Silicon Wafer

Silicon Wafer         
           
Si wafer Substrate -Silicon
QuantityMaterialOrientation.DiameterThicknessPolishResistivityType DopantNcMobilityEPD
PCS(mm)(μm)Ω·cm a/cm3cm2/Vs/cm2
1-100SiN/A25.4280SSP1-100P/bN/AN/AN/A
1-100SiN/A25.4280SSP1-100P/b(1-200)E16N/AN/A
1-100Si(100)25.4525N/A<0.005N/AN/AN/AN/A
1-100Si(100)25.4525±25SSP<0.005N/AN/AN/AN/A
1-100Si with Oxide layer(100)25.4525±25SSP<0.005N/AN/AN/AN/A
1-100Si(100)25.4350-500SSP1~10N/AN/AN/AN/A
1-100Si(100)25.4400±25P/E<0.05P/N/AN/AN/A
1-100Si(100)50.4400±25P/E<0.05P/N/AN/AN/A
1-100p-Si with 90 nm SiO2(100)50.4500±25P/E<0.05P/N/AN/AN/A
1-100n-Si with 90 nm SiO2(100)50.4500±25P/E<0.05N/N/AN/AN/A
1-100p-Si with 285 nm SiO2(100)50.4500±25P/E<0.05N/N/AN/AN/A
1-100n-Si with 285 nm SiO2(100)50.4500±25P/E<0.05N/N/AN/AN/A
1-100Si with electrodes(100)50.8400N/A<0.05N/p1E14-1E15N/AN/A
1-100Si(100)50.8275SSP1~10N/AN/AN/AN/A
1-100Si(100)50.8275±25SSP1~10N/pN/AN/AN/A
1-100Si(111)50.8350±15SSP>10000N/AN/AN/AN/A
1-100Si(100)50.8430±15SSP5000-8000N/AN/AN/AN/A
1-100Si(111)50.8410±15SSP1~20N/AN/AN/AN/A
1-100Si(111)50.8400-500SSP>5000N/AN/AN/AN/A
1-100Si(100)50.8525±25SSP1~50N/AN/AN/AN/A
1-100Si(100)50.8500±25SSP1~10N  PN/AN/AN/A
1-100Si(100)50.8500±25P/P>700P/N/AN/AN/A
1-100Si(100)76.2400±25P/E<0.05P/N/AN/AN/A
1-100p-Si with 90 nm SiO2(100)76.2500±25P/E<0.05P/N/AN/AN/A
1-100n-Si with 90 nm SiO2(100)76.2500±25P/E<0.05N/N/AN/AN/A
1-100p-Si with 285 nm SiO2(100)76.2500±25P/E<0.05N/N/AN/AN/A
1-100n-Si with 285 nm SiO2(100)76.2500±25P/E<0.05N/N/AN/AN/A
1-100Si(100)100625SSP>10000N/AN/AN/AN/A
1-100Si(100)100525SSPN/AN/PN/AN/AN/A
1-100Si(100)100320SSP>2500ohm·cmP/bN/AN/AN/A
1-100Si(100)100N/ASSP10~30N/pN/AN/AN/A
1-100Si(100)100505±25SSP0.005-0.20N/P-dopedN/AN/AN/A
1-100Si(100)100381SSP0.005-0.20N/P-dopedN/AN/AN/A
1-100Si(100)100525DSP1-100N/AN/AN/AN/A
1-100Si(100)100525DSP1-100N/AN/AN/AN/A
1-100Si(100)100625±25SSP0.001-0.004N/AN/AN/AN/A
1-100Si with Oxide layer 3000A(100)100675±25SSP0.001-0.004N/AN/AN/AN/A
1-100Si(100)100625±25SSP0.001-0.004N/AN/AN/AN/A
1-100Si(100)100N/ASSPN/AP/bN/AN/AN/A
1-100Si(100)100500±25SSP1~25N/AN/AN/AN/A
1-100Si(100)100500SSP1~10P/N/AN/AN/A
1-100Si(100)100500±25P/E1-10N/N/AN/AN/A
1-100Si(100)100500/525±25P/P1-10N/N/AN/AN/A
1-100Si(100)100500/525±25N/AN/AN/AN/AN/AN/A
1-100Si(100)100500±25P/P>700P/N/AN/AN/A
1-100Si(100)150675±25N/A 0.001-0.004P/bN/AN/AN/A
1-100Si(100)150675±25N/A 0.001-0.004P/bN/AN/AN/A
1-100Si(100)/(111)150550~650DSPN/AN/AN/AN/AN/A
1-100Si(100)/(111)150600-700SSP<0.5N/AN/AN/AN/A
1-100Si(111)150400±25DSP<50N/N/AN/AN/A
1-100Si(100)150545P/E1-3N/N/AN/AN/A
1-100Si(100)200725±25SSP1~25P/N/AN/AN/A

As a Silicon wafer supplier,we offer Silicon carbide list for your reference, if you need price detail, please contact our sales team.

Note:

  • As manufacturer, we also accept small quantity for researcher or foundry.
  • Delivery time: it depends on stock we have, if we have stock, we can ship to you soon.