Cz Mono-Crystalline Silicon

PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.

  • Description

Product Description

PAM-XIAMEN, a monocrystalline bulk silicon producer, can offer <100>, <110> and <111> monocrystalline silicon wafers with N&P dopant in 76.2~200 mm, which are grown by CZ method. The Czochralski method is a crystal growth method, referred to as the CZ method. It is integrated in a straight-tube heat system, heated by graphite resistance, melts the polysilicon contained in a high-purity quartz crucible, and then inserts the seed crystal into the surface of the melt for welding. After that, the rotating seed crystal is lowered and melted. The body is infiltrated and touched, gradually raised, and finished or pulled through the steps of necking, necking, shouldering, equal diameter control, and finishing.

1. Specifications for CZ Monocrystalline Silicon Wafers

Type Conduction Type Orientation Diameter(mm) Conductivity(Ω•cm)
CZ N&P <100><110>&<111> 76.2-200 1-300
MCZ N&P <100><110>&<111> 76.2-200 1-300
Heavy-doping N&P <100><110>&<111> 76.2-200 0.001-1
  Diameter(mm) Thickness(um)
Wafer 76.2-200 ≥160

 

2. Classification of CZ Monocrystalline Silicon Wafer

2.1 CZ-Silicon

The heavily/lightly-doped CZ mono-crystalline silicon is suitable for fabrication of various integrated circuits (IC), diodes, triodes, green-energy solar panel. During the monocrystalline silicon production, the special elements (such as Ga, Ge) can be added to produce the high-efficiency, radiation-resistant and anti-degenerating solar cell materials for special components.

CZ heavily doped crystal

Adopting the special doping device and CZ monocrystalline silicon wafer technology, the heavily-doped (P, Sb, As) CZ monocrystalline silicon thin film with very low resistivity can be produced, is mainly used as the lining material for epitaxial wafers, and is used to produce the special electronic devices for LSI switch power supplies, Schottky diodes and field-control high-frequency power electronic devices.

<110> Special orientation CZ-silicon

The <110>monocrystalline silicon has the original orientation <110>, the further processing for orientation adjustment is unnecessary; the <110>monocrystalline silicon crystal structure has the perfect characteristics, and low oxygen & carbon contents, is a new solar cell material and can be used the new generation cell material.

2.2 MCZ-Monocrystalline Silicon

The magnetic-field is used in the czochralski process to produce the CZ mono-crystalline silicon wafers with the characteristics of low oxygen content and high resistivity uniformity; the MCZ silicon is suitable to produce the silicon materials for various ICs, discrete devices and low-oxygen solar batteries.

Our advantages at a glance

1.Advanced epitaxy growth equipment and test equipment.

2.Offer the highest quality with low defect density and good surface roughness.

3.Strong research team support and technology support for our customers

 

4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-1

4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-2

4″ CZ Prime Silicon Wafer Thickness = 200 ± 25 µm-3

4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm

4″ CZ Prime Silicon Wafer Thickness 525±25µm

4″ CZ Prime Silicon Wafer Thickness 525 ± 25 µm-2

4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm-3

4″CZ Prime Silicon Wafer Thickness 525 ± 25 µm-4

4″ CZ Prime Silicon Wafer Thickness 1500±25μm

4″ CZ Prime Silicon Wafer Thickness 200um.

8″CZ Prime Silicon Wafer

8″CZ Prime Silicon Wafer-1

8″CZ Prime Silicon Wafer-2

6″CZ Prime Silicon Wafer

6″CZ Prime Silicon Wafer-1

6″CZ Prime Silicon Wafer-2

6″CZ Prime Silicon Wafer-3

6″ CZ Si Wafer

6″ CZ Silicon Wafer

4″ CZ Prime Silicon Wafer

4″CZ Prime Silicon Wafer-2

4″CZ Prime Silicon Wafer-3

4″ CZ Prime Silicon Wafer

4″CZ Prime Silicon Wafer-2

4″CZ Prime Silicon Wafer-6

4″CZ Prime Silicon Wafer-7

4″CZ Prime Silicon Wafer-8

4″CZ Prime Silicon Wafer-9

4″CZ Prime Silicon Wafer-10

4″CZ Prime Silicon Wafer-11

4″CZ Prime Silicon Wafer-12

4″CZ Prime Silicon Wafer-13

4″CZ Prime Silicon wafer-14

4″CZ Prime Silicon wafer-15

4″CZ Prime Silicon wafer-16

2″CZ Prime Silicon Wafer

2″CZ Prime Silicon Wafer-1

2″CZ Prime Silicon Wafer-2

2″CZ Prime Silicon Wafer-3

2″CZ Prime Silicon Wafer-4

3″CZ Prime Silicon Wafer

3″CZ Prime Silicon Wafer-1

6″ CZ Prime Wafer 1

12″ Silicon Wafers 300mm TOX ( Si Thermal Oxidation Wafer )

12″ Prime Grade Silicon Wafer

4″ CZ Epitaxial Prime Silicon Wafer-3

2″ Silicon Oxide Wafer

3″ Silicon Oxide Wafer

4″ Silicon Oxide Wafer

3″ CZ Si Lapped Wafer

8″ CZ Silicon Wafer SSP

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