Single-emitter LD Chip 808nm @10W
PAM200914-LD-CHIP-808nm
Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm
Operation | Symbol | Min. | Typ. | Max. | Unit |
Center wavelength | λ | — | 808 | — | nm |
Output powe | P。 | — | 10.5 | — | w |
Operation mode | — | — | CW | — | — |
Geometrical | |||||
Emitter width | w | — | 190 | — | μm |
Cavity length | L | — | 4000 | — | μm |
Chip width | W | — | 500 | — | μm |
Chip height | H | — | 150 | — | μm |
Electro Optical Data | |||||
Threshold curen | Ith | — | 1.6 | — | A |
Operating current | Iop | — | 10 | — | A |
Operating voltage | Vop | — | 1.8 | — | V |
Slope efficiency | ηd=PJ(lop-Ith) | — | 1.2 | — | WIA |
Total conversion efficiency | η=Po/(lopxVop) | — | 58 | — | % |
Slow axis divergence | θn” | — | 10 | — | degrees |
Fast axis divergence | θ1 | — | 35 | — | degrees |
Spectral width | △λ | — | 3 | — | nm |
Polarization | — | — | TE | — | — |
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com