PAM XIAMEN offers Ceramic ALN SUBSTRATE.
100X100 Thickness 0.5±0.03mm
Item
Unit
Value
Test Standard
1）Colour
—-
Gray
3.2
2）Density
g/cm³
≥3.33
GB/T 2413
3）Thermal Conductivity
20℃，W/(m·K)
≥170
GB/T 5598
4）Dielectric Constant
1MHz
8~10
GB/T 5594.4
5）Dielectric Strength
KV/mm
≥17
GB/T 5593
6）Flexural Strength
MPa
≥450
GB/T 5593
7）Camber
Length‰
≤2‰
8）Surface roughness Ra
μm
0.3~0.6
GB/T 6062
9）Water absorption
%
0
GB/T 3299-1996
10)Volume resistivity
20℃，Ω.cm
≥1013
GB/T 5594.5
11）Thermal expansivity
10-6/℃
20~300℃
2~3
GB/T5593
300~800℃
2.5~3.5
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen [...]
2019-07-03meta-author
PAM XIAMEN offers Ultra-Thinned Silicon Wafers! We have them!
Free Standing Thin Silicon Wafers
We offer freestanding super thin silicon wafers with thicknesses ranging from 5µm to 100µm and with diameters from 5mm to 6. The thin Silicon wafers are true mirror finish DSP, good surface flatness, haze-free, [...]
2019-02-26meta-author
PAM XIAMEN offers 60+1mm FZ Si Ingot -3
FZ Si Ingot
Diameter 60+1mm, N-type, <111>±2°
Resistivity 1000-3000Ωcm
Oxygen/Carbon Content 10Е16см-3
The silicon content not less than 99.999999%
Length 150-480mm
MCC lifetime>1000μs
The dislocation density not, Swirl not
For more information, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
2020-03-18meta-author
GaAs mHEMT epi wafer
We can offer 4″GaAs mHEMT epi wafer(GaAs MBE epiwafer), please see below
typical structure:
N+ In0.53Ga0.47As 20nm (n=1×10^19 cm^-3)
N+ InP etch stopper 5nm (n=5×10^18 cm^-3)
i- In0.52Al0.48As Schottky barrier 10nm
Si-delta-doping (n=6×10^12 cm^-2)
i- In0.52Al0.48As spacer 4nm
i-In0.53Ga0.47As channel 15nm
In0.52Al0.48As buffer 300nm
metamorphic buffer 300nm (linearly graded from [...]
We are an expert of semiconductor wafers in semiconductor industry, and we offer technology support and wafers selling for thousands of univerisities and industrial customers by our decades experience, including Cornell University, Stanford Univeristy,Peking University, Shandong Univerity, university of south carolina,Caltech Faraon lab (USA）,University of California, Irvine (USA),Singapore MIT Alliance for Research and Technology Centre (SMART),West Virginia University,Purdue Univerity, University of California, Los Angeles,King Abdullah University of Science & Technology,Massachusetts Institute of Technology,University of Houston,University of Wisconsin,University of Science and Technology of China etc.
And now we show one article example as follows, who bought our wafers or service:
Article title:Role of Si in the Surface Damage Mechanism of RB-SiC/Si Under Mechanical Loading
Published by:
Quanli Zhang ; Zhen Zhang ; Honghua [...]
2019-12-02meta-author
Suppression Of Gate Leakage Current In GaN MOS Devices By Passivation With Photo-grown Ga2O3
We report the use of photo-enhanced chemical (PEC) technique to form high-quality metal oxide semiconductor (MOS) devices made of gallium oxide (Ga2O3)/gallium nitride (GaN). Gate leakage current density as low as [...]
2012-12-07meta-author
