PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name a few. Customized crystal growth and precision machining services are available. Please contact us today to discuss your project requirements.
By working with PAM XIAMEN, you can get customized crystal substrates, single crystals, and wafers to meet your specific requirements. Even for customized crystal products, you will still appreciate the short lead time and favorable prices from PAM XIAMEN when compared to most other crystals suppliers. This is why research institutions and technology companies around the world have switched from other suppliers to PAM XIAMEN when they have needs for crystals, wafers and substrates.
Contact us today to order monolithic single crystals, wafers and crystal substrates that meet your technical specifications.
2 inch Sapphire Wafer C-Plane Single or Double Side Polish Al2O3 Single Crystal
10 mm x 10 mm, Undoped, N-type, Gallium Nitride Single Crystal Substrate C plane (0001)
4 inch Sapphire Wafer C-Plane Single or Double Side Polish Al2O3 Single Crystal
2 inch undoped N-type 4.5 um Gallium Nitride Template on Sapphire
2 in Mg-doped P-type Gallium Nitride GaN Template on Sapphire
2 inch Aluminum Nitride AlN Template on Sapphire (0001) Semi-Insulating Type 4000~5000nm
6 inch Sapphire Wafer C-Plane Single Side Polish Al2O3 Single Crystal
3 inch Sapphire Wafer C-Plane Single or Double Side Polish Al2O3 Single Crystal
2 in ~10 Ohm/Sq ITO Coated Sapphire Wafer DSP
Moissanite Raw Crystal Silicon Carbide Crystals (D-E-F color)
1 in x 1 in Monolayer Graphene Film on Cu Foil Substrate
MgO Magnesium Oxide Single Crystal Substrate
10 mm x 10 mm Fe-Doped Gallium Nitride Single Crystal C-Plane
2 in Semi-Insulating Fe-doped GaN 1.8 um Gallium Nitride Template on Sapphire (0001)
2 in Si-doped N-type 4.5um Gallium Nitride Template on Sapphire DSP
2 in Si-doped N-type Gallium Nitride Template on Sapphire SSP
5 x 10 mm M plane (1-100) Undoped N-type Gallium Nitride Single Crystal
4 in N-type Si-doped 4.5um Gallium Nitride Template on Sapphire
AlGaN/GaN HEMT on 2 inch Si Wafer (GaN/Si)
PMNT (PMN-PT) Piezoelectric Crystal (001), Pb(Mg1/3Nb2/3)O3-PbTiO3, 10 x 10 x 0.5mm, SSP
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.