFER-#O80 | 4″ | SSP, both oxidation | P100 | 525±25 | 271-282nm | 0.01-0.02 | 50 |
PAM-XIAMEN-WAFER-#O81 | 4″ | SSP, both oxidation | P100 | 525±25 | 275nm | 0.001-0.005 | 200 |
PAM-XIAMEN-WAFER-#O82 | 4″ | SSP, both oxidation | P100 | 525±25 | 273-282nm | 0.001-0.005 | 50 |
PAM-XIAMEN-WAFER-#O83 | 5″ | SSP, single oxidation | N100 | 525±25 | 295-300nm | 0.02 | 16 |
PAM-XIAMEN-WAFER-#O84 | 6″ | SSP, both oxidation | — | 675±25 | 300nm | 1-30 | 23 |
PAM-XIAMEN-WAFER-#O85 | 4″ | SSP, both oxidation | N100 | 475-525 | 100nm | 0.01-0.02 | 125 |
PAM-XIAMEN-WAFER-#O86 | 4″ | SSP, both oxidation | N100 | 450um | 280nm | 0.02-0.025 | 100 |
PAM-XIAMEN-WAFER-#O87 | 4″ | SSP, both oxidation | P100 | 500±10 | 280nm | <0.0015 | 75 |
PAM-XIAMEN-WAFER-#O88 | 2″ | SSP, both oxidation | N100 | 280±15 | 280nm | <0.05 | 25 |
PAM-XIAMEN-WAFER-#O89 | 2″ | SSP, both oxidation | P100 | 400±15 | 280nm | <0.0015 | 25 |
PAM-XIAMEN-WAFER-#O90 | 3″ | SSP, both oxidation | N100 | 381±20 | 280nm | <0.005 | 95 |
PAM-XIAMEN-WAFER-#O91 | 6″ | SSP, both oxidation | P100 | 675±10 | 300nm | 1-100 | 47 |
PAM-XIAMEN-WAFER-#O92 | 6″ | SSP, both oxidation | P100 | 675±25 | 300nm | 10-20 | 2 |
PAM-XIAMEN-WAFER-#O93 | 4″ | SSP, both oxidation | P100 | 525±25 | 280nmdry-oxygen oxidation | 0.01-0.02 | 100 |
PAM-XIAMEN-WAFER-#O94 | 4″ | SSP, both oxidation | P100 | 525±25 | 100nmdry-oxygen oxidation | 0.001-0.002 | 100 |
PAM-XIAMEN-WAFER-#O95 | 4″ | SSP, single oxidation | P100 | 525±25 | 105nm | 0.001-0.005 | 50 |
PAM-XIAMEN-WAFER-#O96 | 4″ | SSP, both oxidation | P100 | 525±25 | 280nm | 0.001-0.005 | 25 |
PAM-XIAMEN-WAFER-#O97 | 2″ | SSP, both oxidation | P100 | 400±15 | 6um准 | 1-5 | 25 |
PAM-XIAMEN-WAFER-#O98 | 4″ | SSP, both oxidation | P100 | 525±25 | 1um | 0.001-0.005 | 70 |
PAM-XIAMEN-WAFER-#O99 | 6″ | SSP, both oxidation | P100 | 675um | 200nm | 1-50 | 119 |
PAM-XIAMEN-WAFER-#O100 | 6″ | SSP, both oxidation | P100 | 675um | 300nm | 1-50 | 75 |
PAM-XIAMEN-WAFER-#O101 | 6″ | SSP, both oxidation | N100 | 675±25 | 300nm | 1-100 | 75 |
PAM-XIAMEN-WAFER-#O102 | 4″ | SSP, both oxidation | P100 | 525±25 | 25nm | 1-10 | 22 |
PAM-XIAMEN-WAFER-#O103 | 4″ | SSP, both oxidation | P100 | 525±25 | 25nm | 0.001-0.002 | 16 |
PAM-XIAMEN-WAFER-#O104 | 4″ | SSP, single oxidation | P100 | 500±25 | 500nm | 1-10 | 3 |
PAM-XIAMEN-WAFER-#O105 | 4″ | SSP, both oxidation | N100 | 450±20 | 50nm | 0.01-0.02 | 25 |
PAM-XIAMEN-WAFER-#O106 | 4″ | SSP, both oxidation | N100 | 500um | 290nmNet Oxide | 0.01-0.02 | 100 |
PAM-XIAMEN-WAFER-#O107 | 4″ | SSP, both oxidation | N100 | 525±20 | 50nm | 0.01-0.02 | 1 |
For silicon wafer with dioxide, there are two kinds: Wet Oxide:Our Wet Thermal Oxidation process was designed for growing thicker oxide layers while maintaining the same level of quality you would expect from Dry Thermal Oxidation; Dry Oxide: Our ultra pure dry oxidation process is available for those applications requiring thinner oxides and is designed to ensure that you receive the highest quality film. We also offer custom spec to meet your requirement.
How is Thermal Oxide Applied to Silicon Wafers?
Regularly there are three detail application:
1/Grown Dry Oxidation – By default dry oxide is grown on just one side of the wafer.
2/Wet Oxidation Grown – Wave guides technology and Silicon on Insulator wafers (SOI) can benefit greatly from our thick Thermal Oxide layers. We provide thermal oxide up to 15um in thickness. Grown on both sides of the wafers by default.
3/Deposited CVD – When you cannot oxidize Silicon, then you can use Chemical Vapor Deposition to deposit the oxide on top of your substrate.
What is Purpose of Growing Thermal Oxide Onto Silicon?
There are below five main purpose: Gate oxide; Masking material during doping; Providing protection for the conductors; Isolate devices from each other; A dielectric for a capacitor
What are the Factors to affect Oxide Growth?
There are following factors:Using dry oxidation (Oxygen gas) or wet oxidation steam;Pressure;Temperature;Lattice Orientation (oxide grows faster on (111) oriented wafers then (100) oriented silicon wafers;
Relative keywords in papers :wet oxidation,dry oxidation,thermal oxide, thermal oxide calculator, thermal oxide thickness, thermal oxide wafer, thermal oxide properties, thermal oxide growth, thermal oxide furnace, thermal oxide dielectric constant, thermal oxide growth calculator,silicon wafer thermal oxide, thermal oxide wafer, thermal oxide si wafer, thermal oxidation of silicon, thermal oxidation of silicon wafer, thermal oxidation calculator, thermal oxidation unit
PAM-XIAMEN can offer you technology and wafer support,
for more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]