Silicon carbide (SiC) is a compound semiconductor material composed of carbon and silicon elements, and is called wide-bandgap semiconductor material because the band gap is greater than 2.2eV. PAM-XIAMEN can provide N-type and semi-insulating SiC wafers. More specifications of SiC wafer please visit https://www.powerwaywafer.com/sic-wafer.
How SiC wafers [...]
2022-08-17meta-author
The hetero epitaxial materials used to make quantum cascade laser (QCL) are mainly InP based GaInAs/AlInAs material system, GaAs based GaAs/AlGaAs material system and antimonide material system. PAM-XIAMEN can provide InP based quantum cascade lasers thin film, as follows:
1. InGaAs/InAlAs/InP for Quantum Cascade Laser Diode
PAM210906 [...]
2023-07-21meta-author
PAM XIAMEN offers 3″ Silicon Wafer.
Diameter
Type
Dopant
Growth
method
Orientation
Resistivity
Thickness
Surface
Grade
76.2
N
Phos
CZ
-100
1-20
43768
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
40-60
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
80-100
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
140-160
P/P
PRIME
76.2
N
Phos
FZ
-100
>3000
300-350
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
300-350
P/P
PRIME
76.2
N
Phos
CZ
-100
1-20
300-350
P/E
PRIME
76.2
N
Phos
CZ
-100
350-400
P/E/OX
PRIME
76.2
N
As
CZ
-100
.001-.005
350-400
P/E
PRIME
76.2
N
Sb
CZ
-100
.005-.02
350-400
P/E
PRIME
76.2
N
Phos
FZ
-100
>3000
350-400
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/DTOx
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/Ni
PRIME
76.2
N
Phos
CZ
-100
1-20
350-400
P/E/WTOx
76.2
N
Phos
CZ
-100
20-50
350-400
P/P
PRIME
76.2
N
Phos
CZ
-100
20-50
350-400
P/P
PRIME
76.2
N
Phos
CZ
-100
20-50
400-450
P/E
PRIME
76.2
N
Phos
CZ
-100
450-500
P/P
PRIME
76.2
N
Phos
CZ
-100
500-550
P/E
PRIME
76.2
N
Phos
CZ
-100
950-1000
P/P
PRIME
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, [...]
2019-03-04meta-author
PAM XIAMEN offers 2″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
40mm
250
P/E
1-100
SEMI Prime, Soft cst
p-type Si:B
[100]
2″
280
P/P
1-5
SEMI Prime,
p-type Si:B
[100]
2″
280
P/P
1-5
SEMI Prime,
p-type Si:Ga
[100]
2″
350
P/P
1-5
SEMI Prime,
p-type Si:B
[100]
2″
525
P/P
1-30
SEMI,
p-type Si:B
[100]
2″
1000
P/P
1-10
SEMI Prime
p-type Si:B
[100]
2″
1000
P/E
1-10
SEMI Prime
p-type Si:B
[100]
2″
275
P/E
0.5-1.0
SEMI
p-type Si:B
[100]
2″
3150
C/C
>0.5
1Flat
p-type Si:B
[100]
2″
280
P/P
0.4-0.6
SEMI Prime,
p-type Si:B
[100]
2″
275
P/E
0.2-0.4
SEMI Prime,
p-type Si:B
[100]
2″
279
P/P
0.08-0.12
SEMI Prime
p-type Si:B
[100]
2″
300
P/E
0.016-0.017
Prime, NO Flats
p-type Si:B
[100]
2″
300
P/E
0.016-0.017
Prime, NO Flats
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
250
P/P
0.015-0.020
SEMI Prime
p-type Si:B
[100]
2″
280
P/P
0.015-0.020
Prime, NO Flats
p-type Si:B
[100]
2″
280
P/P
0.015-0.020
Prime, NO Flats
p-type Si:B
[100]
2″
3000
P/E
0.015-0.020
Groups of [...]
2019-03-07meta-author
Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation
Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans [...]
III-nitrides are mainly composed of InN-GaN-AlN and its alloys, of which InGaN is the most important and widely used. InGaN is unstable and easy to decompose at high temperature. The separated phase InN can form small clusters with three-dimensional quantum confinement, which strengthens the [...]
2023-02-16meta-author