PAM XIAMEN offers Single crystal LiAlO2.
LiAlO2 is a potential substrate for III-V nitride thin films due to its excellent lattice mismatch to GaN ( <1.4 % at <100> ), chemical stability at high temperature and cost effective than ZnO. LiAlO2 crystal can replace ZnO and sapphire as optical substrate also. PAM XIAMEN can supply LiAlO2 wafer up to 2″ diameter.
LiAlO2 (100 ) 2″ dia. x 0.5mm, 1sp
LiAlO2 (001 ) 10x10x0.5mm, 2sp
LiAlO2 (100 ) 10x10x0.5mm, 1sp
LiAlO2 (100 ) 10x10x0.5mm, 2sp
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.