12″ Silicon Wafers 300mm TOX ( Si Thermal Oxidation Wafer )

12″ Silicon Wafers 300mm TOX ( Si Thermal Oxidation Wafer )

PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.

  • Description

Product Description

PAM-XIAMEN offers 300mm silicon oxide wafer and dioxide wafer. Thermal oxide silicon wafer or silicon dioxide wafer is a bare silicon wafer with oxide layer grown by dry or wet oxidation process. The thermal oxide layer of the silicon wafer is usually grown in a horizontal tube furnace, and the silicon wafer oxide temperature range is generally 900 ℃ ~ 1200 ℃. Compared with CVD oxide layer, silicon wafer oxide layer has higher uniformity, better compactness, higher dielectric strength and better quality.

 

1. Parameters of Silicon Oxide Wafer

ParametersValue
Type of ingotGrown according to the Czochralski method
Diametr, mm300 ± 0,2
Wafers Life time, month12
Conductivity typeP
DopantB (boron)
Oxigen max, OLD-PPMA40
Carbon , PPMA1
The exclusion of the edge zone, mm3
Crystallographic orientation<100>
Deviation of surface orientation from a given crystallographic plane, degrees0,5
Volume resistivity, Ohm · cm10-40
The number of dislocations, cm-20
The number of point etching defects, cm-20
The number of point oxidative defects, cm -2500
The maximum iron content in the volume, E10AT/CC10
Primary Notchyes
Notch Location110
Notch size, mm2,3
Notch FormV
Wafer thickness, microns775±25
Type of markingLaser
Marking Locationback side
Edge profileBy SEMI T / 4
Front scratchesabsent
Total wafer thickness change (TTV), microns5
Deflection, microns60
Wafers are oxidized to a thickness, microns0,1-1
The number of particles on a surface larger than 0.09 microns50
Contamination of the back sideabsent
Surface content of aluminium, E10AT/CM21
Surface content of calcium, E10AT/CM21
Surface content of chromium, E10AT/CM21
Surface content of copper, E10AT/CM21
Surface content of iron, E10AT/CM21
Surface content of potassium, E10AT/CM21
Surface content of natrium, E10AT/CM21
Surface content of nickel, E10AT/CM21
Surface content of zinc, E10AT/CM21
Requirements for the accuracy of flatness, microns0,3
The exclusion of the edge zone when measuring flatness, mm3

 

Packing requirements:

Parameter 
Type of packagingMW300GT-A
Inner Container MaterialPolyethylene
Outer Packing MaterialAluminum
Number of pieces in one package25
Reusabilityyes

 

2. Oxidation Methods

Dry oxidation and wet oxidation are the most important methods for growing silicon on oxide wafer.

2.1 Dry oxidation silicon wafer

Dry oxygen oxidation silicon reacts with oxygen at the temperature of 850-1200 ℃, the rate of thermal oxide growth silicon wafers is low but the quality is good, so it can be used for MOS insulated gate growth. Silicon wafer oxide thickness is 10nm~300nm.

2.2 Wet oxygen oxidation wafer 

At high temperature, water vapor is used to enter the furnace tube and form oxide layer on the surface of silicon wafer. The density of wet oxygen oxidation is slightly worse than that of dry oxygen oxidation, but the advantage of wet oxygen oxidation is that it has a higher growth rate, which is suitable for the film growth above 500 nm. Wet oxidation capacity: 100nm~6um.

During the silicon wafer oxidation process, the thermal silicon oxide wafer is an excellent dielectric layer as an insulator. In many silicon-based devices, the thermal oxide layer plays an important role as a doping prevention layer and a surface dielectric.

 

3. FAQ: 

Could you please check if accept the packaging MW300GT-A as attached picture?

— Yes, please go ahead.

packaging MW300GT-A for 300 mm Silicon Wafers 300mm TOX (Si Thermal Oxidation Wafer)

packaging MW300GT-A for 300 mm Silicon Wafers 300mm TOX (Si Thermal Oxidation Wafer)

 

 

 

 

 

 

 

 

packaging MW300GT-A for 300 mm Silicon Wafers 300mm TOX (Si Thermal Oxidation Wafer)

packaging MW300GT-A for 300 mm Silicon Wafers 300mm TOX (Si Thermal Oxidation Wafer)

 

 

 

 

 

 

 

 

PAM-XIAMEN can offer you technology and wafer support.

For more information, please visit our website: https://www.powerwaywafer.com/silicon-wafer,

send us email at [email protected] and [email protected]

 

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2″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

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4″ Monocrystalline Silicon Wafer with Thermal oxide 20nm

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6″ Monocrystalline Silicon Wafer with Thermal Oxide 20nm

2″ Silicon Oxide Wafer

3″ Silicon Oxide Wafer

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