12″ Silicon Wafers 300mm TOX ( Si Thermal Oxidation Wafer )

12″ Silicon Wafers 300mm TOX ( Si Thermal Oxidation Wafer )

PAM-XIAMEN Offer 300mm Silicon Wet or Dry Thermal Oxide/Dioxide Wafers (Si+SiO2).

Thermal oxide wafer or silicon dioxide wafer is a bare silicon wafer with silicon oxide layer grown by dry or wet oxidation process.

 

  • Description

Product Description

PAM-XIAMEN Offers 12″ Silicon Wafers 300mm TOX ( Si Thermal Oxidation Wafer )

 

PAM-XIAMEN Offer 300mm Silicon Wet or Dry Thermal Oxide/Dioxide Wafers (Si+SiO2).

Thermal oxide wafer or silicon dioxide wafer is a bare silicon wafer with silicon oxide layer grown by dry or wet oxidation process.

Compared with CVD oxide layer, it has higher uniformity, better compactness, higher dielectric strength and better quality:

 

Dry oxidation silicon wafer: Dry oxygen oxidation

silicon reacts with oxygen at the temperature of 850-1200 ℃,

the oxidation growth rate is low but the quality is good,

so it can be used for MOS insulated gate growth. Oxide layer is 10nm~300nm.

 

Wet oxygen oxidation wafer: At high temperature, water vapor is used to

enter the furnace tube and form oxide layer on the surface of silicon wafer.

The density of wet oxygen oxidation is slightly worse than that of dry oxygen oxidation,

but the advantage of wet oxygen oxidation is that it has a higher growth rate,

which is suitable for the film growth above 500 nm. Wet oxidation capacity: 100nm~6um.

Parameters Value
Type of ingot Grown according to the Czochralski method
Diametr, mm 300 ± 0,2
Wafers Life time, month 12
Conductivity type P
Dopant B (boron)
Oxigen max, OLD-PPMA 40
Carbon , PPMA 1
The exclusion of the edge zone, mm 3
Crystallographic orientation <100>
Deviation of surface orientation from a given crystallographic plane, degrees 0,5
Volume resistivity, Ohm · cm 10-40
The number of dislocations, cm-2 0
The number of point etching defects, cm-2 0
The number of point oxidative defects, cm -2 500
The maximum iron content in the volume, E10AT/CC 10
Primary Notch yes
Notch Location 110
Notch size, mm 2,3
Notch Form V
Wafer thickness, microns 775±25
Type of marking Laser
Marking Location back side
Edge profile By SEMI T / 4
Front scratches absent
Total wafer thickness change (TTV), microns 5
Deflection, microns 60
Wafers are oxidized to a thickness, microns 0,1-1
The number of particles on a surface larger than 0.09 microns 50
Contamination of the back side absent
Surface content of aluminium, E10AT/CM2 1
Surface content of calcium, E10AT/CM2 1
Surface content of chromium, E10AT/CM2 1
Surface content of copper, E10AT/CM2 1
Surface content of iron, E10AT/CM2 1
Surface content of potassium, E10AT/CM2 1
Surface content of natrium, E10AT/CM2 1
Surface content of nickel, E10AT/CM2 1
Surface content of zinc, E10AT/CM2 1
Requirements for the accuracy of flatness, microns 0,3
The exclusion of the edge zone when measuring flatness, mm 3

 

Packing requirements:

Parameter  
Type of packaging MW300GT-A
Inner Container Material Polyethylene
Outer Packing Material Aluminum
Number of pieces in one package 25
Reusability yes

 

FAQ: 

Could you please check if accept the packaging MW300GT-A as attached picture?

Answer:

Yes, please go ahead.

packaging MW300GT-A for 300 mm Silicon Wafers 300mm TOX (Si Thermal Oxidation Wafer)

packaging MW300GT-A for 300 mm Silicon Wafers 300mm TOX (Si Thermal Oxidation Wafer)

 

 

 

 

 

 

 

 

packaging MW300GT-A for 300 mm Silicon Wafers 300mm TOX (Si Thermal Oxidation Wafer)

packaging MW300GT-A for 300 mm Silicon Wafers 300mm TOX (Si Thermal Oxidation Wafer)

 

 

 

 

 

 

 

 

PAM-XIAMEN can offer you technology and wafer support.

For more information, please visit our website: https://www.powerwaywafer.com/silicon-wafer,

send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

 

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