Single-emitter LD Chip 9xxnm @15W
PAM200914-LD-CHIP-976nm
Brand: PAM-XIAMEN
Wavelength: 9xxnm
Stripe width: 96um
Output Power: 15W
Cavity Length:4mm
For more information, please contact us email at victorchan@powerwaywafer.com and powerwaymaterial@gmail.com
PAM XIAMEN offers 6″ Silicon EPI Wafers. Substrate EPI Comment Size Type Res Ωcm Surf. Thick μm Type Res Ωcm 6″Øx675μm n- Si:P[100] 0.001-0.002 P/EOx 3.2 ±0.2 n- Si:P 0.32-0.46 n+/n++ For more information, please visit our website: https://www.powerwaywafer.com, send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com Found in 1990, Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semiconductor material in China.PAM-XIAMEN develops advanced crystal [...]
PAM XIAMEN offers Niobium( Nb) substrate ( Polycrystalline). Niobium( Nb) substrate ( Polycrystalline) , 10x10x0.5 mm, 1 side polished Niobium( Nb) substrate ( Polycrystalline) Purity: 99.5% Size: 10x10x0.5 mm Surface finish: One side optical polished Surface finish (RMS or Ra) : N/A General Properties [...]
PAM XIAMEN offers FZ Silicon Ignot Diameter 60+1mm. FZ Si Ingot Diameter 60+1mm, N-type, <111>±2° Resistivity 1000-3000Ωcm Oxygen/Carbon Content 10Е16см-3 The silicon content not less than 99.999999% Length 150-480mm MCC lifetime>1000μs The dislocation density not, Swirl not For more information, please visit our website: [...]
PAM XIAMEN offers Si wafer Thickness: 675 ± 25 um. Si wafer Method: Cz Orientation: <111> Type: P-Type Dopant: Boron Resistivity: 0.1-13 ohm.cm Diameter: 150 ± 0.1 mm Thickness: 675 ± 25 um Chamfer Front side: Epi-ready Back side: etched BOW < 30um Warp [...]
PAM XIAMEN offers high quality GaSb single crystal wafers. GaSb undoped GaSb Wafer (100), undoped, 10x10x0.5 mm ,1sp GaSb Wafer (100), undoped, 2″x0.45 mm ,1sp GaSb Wafer (100), undoped, 2″x0.5 mm two sides polished GaSb Wafer (111)-A, undoped,P-type 2″x0.4 mm ,2sp GaSb Wafer (111)-B, [...]
PAM XIAMEN offers 1″ Silicon Wafer. Material Orient. Diam. Thck (μm) Surf. Resistivity Ωcm Comment n-type Si:P [100] 1″ 475 ±10 E/E FZ >500 {1,900-2,400} n-type Si:P [111] ±0.5° 1″ 280 P/P FZ 2,000-10,000 TTV<5μm Intrinsic Si:- [100] 1″ 320 P/E FZ >20,000 Prime Intrinsic Si:- [100] 1″ 500 P/E FZ >20,000 SEMI Prime Intrinsic Si:- [100] 1″ 160 P/P FZ >10,000 Prime, TTV<8μm Intrinsic Si:- [100] 0.5″ 12700 C/C FZ >10,000 a set of 4 rods sealed in polyehtylene foil Intrinsic Si:- [111] ±0.5° 1″ 500 P/P FZ >15,000 SEMI Prime Intrinsic Si:- [111] ±0.5° 1″ 1000 P/E FZ 14,000-30,000 Cassettes of 7, 6, 6 wafers Intrinsic Si:- [111] ±2° 1″ 27870 C/C FZ >10,000 Single Crystal Silicon Rod, 0.39″ diameter × 27.87±0.1mm p-type [...]
