PAM XIAMEN offers 1″&1.5″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
25.4
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
25.4
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
25.4
N
Phos
CZ
-100
225-275
P/P
PRIME
25.4
N
Phos
CZ
-100
225-275
P/P
PRIME
25.4
N
Phos
CZ
-100
250-300
P/E
PRIME
25.4
N
Phos
CZ
-100
250-300
P/E
PRIME
25.4
P
Boron
CZ
-100
1-20
43768
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
40-60
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
80-100
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
140-160
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
225-275
P/P
PRIME
25.4
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
25.4
P
Boron
CZ
-100
1-20
250-300
P/E
PRIME
25.4
Intrinsic
Undoped
FZ
-100
> 20000
275-325
P/E
PRIME
25.4
N
Sb
CZ
-100
.5-40
200-250
P/E
PRIME
25.4
N
Sb
CZ
-100
5-40
225-275
P/E
PRIME
25.4
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
25.4
Shipping Cassette
ePak
Holds25Wafers
Clean Room
38.1
Single Wafer Shipper
ePak
Lid/Base/Spring
Holds1Wafer
Clean Room
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material [...]
2019-02-27meta-author
For single photon detection technology, in addition to the traditional InP/InGaAs SPAD, new material systems such as low noise material systems constructed from Sb based digital alloys, multi multiplication InP/InGaAs SPAD using ionization engineering, and InAlAs/InGaAs SPAD have also been developed. PAM-XIAMEN can provide InP [...]
2023-07-12meta-author
We offer LT-GaAs wafer for THz, detector, ultra-fast-optical experiments and other applications.
1. 2″ LT-GaAs Wafer Specification:
Item
Specifications
Diamater(mm)
Ф 50.8mm ± 1mm
Thickness
1-2um or 2-3um
Marco Defect Density
≤ 5 cm-2
Resistivity(300K)
>108 Ohm-cm
Carrier
<1ps
Dislocation Density
<1×106cm-2
Useable Surface Area
≥80%
Polishing
Single side polished
Substrate
GaAs substrate
Remark: Other conditions:
1) GaAs substrate should be undoped/semi-insulating with (100)orientation.
2) Growth temperature: ~ 200-250 C
2. [...]
PAM XIAMEN offers 4″ Prime Silicon Wafer.
Silicon wafers, per SEMI Prime,
P/P 4″Ø×300±25µm,
p-type Si:B[100]±0.5°, Ro=(5-10)Ohmcm,
TTV<10µm, Bow<40µm, Warp<40µm,
Both-sides-polished, SEMI Flats (two),
Sealed in Empak cassette.
Primary Flat: 32.5±-2.5, 110±1°。
Secondary Flat: 18±2,90°±5°
For more information, please visit our website: https://www.powerwaywafer.com,
send [...]
2019-07-02meta-author
SPCW is a counting module based on CZT detector. It integrates CZT detector, high gain charge sensitive amplifier and SK shaping circuit. The radiation dose rates ranges from 0.1μGy/h~1Gy/h will be its guest.
1. Specification of SPCW Wide Range Radiation Doses Module
Energy range
30KeV~1.5MeV (standard) / [...]
2019-04-23meta-author
PAM XIAMEN offers SrTiO3 single crystal.
SrTiO3 single crystal provides a good lattice match to most of materials with Perovskite structure. It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]
2019-05-14meta-author