Single-emitter LD Chip 808nm @10W

  • Home
  • News
  • Single-emitter LD Chip 808nm @10W

Single-emitter LD Chip 808nm @10W

Single-emitter LD Chip 808nm @10W

PAM200914-LD-CHIP-808nm

Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm

 

Operation Symbol Min. Typ. Max. Unit
Center wavelength λ — 808 — nm
Output powe P。 — 10.5 — w
Operation mode — — CW — —
Geometrical
Emitter width w — 190 — μm
Cavity length L — 4000 — μm
Chip width W — 500 — μm
Chip height H — 150 — μm
Electro Optical Data
Threshold curen Ith — 1.6 — A
Operating current Iop — 10 — A
Operating voltage Vop — 1.8 — V
Slope efficiency ηd=PJ(lop-Ith) — 1.2 — WIA
Total conversion efficiency η=Po/(lopxVop) — 58 — %
Slow axis divergence θn” — 10 — degrees
Fast axis divergence θ1 — 35 — degrees
Spectral width △λ — 3 — nm
Polarization — — TE — —

 

For more information, please contact us email at [email protected] and [email protected]

2019-05-09

Share this post

Related Posts

8″ Silicon Wafer-3

PAM XIAMEN offers8″ Silicon Wafer-3 Silicon Wafer P-Type Diameter 200.00±0.5 mm Thickness 725±50μm Dislocation density < 10-2 cm-2 Dopant – Boron Resistivity- 10-40 Ω.cm Notch SEMI STD Chamfer width 250-350μm Orientation – (100)±0.5 single sided polishing For more information, please visit our website: https://www.powerwaywafer.com, send us email at [email protected] and [email protected] With more than 25+years experiences in compound semiconductor material field and [...]

2019-09-20meta-author
GaN on Sapphire for Power

PAM XIAMEN offers GaN on Sapphire for Power. 1.1 GaN HEMT Structure on Sapphire for Power Application Wafer size 2”, 3”, 4”, 6” AlGaN/GaN HEMT structure Refer 1.2 Carrier density 6E12~2E13 cm2 Hall mobility / XRD(102)FWHM ~arc.sec XRD(002)FWHM ~arc.sec Sheet Resistivity / AFM RMS (nm）of 5x5um2 <0.25nm Bow(um) <=35um Edge exclusion  <2mm SiN passivation layer  0~30nm Al composition 20-30% In composition 17% for InAlN GaN cap / AlGaN/(In)AlN barrier / AlN interlayer / GaN channel / C [...]

2019-05-17meta-author
Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020

Bulk GaN cost to fall 60% to $730 for 2″ substrate by 2020 Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive [...]

2012-11-09meta-author
2″ Silicon Wafer-9

PAM XIAMEN offers 2″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [110] 2″ 250 P/E FZ ~50 PF<111> SF 134° n-type Si:P [110] 2″ 900 P/E FZ 50-100 1 F @ <111> only n-type Si:P [110] 2″ 280 P/P FZ 16-30 1 F @ <111> only n-type Si:P [110] 2″ 1000 P/P FZ 15-18 1 F @ <1,-1,0> n-type Si:P [100] 2″ 300 P/P FZ 1,000-1,600 SEMI Prime n-type Si:P [100] 2″ 300 P/P FZ 600-1,200 SEMI Prime, n-type Si:P [100] 2″ 2000 P/E FZ >600 SEMI Prime, , Individual cst n-type Si:P [100] 2″ 200 P/P FZ 500-1,500 SEMI Prime, n-type Si:P [100] 2″ 300 P/E FZ >300 SEMI Prime, n-type Si:P [100] 2″ 500 P/P FZ >200 SEMI Prime, n-type Si:P [100] 2″ 300 P/P FZ 50-110 SEMI Prime, n-type Si:P [100] 2″ 280 P/P FZ 20-70 SEMI Prime, n-type Si:P [100] 2″ 300 P/E FZ 10-40 SEMI Prime n-type [...]

2019-03-07meta-author
8″ Prime Silicon Wafer

PAM XIAMEN offers 8″ Prime Silicon Wafer. Silicon wafers, per SEMI Prime, P/E 8″(200.0±0.2mm) Ø×1,000±25µm, p-type Si:B[111]±0.5°, Ro: <100 Ohmcm, TTV<6µm, Bow<60µm, Warp<60µm, One-side-polished, Particles: ≤[email protected]≥0.3µm, Back-side etched, SEMI notch, Sealed in Empak or equivalent cassette. For more information, please visit our website: https://www.powerwaywafer.com, [...]

2019-07-02meta-author
TiO2（Rutile） substrates

PAM XIAMEN offers TiO2（Rutile） substrates. Rutile ( TiO2) single crystal is one of the most suitable materials used for spectral prisms and polarizing devices such as optical isolators and beam displacers because it has a large birefringence with a high refractive index. Compared to [...]

2019-05-20meta-author