Silicon Wafer With Thermal Oxidation Or Wet And Dry Thermal Oxide (Sio2)

Silicon Wafer With Thermal Oxidation Or Wet And Dry Thermal Oxide (Sio2)

Silicon Wafer with thermal oxidation or Wet and Dry Thermal Oxide (SiO2) are in Stock,oxidation film(SiO2)can be custom

In Stock, But Not Limited To The Following.

Wafer No.cWafer SizePolished /oxidation sides Type/OrientationWafer Thickness(um)oxidation thicknessResistivity(Ohm.cm)Quantity(pcs)
PAM-XIAMEN-WAFER-#O011″SSP, both oxidationP100525±10300nm<0.005290
PAM-XIAMEN-WAFER-#O022″SSP, both oxidationP100500±203um1-1024
PAM-XIAMEN-WAFER-#O032″DSP, both oxidationN100285±151um1-1050
PAM-XIAMEN-WAFER-#O042″SSP, both oxidationP100430±10300nm<0.0055
PAM-XIAMEN-WAFER-#O053″SSP, both oxidation100400±102um>1000020
PAM-XIAMEN-WAFER-#O064″SSP, both oxidation100400±102um>1000025
PAM-XIAMEN-WAFER-#O074″SSP, both oxidationN111435-4652um(1.6um)0.01-0.01522
PAM-XIAMEN-WAFER-#O084″SSP, single oxidationP100500±101um3-821
PAM-XIAMEN-WAFER-#O094″SSP, both oxidationP111525±15500nm0.001-0.00918
PAM-XIAMEN-WAFER-#O104″SSP, single oxidation100400±10500nm3000-500023
PAM-XIAMEN-WAFER-#O114″DSP, both oxidationN100400±10500nm1-106
PAM-XIAMEN-WAFER-#O124″SSP, both oxidationN100500um500nm5-101
PAM-XIAMEN-WAFER-#O134″SSP, both oxidationN100500um280nm/320nm0.01-0.0520
PAM-XIAMEN-WAFER-#O144″SSP, both oxidationP100700±10300-310nm0.001-0.00218
PAM-XIAMEN-WAFER-#O154″SSP, both oxidationP100700±10305±5nmdry-oxygen oxidation<0.154
PAM-XIAMEN-WAFER-#O164″DSP, both oxidation100525±10200nm>1000019
PAM-XIAMEN-WAFER-#O174″SSP, both oxidation100500±25200nm>100003
PAM-XIAMEN-WAFER-#O184″SSP, both oxidationP100500±20150nm<0.00153
PAM-XIAMEN-WAFER-#O194″SSP, both oxidationP111500um50-80nm<0.052
PAM-XIAMEN-WAFER-#O202″DSP, both oxidation100 FZ500±50500±50nm5000-800025
PAM-XIAMEN-WAFER-#O216″SSP, both oxidationN100510±15200nm>600045
PAM-XIAMEN-WAFER-#O226″SSP, both oxidationP111645±25500nm5-2516
PAM-XIAMEN-WAFER-#O236″DSP, single oxidation100650um500nm>500015
PAM-XIAMEN-WAFER-#O246″SSP, both oxidationP100675±25500nm0.5-1001
PAM-XIAMEN-WAFER-#O256″SSP, both oxidation100625±252um23
PAM-XIAMEN-WAFER-#O266″SSP, both oxidationN100650±502.8um0.1-10050
PAM-XIAMEN-WAFER-#O2712″DSP, both oxidationP100775±252um±10%1-10025
PAM-XIAMEN-WAFER-#O288″SSP, both oxidation36
PAM-XIAMEN-WAFER-#O294″SSP, both oxidationP100500±25310nm0.01-0.0912
PAM-XIAMEN-WAFER-#O304″SSP, both oxidationP100515±15315nm0.008-0.01216
PAM-XIAMEN-WAFER-#O315″SSP, both oxidationN100525±15300nm+<0.00533
PAM-XIAMEN-WAFER-#O324″SSP, single oxidationP100525±10100nm0.001-0.0061
PAM-XIAMEN-WAFER-#O336″SSP, both oxidationP100675±258um±5%10-2048
PAM-XIAMEN-WAFER-#O3412″DSP, both oxidation120
PAM-XIAMEN-WAFER-#O356″SSP, both oxidation625±252um4
PAM-XIAMEN-WAFER-#O363″SSP, both oxidationP100375±25280±20nm<0.00529
PAM-XIAMEN-WAFER-#O374″SSP, both oxidation100 FZ525±201um>1007
PAM-XIAMEN-WAFER-#O384″SSP, both oxidationN100525±251um0.008-0.0213
PAM-XIAMEN-WAFER-#O396″DSP, both oxidationP100450±15300nm>500027
PAM-XIAMEN-WAFER-#O404″SSP, both oxidationN100500±106um1-1011
PAM-XIAMEN-WAFER-#O418″SSP, both oxidationP100700(>650)500nm0.5-100140
PAM-XIAMEN-WAFER-#O428″SSP, both oxidationP100725±25300nm1-10015
PAM-XIAMEN-WAFER-#O434″SSP, both oxidationN100525±25300nmdry-oxygen oxidation0.001-0.00525
PAM-XIAMEN-WAFER-#O443″SSP, both oxidation100 FZ400±102um>1000025
PAM-XIAMEN-WAFER-#O454″SSP, both oxidationP100525±25270-280nm0.01-0.021
PAM-XIAMEN-WAFER-#O464″SSP, both oxidationP111510-54025nm0.006-0.007525
PAM-XIAMEN-WAFER-#O478″SSP, both oxidation700um200nm-500nm390
PAM-XIAMEN-WAFER-#O488″SSP, both oxidation174
PAM-XIAMEN-WAFER-#O492″SSP, both oxidationN111400±15290nm0.01-0.0220
PAM-XIAMEN-WAFER-#O504″SSP, single oxidationP100525±25300nm0.01-0.093
PAM-XIAMEN-WAFER-#O514″SSP, single oxidationN100525±20305±5nm0.01-0.0210
PAM-XIAMEN-WAFER-#O523″SSP, both oxidationN100381±20300nmdry-oxygen oxidation<0.00520
