Single-crystal growth and thermoelectric properties of Ge(Bi,Sb)4Te7

  • Home
  • News
  • Single-crystal growth and thermoelectric properties of Ge(Bi,Sb)4Te7

The thermoelectric properties between 10 and 300 K and the growth of single crystals of n-type and p-type GeBi4Te7, GeSb4Te7 and Ge(Bi1−xSbx)4Te7 solid solution are reported. Single crystals were grown by the modified Bridgman method, and p-type behavior was achieved by the substitution of Bi by Sb in GeBi4Te7. The thermopower in the Ge(Bi1−xSbx)4Te7 solid solution ranges from −117 to +160 μV K−1. The crossover from n-type to p-type is continuous with increasing Sb content and is observed at x ≈0.15. The highest thermoelectric efficiencies among the tested n-type and p-type samples are ZnT = 0.11 and ZpT = 0.20, respectively. For an optimal n–p couple in this alloy system the composite figure of merit is ZnpT = 0.17 at room temperature.

Source:IOPscience

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

2019-10-28

Share this post

Related Posts

GaAs/AlAs wafer

GaAs/AlAs wafer     We provide wafer of N+ or P+ GaAs epi with AlAs layer on N+ or P+ GaAs substrate as follows:     No.1 spec:2-inch p+ GaAs Epi with AlAs layer on p+ GaAs substrate.    Structure(from bottom to top):   Layer0: 350 um p+ semi-conducting GaAs substrate, >E18 doping, any dopant [...]

2014-11-21meta-author
Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes The spontaneous emission characteristics of green- and red-emitting InGaN quantum wells (QWs) on ternary InGaN substrate are analyzed, and the radiative recombination rates for the QWs grown on ternary substrate were compared with those of InGaN QWs on [...]

2014-04-02meta-author
Si-doped GaN Epitaxial template on sapphire

Si-doped GaN Epitaxial template on sapphire    Xiamen Powerway Advanced Material Co.,Ltd (PAM-XIAMEN), the leading developer and supplier of compound semiconductor crystal and wafer, provide GaN wafer serie,including Si-doped GaN Epitaxial template on sapphire:   GaN Template2″ Specification Purity Si-doped GaN Epitaxial template on sapphire Orientation -1 Film thickness >5.0µm ± 0.25µm Diameter 50.8 ± 0.1mm Edge exclusion <1mm Useable [...]

2014-06-19meta-author
What are D263 Glass Wafers used for?

PAM XIAMEN offers D263 Glass Wafers. Please send us email at sales@powerwaywafer.com if you need other specs and quantity.           Our clients use our Schott D263 glass for the following applications: Touch Panel Controls Liquid Crystal Displays (LCD) Electroluminescent Displays Solar Cell Protective Glass Diam Type Dopant Orien Res (Ohm-cm) Thick (um) Polish Grade 50.8mm 550um DSP 76.2mm 550um DSP 100mm 500um DSP 150mm 550um DSP 200mm 500um DSP 300mm 500um DSP For more information, please visit our [...]

2019-02-27meta-author
3″ Silicon Wafer-13

PAM XIAMEN offers 3″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:Sb [111-2.5°] 3″ 300 P/E 0.014-0.018 SEMI Prime n-type Si:Sb [111-3.5°] 3″ 380 P/E 0.014-0.016 SEMI Prime n-type Si:Sb [111-3°] 3″ 300 P/E 0.011-0.016 SEMI Prime n-type Si:Sb [111] ±0.5° 3″ 300 P/P 0.01-0.20 SEMI Prime n-type Si:Sb [111] 3″ 380 P/E 0.008-0.025 SEMI Prime n-type Si:As [111-0.5°] 3″ 380 P/P 0.003-0.005 SEMI Prime n-type Si:As [111] 3″ 380 P/E/P 0.002-0.005 SEMI Prime n-type Si:As [111-2.5°] 3″ 380 P/E 0.002-0.005 SEMI Prime n-type Si:As [111-4°] 3″ 380 P/E 0.002-0.005 SEMI Prime For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material [...]

2019-03-06meta-author
Test grade silicon wafers-1

PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates!   Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 4 DSP Antimony N+ 100 32,5 ± 2,5 110 ± 1  180 ±   5.0 °,  18.00 ±  2.00 mm 0.0 ± 1.0 ° 0.010 – 0.020 Ohmcm 100.0 ± 0.5 mm 340 ± 10 µm 2 4 DSP Antimony N+ 100 32,5 [...]

2019-02-25meta-author