PAM XIAMEN offers Si (Bare Prime, Thermal oxide ,Pt coated &Solar Cell Grade ).
PAM XIAMEN supplies all kinds of Silicon wafer from 1″ ~ 8″ in diameter. Particularly specializing in fabrication of Si wafer with various special size and orientation.
3″ Diameter Wafers [...]
2019-05-15meta-author
PAM-XIAMEN offers (11-22) Plane U-GaN Freestanding GaN Substrate
Item
PAM-FS-GAN(11-22)- U
Dimension
380+/-50um
Thickness
350 ±25 µm 430 ±25 µm
Orientation
(11-22) plane off angle toward A-axis 0 ±0.5°
(11-22) plane off angle toward C-axis -1 ±0.2°
Conduction Type
N-type / Undoped
Resistivity (300K)
< 0.1 Ω·cm
TTV
≤ 10 µm
BOW
BOW ≤ 10 µm
Surface Roughness
Front side: Ra<0.2nm, epi-ready;
Back side: Fine Ground or polished.
Dislocation Density
≤ 5 x 10 6cm-2
Macro Defect Density
0 cm-2
Useable Area
> 90% (edge exclusion)
Package
each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
2020-08-20meta-author
AlGaN template structure report
A test report is necessary to show the compliance between custom description and our final wafers data. We will test the wafer characerization by equipment before shipment, testing surface roughness by atomic force microscope, type by Roman spectra instrument, resistivity by [...]
2018-08-14meta-author
PAM XIAMEN offers test grade silicon wafers
Below is just a short list of the test grade silicon substrates!
Inches
Cust class
Dopant
Type
Orientation
PFL length
PFL direction
SFL
Off orientation
Resistivity
Diameter
Thickness
Bow
TTV
Warp
8
SSP
Arsenic
N+
100
0,0 ± 0,0
010 ± 1
0.0 ± 0.4°
0.002 – 0.003 Ohmcm
200 ± 0.1 mm
725 ± 15 µm
6
60
8
SSP
Boron
P
100
0,0 ± 0,0
011 ± 1
3.5 – 7.0 Ohmcm
200 ± [...]
2019-02-25meta-author
1470 / 1550nm High Power Laser Single Chip
PAM XIAMEN offers 1470 / 1550nm high power laser single chip as follows:
Option1:1.5w:
Item
Parameters
wavelength
1470/1550nm
power
1.5 W
Working current
4 A
Working voltage
1.4 V
Strip width
96 μm
size
1000*500*150 μm
Divergence angle
11/31 degrees
Photoelectric conversion efficiency
26%
Option2: 3w:
Item
Parameters
wavelength
1470/1550nm
power
3 W
Working current
9A
Working voltage
1.5V
Strip width
96 μm
size
2000*500*150 μm
Divergence angle
11/28 degrees
Photoelectric conversion [...]
2020-06-17meta-author
PAM XIAMEN offers 12″ Silicon Wafer.
Material
Orient.
Diam.
Thck
(μm)
Surf.
Resistivity
Ωcm
Comment
p-type Si:B
[100]
12″
750
P/E
MCZ 1-100
TEST grade, SEMI notch, TTV<25µm
p-type Si:B
[100]
12″
775
P/P
MCZ 1-100
Prime, SEMI notch, TTV<3µm
p-type Si:B
[100]
12″
775
P/E
MCZ 1-100
Prime, SEMI notch,TTV<10µm
p-type Si:B
[100]
12″
775
P/P
0.01-0.02
Prime, SEMI notch,TTV<4µm
For more information, please visit our website: https://www.powerwaywafer.com,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading [...]
2019-03-04meta-author