PAM-XIAMEN-WAFER-#O534″SSP, both oxidationN100450±25280±20nm0.01-0.0256
PAM-XIAMEN-WAFER-#O543SSP, both oxidationP100380±2090nm1-1018
PAM-XIAMEN-WAFER-#O554″SSP, both oxidationP100525±25280nm>1000023
PAM-XIAMEN-WAFER-#O564″SSP, both oxidationP100525±25300nmdry-oxygen oxidation0.001-0.0055
PAM-XIAMEN-WAFER-#O575″SSP, both oxidationN100525±15280nm<0.00530
PAM-XIAMEN-WAFER-#O585″SSP, both oxidationN100525±25280nm0.001-0.00525
PAM-XIAMEN-WAFER-#O594″SSP, single oxidationN100520±20280±2nm0.01-0.0225
PAM-XIAMEN-WAFER-#O604″SSP, single oxidationN100450±25300±5nmdry-oxygen oxidation0.01-0.0219
PAM-XIAMEN-WAFER-#O614″SSP, single oxidationN100450±25300±5nm0.01-0.0225
PAM-XIAMEN-WAFER-#O624″SSP, single oxidationN100520±20283-290nm0.01-0.0225
PAM-XIAMEN-WAFER-#O634″SSP, single oxidationN100520±20300-305nm0.002-0.00420
PAM-XIAMEN-WAFER-#O644″SSP, both oxidationP100525±25100nm1-1017
PAM-XIAMEN-WAFER-#O654″SSP, single oxidationN100510±10500nm0.01-0.026
PAM-XIAMEN-WAFER-#O664″SSP, single oxidationN100525±25100nm0.002-0.0044
PAM-XIAMEN-WAFER-#O674″DSP, both oxidationN100750±20500nm2-109
PAM-XIAMEN-WAFER-#O684″SSP, single oxidationP100500±10100nm3-819
PAM-XIAMEN-WAFER-#O694″SSP, single oxidationP100500±10500nm3-820
PAM-XIAMEN-WAFER-#O702″SSP, both oxidationP100675±20285nm>1025
PAM-XIAMEN-WAFER-#O714″SSP, both oxidationP100525±25285nm0.01-0.0228
PAM-XIAMEN-WAFER-#O728″SSP, both oxidationP100725±25500nm0.1-10068
PAM-XIAMEN-WAFER-#O734″DSP, both oxidationP100480±10300nm1-1013
PAM-XIAMEN-WAFER-#O745″SSP, both oxidationN100600-650285nm0.003-0.005100
PAM-XIAMEN-WAFER-#O755″SSP, both oxidationN100500-550285nm<0.004175
PAM-XIAMEN-WAFER-#O764″SSP, both oxidationP100525±25275nm0.001-0.00525
PAM-XIAMEN-WAFER-#O774″SSP, both oxidationP100485±25275nm0.01-0.02150
PAM-XIAMEN-WAFER-#O784″SSP, both oxidationN100525±2590nm0.002-0.00491
PAM-XIAMEN-WAFER-#O794″SSP, both oxidationP100525±25285nm0.001-0.00525
PAM-XIAMEN-WAFER-#O804″SSP, both oxidationP100525±25271-282nm0.01-0.0250
PAM-XIAMEN-WAFER-#O814″SSP, both oxidationP100525±25275nm0.001-0.005200
PAM-XIAMEN-WAFER-#O824″SSP, both oxidationP100525±25273-282nm0.001-0.00550
PAM-XIAMEN-WAFER-#O835″SSP, single oxidationN100525±25295-300nm0.0216
PAM-XIAMEN-WAFER-#O846″SSP, both oxidation675±25300nm1-3023
PAM-XIAMEN-WAFER-#O854″SSP, both oxidationN100475-525100nm0.01-0.02125
PAM-XIAMEN-WAFER-#O864″SSP, both oxidationN100450um280nm0.02-0.025100
PAM-XIAMEN-WAFER-#O874″SSP, both oxidationP100500±10280nm<0.001575
PAM-XIAMEN-WAFER-#O882″SSP, both oxidationN100280±15280nm<0.0525
PAM-XIAMEN-WAFER-#O892″SSP, both oxidationP100400±15280nm<0.001525
PAM-XIAMEN-WAFER-#O903″SSP, both oxidationN100381±20280nm<0.00595
PAM-XIAMEN-WAFER-#O916″SSP, both oxidationP100675±10300nm1-10047
PAM-XIAMEN-WAFER-#O926″SSP, both oxidationP100675±25300nm10-202
PAM-XIAMEN-WAFER-#O934″SSP, both oxidationP100525±25280nmdry-oxygen oxidation0.01-0.02100
PAM-XIAMEN-WAFER-#O944″SSP, both oxidationP100525±25100nmdry-oxygen oxidation0.001-0.002100
PAM-XIAMEN-WAFER-#O954″SSP, single oxidationP100525±25105nm0.001-0.00550
PAM-XIAMEN-WAFER-#O964″SSP, both oxidationP100525±25280nm0.001-0.00525
PAM-XIAMEN-WAFER-#O972″SSP, both oxidationP100400±156um准1-525
PAM-XIAMEN-WAFER-#O984″SSP, both oxidationP100525±251um0.001-0.00570
PAM-XIAMEN-WAFER-#O996″SSP, both oxidationP100675um200nm1-50119
PAM-XIAMEN-WAFER-#O1006″SSP, both oxidationP100675um300nm1-5075
PAM-XIAMEN-WAFER-#O1016″SSP, both oxidationN100675±25300nm1-10075
PAM-XIAMEN-WAFER-#O1024″SSP, both oxidationP100525±2525nm1-1022
PAM-XIAMEN-WAFER-#O1034″SSP, both oxidationP100525±2525nm0.001-0.00216
PAM-XIAMEN-WAFER-#O1044″SSP, single oxidationP100500±25500nm1-103
PAM-XIAMEN-WAFER-#O1054″SSP, both oxidationN100450±2050nm0.01-0.0225
PAM-XIAMEN-WAFER-#O1064″SSP, both oxidationN100500um290nmNet Oxide0.01-0.02100
PAM-XIAMEN-WAFER-#O1074″SSP, both oxidationN100525±2050nm0.01-0.021

