Single-emitter LD Chip 808nm @10W

  • Home
  • News
  • Single-emitter LD Chip 808nm @10W

PAM XIAMEN offers Single-emitter LD Chip 808nm @10W.

Brand: PAM-XIAMEN
Wavelength: 808nm
Stripe width: 190um
Output Power: 10W
Cavity Length:4mm

For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com

Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer.

With more than 25+years experiences in compound semiconductor material field and export business, our team can assure you that we can understand your requirements and deal with your project professionally.

2019-05-09

Share this post

Related Posts

CsI Single crystal

PAM XIAMEN offers CsI Single crystal. CsI(Tl) is a traditional crystal used as a key material in modern science and technology. Its application can be found in various locations such as airport, railway station, customs, port as well as oil field and geographic exploration [...]

2019-04-19meta-author
Highly selective PEC etching of gallium nitride device structures

Highly selective PEC etching of gallium nitride device structures   Photoelectrochemical (PEC) wet etching is an attractive wet etch approach for III-Nitride materials. Compared to dry etch techniques normally applied in prevalent GaN device fabrications, PEC wet etching can provide low damage, selective etching and understanding [...]

2013-03-05meta-author
MgO single crystal substrate-2

PAM XIAMEN offers MgO single crystal substrate. MgO is an excellent single crystal substrate for thin films of Ferro magnetic, Photo-electronic and high Tc superconductor materials. PAM XIAMEN uses a special arc melting method to grow high purity MgO crystal in sizes up to [...]

2019-05-13meta-author
PAM-XIAMEN Offers Gallium nitride

Xiamen Powerway Advanced Material Co.,Ltd., a leading supplier of GaN and other related products and services announced the new availability of size 2”  is on mass production in 2017. This new product represents a natural addition to PAM-XIAMEN’s product line.   Dr. Shaka, said, “We are pleased to [...]

2017-11-15meta-author
Chloride-based SiC growth on a-axis 4H-SiC substrates

SiC has, during the last few years, become increasingly important as a power-device material for high voltage applications. The thick, low-doped voltage-supporting epitaxial layer is normally grown by CVD on 4° off-cut 4H-SiC substrates at a growth rate of View the MathML source using silane [...]

2015-08-27meta-author ,
Silicon Epi Wafers Sale

Silicon Epi Wafers Sale PAM XIAMEN offers Silicon Epi Wafers.       6″ Epitaxial Silicon Wafers Item Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm PAM3197 6″Øx675μm n- Si:P[100] 0.001-0.002 P/EOx 0.016 n- Si:P 0.32-0.46 n/n+ 4″ Epitaxial Silicon Wafers Item Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm PAM3198 4″Øx360μm n- Si:Sb[111] 0.005-0.020 P/E 20 n- Si:P 360 – 440 n/n+ PAM3199 4″Øx400μm p- Si:B[111] 0.01-0.10 P/E 6.5 p- Si:B 3.6±10% P/P/P+ 22±1.5 p- Si:B 300±50 PAM3200 4″Øx525μm p- Si:B[111] 0.01-0.02 P/E 8.1±1 p- Si:B 4.5±10% P/P/P+ 6.85±0.75 p- Si:B 0.75±0.15 PAM3201 4″Øx380μm p- Si:B[111] 0.008-0.020 P/EOx 10.5 p- Si:B 570±10% p/p+ PAM3202 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.15 ±10% P/P+ PAM3203 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 20 p- Si:B 0.25±10% P/P+ PAM3204 4″Øx525μm p- Si:B[111] 0.001-0.005 P/E 20 p- Si:B 175±10% P/P+ PAM3205 4″Øx440μm p- Si:B[111] 0.008-0.020 P/E 21 p- Si:B 150 [...]

2019-02-15meta-author