Single-emitter LD Chip 808nm @10W

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Single-emitter LD Chip 808nm @10W

Single-emitter LD Chip 808nm @10W

PAM200914-LD-CHIP-808nm

Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm

 

Operation Symbol Min. Typ. Max. Unit
Center wavelength λ — 808 — nm
Output powe P。 — 10.5 — w
Operation mode — — CW — —
Geometrical
Emitter width w — 190 — μm
Cavity length L — 4000 — μm
Chip width W — 500 — μm
Chip height H — 150 — μm
Electro Optical Data
Threshold curen Ith — 1.6 — A
Operating current Iop — 10 — A
Operating voltage Vop — 1.8 — V
Slope efficiency ηd=PJ(lop-Ith) — 1.2 — WIA
Total conversion efficiency η=Po/(lopxVop) — 58 — %
Slow axis divergence θn” — 10 — degrees
Fast axis divergence θ1 — 35 — degrees
Spectral width △λ — 3 — nm
Polarization — — TE — —

 

For more information, please contact us email at [email protected] and [email protected]

2019-05-09

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