Single-emitter LD Chip 808nm @10W

Single-emitter LD Chip 808nm @10W

PAM200914-LD-CHIP-808nm

Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm

Operation	Symbol	Min.	Typ.	Max.	Unit
Center wavelength	λ	—	808	—	nm
Output powe	P。	—	10.5	—	w
Operation mode	—	—	CW	—	—
Geometrical
Emitter width	w	—	190	—	μm
Cavity length	L	—	4000	—	μm
Chip width	W	—	500	—	μm
Chip height	H	—	150	—	μm
Electro Optical Data
Threshold curen	Ith	—	1.6	—	A
Operating current	Iop	—	10	—	A
Operating voltage	Vop	—	1.8	—	V
Slope efficiency	ηd=PJ(lop-Ith)	—	1.2	—	WIA
Total conversion efficiency	η=Po/(lopxVop)	—	58	—	%
Slow axis divergence	θn”	—	10	—	degrees
Fast axis divergence	θ1	—	35	—	degrees
Spectral width	△λ	—	3	—	nm
Polarization	—	—	TE	—	—

For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com

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Single-emitter LD Chip 808nm @10W

Single-emitter LD Chip 808nm @10W

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