PAM XIAMEN offers Single Crystals, Wafers and Crystal Substrates.
PAM XIAMEN provides both standard and customized high quality single crystals, wafers and substrates for a wide range of applications such as LED, ferroelectric, piezoelectric, electro-optical, photonics, high power electronics, and high frequency power devices, just to name a few. Customized crystal growth and precision machining services are available. Please contact us today to discuss your project requirements.
By working with PAM XIAMEN, you can get customized crystal substrates, single crystals, and wafers to meet your specific requirements. Even for customized crystal products, you will still appreciate the short lead time and favorable prices from PAM XIAMEN when compared to most other crystals suppliers. This is why research institutions and technology companies around the world have switched from other suppliers to PAM XIAMEN when they have needs for crystals, wafers and substrates.
Contact us today to order monolithic single crystals, wafers and crystal substrates that meet your technical specifications.
Nb:SrTiO3 Niobium doped Strontium Titanate Crystal and Substrates
Laser Diode Grade 2 in Ge-Doped N-type Gallium Nitride Single Crystal C plane (0001)
Laser Diode Grade 2 inch Fe-doped Semi-insulating Gallium Nitride Single Crystal C plane (0001)
5 x 10 mm A plane (11-20) Undoped N-type Free Standing Gallium Nitride Single Crystal
Gallium Phosphate GaP Crystal and Substrates
2 in N-Type Undoped GaN 20 um Gallium Nitride Template on Sapphire (0001)
AlGaN/GaN HEMT on 2 inch Semi-Insulating SiC Wafer (GaN/SiC)
AlGaN/GaN HEMT on 2 in Conductive SiC Wafer (GaN/SiC)
2″ MetaPurex Film on Silicon Wafer
3″ MetaPurex Film on Silicon Wafer
5 mm x 5 mm Monolayer Graphene Film on Cu Foil Substrate Pack of 4
2 in Si-Doped N-Type Gallium Nitride Single Crystal C-Plane
10 mm x 10 mm Si-Doped N-Type Gallium Nitride Single Crystal C-Plane
LED Grade 2 inch Si-doped N-type Gallium Nitride Single Crystal C plane (0001)
Monolayer Graphene on 6 in SiO2/Si Wafer
5 x 10 mm Non-Polar Undoped N-Type Gallium Nitride GaN Single Crystal
5 x 20 mm M plane (1-100) Undoped N-type Gallium Nitride GaN Single Crystal
Suspended Monolayer Graphene Film on TEM Grids – Pack 4 units
10 mm x 10 mm Suspended Monolayer Graphene Film on Cavities
1 in x 1 in Monolayer Graphene Film on SiO2/Si Substrate
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
Before 1990, we are stated owned condensed matter physics research center. In 1990, center launched Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN), now it is a leading manufacturer of compound semiconductor material in China.