Single-emitter LD Chip 808nm @10W

  • Home
  • News
  • Single-emitter LD Chip 808nm @10W

PAM XIAMEN offers Single-emitter LD Chip 808nm @10W.

Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-05-09

Share this post

Related Posts

SrTiO3 single crystal-1

PAM XIAMEN offers SrTiO3 single crystal. SrTiO3 single crystal provides a good lattice match to most of  materials with Perovskite structure.  It is an excellent substrate for epitaxial film of HTS and many oxide. It has been used widely for special optical windows and as high quality sputtering [...]

2019-05-14meta-author
2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns-2

PAM XIAMEN offers 2″ Prime Silicon Wafer Tnickness 675 +/- 20 microns. Wafers 2 inches in diameter of monocrystalline silicon with an insulating oxide. 2 inches in diameter The silicon substrate orientation<100> resistivity>10Ωcm The insulating thermal oxidation film thickness 300nm Polishing: one-sided for microelectronics [...]

2019-07-02meta-author
Test grade silicon wafers-8

PAM XIAMEN offers test grade silicon wafers Below is just a short list of the test grade silicon substrates! Inches Cust class Dopant Type Orientation PFL length PFL direction SFL Off orientation Resistivity Diameter Thickness Bow TTV Warp 6 SSP Boron P 100 57,5 ± 2,5 110 ± 0,20 0.0 ± 0.2 ° 1 – 10 Ohmcm 150.0 ± 0.2 mm 600 ± 5 µm 3 6 SSP Boron P 111 0,0 ± 0,0 110 ± 1 0.0 ± 0.2° 25 – [...]

2019-02-25meta-author
Undoped Gallium Arsenide(GaAs) Wafer

Undoped Gallium Arsenide(GaAs) Wafer PAM-XIAMEN offer undoped GaAs wafer as follows: No1.Undoped GaAs wafers,2”size Diameter:50.8 mm +/- 0.3 mm Orientation: (100)+/-0.1deg. Semi Insulating, Undoped US Semi Standard Flats Major Flat Length: 17+/-1mm Minor Flat Length: 7+/-1mm Thickness: 350+/-25um Resistivity: >1E7 Ohm*cm Mobility: >=4000 cm2/V*s CC: Not Specified EPD: <=5000 cm-2 1 Side Polished (Ra < 5Å), EPI [...]

2020-04-03meta-author
Silicon Ingots-1

PAM XIAMEN offers Silicon Ingots. Material Description FZ NTD 3″Ø ingot n-type Si:P[111] ±2°, Ro: 50-60 Ohmcm, MCC Lifetime>400μs, (2 ingots: 197mm, 277mm) SEMI FZ 8″Ø ingot n-type Si:P[100] ±2.0°, Ro: 163-174 Ohmcm, MCC Lifetime>14581μs, (1 ingot: 83mm) FZ 6″Ø ingot p-type Si:B[100] ±2.0°, Ro: 1-2 Ohmcm, MCC Lifetime>1777μs, FZ 6″Ø ingot p-type [...]

2019-03-08meta-author
PBTE SINGLE CRYSTAL, LEAD TELLURIDE CRYSTAL

PAM XIAMEN offers PbTe Single Crystal, Lead Telluride Crystal. Technical specifications: Melting point: 924°C (1,695 °F; 1,197 K) Lattice constant: a = 6.46 Angstroms Solubility in water: insoluble Band gap: 0.25 eV (0 K) 0.32 eV (300 K) Electron Mobility: 1600 cm2 V−1 s−1 (0 K) 6000 cm2 V−1 s−1 (300 K) Crystal structure: Halite (cubic) Available sizes: 10 x 10 x1 mm, 5x5x1 mm, 20 x 10x 1mm. Customization sizes and shape [...]

2019-03-14meta-author