 

 

For silicon wafer with dioxide, there are two kinds: Wet Oxide:Our Wet Thermal Oxidation process was designed for growing thicker oxide layers while maintaining the same level of quality you would expect from Dry Thermal Oxidation; Dry Oxide: Our ultra pure dry oxidation process is available for those applications requiring thinner oxides and is designed to ensure that you receive the highest quality film. We also offer custom spec to meet your requirement.

How is Thermal Oxide Applied to Silicon Wafers?
Regularly there are three detail application:
1/Grown Dry Oxidation – By default dry oxide is grown on just one side of the wafer.
2/Wet Oxidation Grown – Wave guides technology and Silicon on Insulator wafers (SOI) can benefit greatly from our thick Thermal Oxide layers. We provide thermal oxide up to 15um in thickness. Grown on both sides of the wafers by default.
3/Deposited CVD – When you cannot oxidize Silicon, then you can use Chemical Vapor Deposition to deposit the oxide on top of your substrate.
What is Purpose of Growing Thermal Oxide Onto Silicon?
There are below five main purpose: Gate oxide; Masking material during doping; Providing protection for the conductors; Isolate devices from each other; A dielectric for a capacitor

What are the Factors to affect Oxide Growth?
There are following factors:Using dry oxidation (Oxygen gas) or wet oxidation steam;Pressure;Temperature;Lattice Orientation (oxide grows faster on (111) oriented wafers then (100) oriented silicon wafers;

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PAM-XIAMEN can offer you technology and wafer support,
for more information, please visit our website: https://www.powerwaywafer.com,
send us email at [email protected] and [email protected]

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