Single-emitter LD Chip 1470nm @3W
PAM200914-LD-CHIP-1470nm
Brand: PAM-XIAMEN
Wavelength: 1470nm
Stripe width: 96um
Output Power: 3W
Cavity Length:2mm
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers SOS (silicon on Sapphire). Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.5 um thick, Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 0.6 um thick, Silicon-on-Sapphire (11-02, R Plane ), 100mm Dia x 0.46mm,2sp, Film: 1.0 [...]
Effects of mosaic structure on the physical properties of CdZnTe crystals Mosaic structure in CdZnTe crystals was identified by using scanning electron microscopy (SEM), then the effects of mosaic structure on the physical properties were studied by means of high resolution X-ray diffraction (HRXRD), I–V characterization, and [...]
Method for modulating the wafer bow of free-standing GaN substrates via inductively coupled plasma etching The bowing curvature of the free-standing GaN substrate significantly decreased almost linearly from 0.67 to 0.056 m−1 (i.e. the bowing radius increased from 1.5 to 17.8 m) with increase in [...]
PAM XIAMEN offers SrTiO3 STO Strontium Titanate Crystal Substrates. Main Parameters Crystal structure M6 Growth method Blaze method Unit cell constant a=3.905Å Melt [...]
PAM XIAMEN offers 6″FZ Prime Silicon Wafer-1 6″ Si wafer, Diameter 150mm, FZ Gas Dope, SSP, N(100), resistivity 2000-7000Ωcm PARAMETER SPECIFICATION GENERAL CHARACTERISTICS 1 Growth Method FZ Gas Dope 2 Crystal Orientation (100) 3 Conductivity Type n 4 Dopant Phosphorus 5 Nominal Edge Exclusion 6 mm ELECTRICAL CHARACTERISTICS 6 Resistivity 2000 – 7000 Ωcm 7 Life Time >1500 µsec CHEMICAL CHARACTERISTICS 8 Oxygen Concentrations < 2xE16 at/cm3 9 Carbon Concentrations < 2xE16 at/cm3 WAFER PREPARATION CHARACTERISTICS 10 Front Surface Condition Polished, [...]
GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies TECHNOLOGIES The competing technologies on the RF market will be briefly described. The given key figures are oriented to production processes and are no records that are in principle feasible in the technology. The MESFET (fig. [...]
