Physicists reveal material for high-speed quantum internet
Electrical excitation causes a point defect in the crystal lattice of silicon carbide to emit single photons, which are of use to quantum cryptography. Credit: Elena Khavina, MIPT
Researchers from the Moscow Institute of Physics and Technology have rediscovered [...]
2018-07-25meta-author
XRD Rocking Curves-GaN Material-TEST REPORT
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity [...]
2018-08-14meta-author
GaAs pn diodes with heavily carbon-doped p-type GaAs grown by MOMBE were fabricated. The I-V and C-V characteristics were not significantly affected by the hole concentration of the p-GaAs although a lattice mismatch at the junction generates misfit dislocations. A good I-V characteristic with [...]
2019-01-14meta-author
Thermal-mechanical characteristics and outgassing efficiency of integrated in-plane outgassing channels (IPOCs) at Al2O3-intermediated InP (die)-to-Si (wafer) bonding interface is investigated. The IPOCs are introduced and investigated via both multi-physics simulation and experimental demonstration. Thermal stress simulation indicates that Al2O3 bonding layer efficiently mitigates the [...]
2020-03-09meta-author
Structure for InGaAs photodetectors
We offer the wafer structure InGaAs photodetectors as follows:
Material
X
Thickness (nm)
Dopant
Doping concentration
InP
1000
N (Sulfur)
3e16
In(x)GaAs
0.53
3000
U/D
5e14
InP
500
N (Sulfur)
3e16
Substrate
SI (Fe)
Source:PAM-XIAMEN
For more information, please visit our website:https://www.powerwaywafer.com/, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com.
Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices
We report the effect of p-type AlGaInN/GaN superlattices (SLs) as electron-blocking layers (EBLs) on the optical properties of vertical light-emitting diodes (VLEDs). Using p-AlGaInN/GaN SLs in VLEDs, we have achieved significant improvements in [...]
2013-04-24meta-author