Single-emitter LD Chip 808nm @10W

Single-emitter LD Chip 808nm @10W

PAM200914-LD-CHIP-808nm

Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm

 

Operation Symbol Min. Typ. Max. Unit
Center wavelength λ 808 nm
Output powe P。 10.5 w
Operation mode CW
Geometrical
Emitter width w 190 μm
Cavity length L 4000 μm
Chip width W 500 μm
Chip height H 150 μm
Electro Optical Data
Threshold curen Ith 1.6 A
Operating current Iop 10 A
Operating voltage Vop 1.8 V
Slope efficiency ηd=PJ(lop-Ith) 1.2 WIA
Total conversion efficiency η=Po/(lopxVop) 58 %
Slow axis divergence θn 10 degrees
Fast axis divergence θ1 35 degrees
Spectral width λ 3 nm
Polarization TE

 

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

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